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PBY277

Description
Rectifier Diode
CategoryDiscrete semiconductor    diode   
File Size92KB,2 Pages
ManufacturerSEMIKRON
Websitehttp://www.semikron.com
Download Datasheet Parametric View All

PBY277 Overview

Rectifier Diode

PBY277 Parametric

Parameter NameAttribute value
MakerSEMIKRON
Reach Compliance Codecompli
1N 1199A ... 1N 1206A, 1N 3671, 1N 3673
PBY 271 ... PBY 277
Silicon-Power Rectifiers
Nominal current – Nennstrom
Silizium-Leistungs-Gleichrichter
12 A
50...1000 V
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
Metal case – Metallgehäuse
Weight approx. – Gewicht ca.
Recommended mounting torque
Empfohlenes Anzugsdrehmoment
DO-4
5.5 g
18 ± 10% lb.in.
2 ± 10% Nm
Dimensions / Maße in mm
Standard: Cathode to stud / am Gewinde
Index R:
Anode to stud / am Gewinde (e.g. 1N 1199 A/R)
Maximum ratings
Type
Typ
1N 1199 A
1N 1200 A
1N 1202 A
1N 1204 A
1N 1206 A
1N 3671
1N 3673
=
=
=
=
=
=
=
PBY 271
PBY 272
PBY 273
PBY 274
PBY 275
PBY 276
PBY 277
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
V
RRM
[V]
50
100
200
400
600
800
1000
T
C
= 100
/
C
Grenzwerte
Surge peak reverse voltage
Stoßspitzensperrspannung
V
RSM
[V]
60
120
240
480
720
1000
1200
Max. average forward rectified current, R-load
Dauergrenzstrom in Einwegschaltung mit R-Last
Repetitive peak forward current
Periodischer Spitzenstrom
Peak forward surge current, 50 Hz half sine-wave
Stoßstrom für eine 50 Hz Sinus-Halbwelle
Peak forward surge current, 60 Hz half sine-wave
Stoßstrom für eine 60 Hz Sinus-Halbwelle
Rating for fusing – Grenzlastintegral, t < 10 ms
I
FAV
12 A
1
)
f > 15 Hz
T
A
= 25
/
C
T
A
= 25
/
C
T
A
= 25
/
C
I
FRM
40 A
1
)
I
FSM
220 A
I
FSM
i
2
t
240 A
240 A
2
s
1
) Valid, if the temp. of the stud is kept to 100
/
C – Gültig, wenn die Temp. am Gewinde auf 100
/
C gehalten wird
01.04.2000
54

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