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UCLAMP0503C.WC

Description
Trans Voltage Suppressor Diode, 150W, 5V V(RWM), Unidirectional, 3 Element, Silicon, MO-211BA, 1 X 0.90 MM, 0.65 MM HEIGHT, CSP-4
CategoryDiscrete semiconductor    diode   
File Size173KB,8 Pages
ManufacturerSEMTECH
Websitehttp://www.semtech.com
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UCLAMP0503C.WC Overview

Trans Voltage Suppressor Diode, 150W, 5V V(RWM), Unidirectional, 3 Element, Silicon, MO-211BA, 1 X 0.90 MM, 0.65 MM HEIGHT, CSP-4

UCLAMP0503C.WC Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSEMTECH
Parts packaging codeDSBGA
package instructionS-PBGA-B4
Contacts4
Reach Compliance Codeunknow
ECCN codeEAR99
Minimum breakdown voltage6 V
Breakdown voltage nominal value6 V
Maximum clamping voltage11.5 V
ConfigurationCOMMON ANODE, 3 ELEMENTS
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 codeMO-211BA
JESD-30 codeS-PBGA-B4
JESD-609 codee0
Maximum non-repetitive peak reverse power dissipation150 W
Number of components3
Number of terminals4
Package body materialPLASTIC/EPOXY
Package shapeSQUARE
Package formGRID ARRAY
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Certification statusNot Qualified
Maximum repetitive peak reverse voltage5 V
surface mountYES
technologyAVALANCHE
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formBALL
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED

UCLAMP0503C.WC Preview

PROTECTION PRODUCTS - MicroClamp
TM
Description
The uClamp
TM
0503C is a three line flip chip Transient
Voltage Suppressor (TVS). MicroClamp’s are state-of-
the-art devices that utilize solid-state technology for
superior clamping performance and DC electrical
characteristics. These devices are designed to protect
sensitive semiconductor components from damage or
latch-up due to cable discharge events (CDE), electro-
static discharge (ESD) and other voltage induced
transient events.
The uClamp0503C is a 4-bump, 0.5mm pitch flip chip
array with a 2 x 2 bump grid. It measures approxi-
mately 1.0 x 0.9 x 0.65 mm. This small outline makes
these devices especially well suited for portable appli-
cations.
Each device will protect two bidirectional (signal swings
above and below ground) or three unidirectional (signal
above ground) lines. The flip chip design results in
lower inductance, virtually eliminating voltage over-
shoot due to leads and interconnecting bond wires.
They may be used to meet the ESD immunity require-
ments of IEC 61000-4-2, Level 4 (±15kV air, ±8kV
contact discharge).
The uClamp0503C is fabricated using Semtech’s
proprietary solid-state process technology. It is bidirec-
tional and may be used on lines where the signal
swings above and below ground. The uClamp0503C is
for use on lines operating up to 5.0 volts.
µClamp
ΤΜ
Three Line Flip Chip TVS
Features
150 Watts peak pulse power (tp = 8/20µs)
Transient protection for data lines to
IEC 61000-4-2 (ESD) ±15kV (air), ±8kV (contact)
IEC 61000-4-4 (EFT) 40A (5/50ns)
IEC 61000-4-5 (Lightning) 12A (8/20µs)
Small chip scale package requires less board space
Low profile (< 0.65mm)
No need for underfill material
Protects up to three data or I/O lines
Low clamping voltage
Working voltage: 5.0V
Solid-state technology
uClamp0503C
Mechanical Characteristics
JEDEC MO-211, Variation BA, 0.50 mm Pitch Flip
Chip Package
RoHS/WEEE Compliant
Marking : Marking Code + Orientation Mark
Non-conductive top side coating
Packaging : Tape and Reel
Applications
Cell Phone Handsets and Accessories
Personal Digital Assistants (PDA’s)
Notebook & Hand Held Computers
Portable Instrumentation
Pagers
Smart Cards
MP3 Players
Device Dimensions
Schematic & PIN Configuration
B1
B2
A1
A2
Maximum Dimensions (mm)
2 x 2 Grid Flip Chip TVS (Bump Up View)
Revision 10/05/05
1
www.semtech.com
uClamp0503C
PROTECTION PRODUCTS
Absolute Maximum Rating
R ating
Peak Pulse Power (tp = 8/20µs)
Maximum Peak Pulse Current (tp = 8/20µs)
ESD p er IEC 61000-4-2 (Air)
ESD p er IEC 61000-4-2 (Contact)
Op erating Temp erature
Storage Temp erature
Symbol
P
p k
I
p p
V
PP
T
J
T
STG
Value
150
13
+/- 20
+/- 15
-55 to +125
-55 to +150
PRELIMINARY
Units
Watts
Amps
kV
°C
°C
Electrical Characteristics (T=25
o
C)
Parameter
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage
Clamping Voltage
Clamping Voltage
Junction Capacitance
Junction Capacitance
Symbol
V
RWM
V
BR
I
R
V
C
V
C
V
C
C
j
C
j
I
t
= 1mA
V
RWM
= 5V, T=25°C
I
PP
= 5A, tp = 8/20µs
I/O to Ground
I
PP
= 13A, tp = 8/20µs
I/O to Ground
I
PP
= 13A, tp = 8/20µs
I/O to I/O
V
R
= 0V, f = 1MHz
I/O to Ground
V
R
= 0V, f = 1MHz
I/O toI/O
6
1
9.8
10
11.5
100
50
Conditions
Minimum
Typical
Maximum
5
Units
V
V
µA
V
V
V
pF
pF
2004 Semtech Corp.
2
www.semtech.com
uClamp0503C
PROTECTION PRODUCTS
Typical Characteristics
Non-Repetitive Peak Pulse Power vs. Pulse Time
10
110
100
90
80
70
60
50
40
30
20
10
0
PRELIMINARY
Power Derating Curve
Peak Pulse Power - P
PP
(kW)
1
0.1
0.01
0.1
1
10
Pulse Duration - tp ( s)
100
1000
% of Rated Power or
PP
I
0
25
50
75
100
o
125
150
Ambient Temperature - T
A
( C)
Clamping Voltage vs. Peak Pulse Current
12
I/O to I/O
Normalized Capacitance vs. Reverse Voltage
1
f = 1 MHz
0.9
Normalized Capacitance - Cj (pF)
14
Clamping Voltage - V
C
(V)
11
10
9
0.8
0.7
0.6
0.5
I/O to Ground
8
7
6
0
2
4
6
8
10
12
Waveform
Parameters:
tr = 8µs
td = 20µs
0.4
0.3
0.2
0.1
0
0
1
2
3
4
5
Peak Pulse Current - I
PP
(A)
Reverse Voltage - V
R
(Volts)
ESD Clamping (8kV Contact Discharge)
2004 Semtech Corp.
3
www.semtech.com
uClamp0503C
PROTECTION PRODUCTS
Applications Information
Device Connection Options
The uClamp0503C has solder bumps located in a 2 x 2
matrix layout on the active side of the device. The
bumps are designated as A1, A2, B1, and B2. The
lines to be protected are connected at bumps A1, B1,
and B2. Bump A2 is connected to ground. For protec-
tion of two bidirectional lines, connect one of the I/O
pins to ground and leave Bump A2 not connected. All
path lengths should be kept as short as possible to
minimize the effects of parasitic inductance in the
board traces.
Flip Chip TVS
Flip Chip TVS devices are wafer level chip scale pack-
ages. They eliminate external plastic packages and
leads and thus result in a significant board space
savings. Certain precautions and design consider-
ations have to be observed however for maximum
solder joint reliability. These include solder pad defini-
tion, board finish, and assembly parameters.
Printed Circuit Board Mounting
Non-solder mask defined (NSMD) land patterns are
recommended for mounting the flip chip TVS. Solder
mask defined (SMD) pads produce stress points near
the solder mask on the PCB side that can result in
solder joint cracking when exposed to extreme fatigue
conditions. The recommended pad size is 0.225 ±
0.010 mm with a solder mask opening of 0.350 ±
0.025 mm. The stencil should be laser cut and
electro-polished with a nominal thickness of 0.100mm.
Printed Circuit Board Finish
A uniform board finish is critical for good assembly
yield. Two finishes that provide uniform surface coat-
ings are immersion nickel gold and organic surface
protectant (OSP). A non-uniform finish such as hot air
solder leveling (HASL) can lead to mounting problems
and should be avoided.
Reflow Profile
The flip chip TVS can be assembled using the reflow
requirements for IPC/JEDEC standard J-STD-020B for
Sn-Pb eutectic assembly of small body components.
During reflow, the component will self-align itself on the
pad.
2004 Semtech Corp.
4
www.semtech.com
PRELIMINARY
Device Schematic & Pin Configuration
B1
B2
A1
A2
NSMD Package Footprint
(Dimensions in mm)
Stencil Design
uClamp0503C
PROTECTION PRODUCTS
Assembly Guideline for Pb-Free Soldering
The following are recommendations for the assembly
of this device:
Assembly Parameter
Solder Ball Composition
Solder Stencil Design
Solder Stencil Thickness
Solder Paste Composition
Solder Paste Type
Solder Reflow Profile
PCB Solder Pad Design
PCB Pad Finish
R ecommendation
95.5Sn/3.8Ag/0.7Cu
Same as the SnPb design
0.100 mm (0.004")
Sn Ag (3-4) Cu (0.5-0.9)
Type 4 size sphere or smaller
per JEDEC J-STD-020
Same as the SnPb Design
OSP or AuN i
PRELIMINARY
2004 Semtech Corp.
5
www.semtech.com

UCLAMP0503C.WC Related Products

UCLAMP0503C.WC UCLAMP0503C.WCT
Description Trans Voltage Suppressor Diode, 150W, 5V V(RWM), Unidirectional, 3 Element, Silicon, MO-211BA, 1 X 0.90 MM, 0.65 MM HEIGHT, CSP-4 Trans Voltage Suppressor Diode, 150W, 5V V(RWM), Unidirectional, 3 Element, Silicon, MO-211BA, 1 X 0.90 MM, 0.65 MM HEIGHT, ROHS COMPLIANT, CSP-4
Is it Rohs certified? incompatible conform to
Maker SEMTECH SEMTECH
Parts packaging code DSBGA DSBGA
package instruction S-PBGA-B4 1 X 0.90 MM, 0.65 MM HEIGHT, ROHS COMPLIANT, CSP-4
Contacts 4 4
Reach Compliance Code unknow unknown
ECCN code EAR99 EAR99
Minimum breakdown voltage 6 V 6 V
Breakdown voltage nominal value 6 V 6 V
Maximum clamping voltage 11.5 V 11.5 V
Configuration COMMON ANODE, 3 ELEMENTS COMMON ANODE, 3 ELEMENTS
Diode component materials SILICON SILICON
Diode type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 code MO-211BA MO-211BA
JESD-30 code S-PBGA-B4 S-PBGA-B4
JESD-609 code e0 e1
Maximum non-repetitive peak reverse power dissipation 150 W 150 W
Number of components 3 3
Number of terminals 4 4
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape SQUARE SQUARE
Package form GRID ARRAY GRID ARRAY
Peak Reflow Temperature (Celsius) NOT SPECIFIED 260
polarity UNIDIRECTIONAL UNIDIRECTIONAL
Certification status Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 5 V 5 V
surface mount YES YES
technology AVALANCHE AVALANCHE
Terminal surface Tin/Lead (Sn/Pb) TIN SILVER COPPER
Terminal form BALL BALL
Terminal location BOTTOM BOTTOM
Maximum time at peak reflow temperature NOT SPECIFIED 40
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