HY62SF16401A Series
256Kx16bit full CMOS SRAM
DESCRIPTION
The HY62SF16401A is a high speed, super low
power and 4Mbit full CMOS SRAM organized as
256K words by 16bits. The HY62SF16401A uses
high performance full CMOS process technology
and is designed for high speed and low power
circuit technology. It is particularly well-suited for
the high density low power system application.
This device has a data retention mode that
guarantees data to remain valid at a minimum
power supply voltage of 1.2V.
FEATURES
•
Fully static operation and Tri-state output
•
TTL compatible inputs and outputs
•
Battery backup
-. 1.2V(min) data retention
•
Standard pin configuration
-. 48-ball uBGA
Product No.
Voltage
(V)
Speed (ns)
Operation
Current/Icc(mA)
3
3
HY62SF16401A
1.7~2.3
85/100/120
HY62SF16401A-I 1.7~2.3
85/100/120
Note 1. Blank : Commercial, I : Industrial
2. Current value is max.
Standby
Current(uA)
LL
SL
10
2
10
2
Temperature
(°C)
0~70
-40~85(I)
PIN CONNECTION
1
A
B
C
D
E
F
G
H
/LB
IO9
BLOCK DIAGRAM
ROW
DECODER
SENSE AMP
2
/OE
3
A0
A3
4
A1
A4
A6
A7
A16
A15
A13
A10
5
A2
/CS1
IO2
IO4
IO5
IO6
6
CS2
A0
I/O1
1
/UB
IO1
COLUMN
DECODER
IO10 IO11 A5
Vss
Vcc
IO12 A17
IO13 NC
IO3
ADD INPUT
BUFFER
PRE DECODER
I/O8
DATA I/O
BUFFER
Vcc
Vss
IO7
A17
MEMORY ARRAY
256K x 16
WRITE DRIVER
I/O9
BLOCK
DECODER
IO15 IO14 A14
IO16 NC
NC
A8
A12
A9
/WE IO8
A11
NC
I/O16
uBGA
/CS1
CS2
/OE
/LB
/UB
/WE
PIN DESCRIPTION
Pin Name
/CS1, CS2
/WE
/OE
/LB
/UB
Pin Function
Chip Select
Write Enable
Output Enable
Lower Byte Control(I/O1~I/O8)
Upper Byte Control(I/O9~I/O16)
Pin Name
I/O1~I/O16
A0~A17
Vcc
Vss
NC
Pin Function
Data Inputs/Outputs
Address Inputs
Power(1.7~2.3)
Ground
No Connection
This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any
responsibility for use of circuits described. No patent licenses are implied.
Rev.07 / Jun.00
Hyundai Semiconductor
HY62SF16401A Series
ORDERING INFORMATION
Part No.
HY62SF16401ALLM
HY62SF16401ASLM
HY62SF16401ALLM-I
HY62SF16401ASLM-I
Speed
85/100/120
85/100/120
85/100/120
85/100/120
Power
LL-part
SL-part
LL-part
SL-part
Temp
.
Package
uBGA
uBGA
uBGA
uBGA
I
I
Note 1. Blank : Commercial, I : Industrial
ABSOLUTE MAXIMUM RATINGS (1)
Symbol
V
IN,
V
OUT
Vcc
T
A
T
STG
P
D
T
SOLDER
Parameter
Input/Output Voltage
Power Supply
Operating Temperature
Storage Temperature
Power Dissipation
Ball Soldering Temperature & Time
Rating
-0.3 to 2.6
-0.3 to 3.6
0 to 70
-40 to 85
-55 to 150
1.0
260
•
10
Unit
V
V
°C
°C
°C
W
°C•sec
Remark
HY62SF16401A
HY62SF16401A-I
Note
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent
damage to the device. This is stress rating only and the functional operation of the device under these or
any other conditions above those indicated in the operation of this specification is not implied.
Exposure to the absolute maximum rating conditions for extended period may affect reliability.
TRUTH TABLE
/CS1
H
X
X
L
L
L
CS2
X
L
X
H
H
H
/WE
X
X
X
H
H
H
/OE
X
X
X
H
H
L
/LB
X
X
H
L
X
L
H
L
L
H
L
/UB
X
X
H
X
L
H
L
L
H
L
L
Mode
Deselected
Deselected
Deselected
Output Disabled
Output Disabled
Read
I/O Pin
I/O1~I/O8
I/O9~I/O16
Hi-Z
Hi-Z
Hi-Z
Hi-Z
Hi-Z
Hi-Z
Hi-Z
Hi-Z
Hi-Z
Hi-Z
D
OUT
Hi-Z
Hi-Z
D
OUT
D
OUT
D
OUT
D
IN
Hi-Z
Hi-Z
D
IN
D
IN
D
IN
Power
Standby
Standby
Standby
Active
Active
Active
L
H
L
X
Write
Active
Note:
1. H=V
IH
, L=V
IL
, X=don't care (V
IL or
V
IH
)
2. /UB, /LB(Upper, Lower Byte enable)
These active LOW inputs allow individual bytes to be written or read.
When /LB is LOW, data is written or read to the lower byte, I/O 1 -I/O 8.
When /UB is LOW, data is written or read to the upper byte, I/O 9 -I/O 16.
Rev.07 / Jun.00
2
HY62SF16401A Series
RECOMMENDED DC OPERATING CONDITION
Symbol
Vcc
Vss
V
IH
V
IL
Parameter
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Min.
1.7
0
1.4
-0.3
1.
Typ
1.8
0
-
-
Max.
2.3
0
Vcc+0.3
0.4
Unit
V
V
V
V
Note : 1. Undershoot : VIL = -1.5V for pulse width less than 30ns
2. Undershoot is sampled, not 100% tested.
DC ELECTRICAL CHARACTERISTICS
T
A
= 0°C to 70°C / -40°C to 85°C (I)
Sym
Parameter
I
LI
Input Leakage Current
I
LO
Output Leakage Current
Test Condition
Vss < V
IN
< Vcc
Vss < V
OUT
< Vcc,
/CS1 = V
IH
or CS2=V
IL
or
/
OE
=
V
IH
or /WE = V
IL
or
/
UB
=
V
IH ,
/LB = V
IH
/CS1 = V
IL
, CS2=V
IH
,
V
IN
= V
IH
or V
IL,
I
I/O =
0mA
/CS1 = V
IL,
CS2 = V
IH
,
V
IN
= V
IH
or V
IL,
Cycle Time = Min,
100% Duty, I
I/O =
0mA
/CS1 < 0.2V
,
CS2 > Vcc-0.2V,
V
IN
< 0.2V or V
IN
> Vcc-0.2V
,
Cycle Time = 1us,
100% Duty, I
I/O =
0mA
/CS1 = V
IH
or CS2 = V
IL or
/UB, /LB = V
IH
/CS1 > Vcc - 0.2V or
SL
CS2 < Vss + 0.2V or
LL
/UB, /LB > Vcc - 0.2V
I
OL
= 0.1mA
I
OH =
-0.1mA
Min
-1
-1
Typ
-
-
1.
Max
1
1
Unit
uA
uA
Icc
I
CC1
Operating Power Supply Current
Average Operating Current
3
30
mA
mA
3
mA
I
SB
I
SB1
Standby Current
(TTL Input)
Standby Current
(CMOS Input)
0.3
0.5
0.5
-
1.6
-
-
2
10
0.2
-
mA
uA
uA
V
V
V
OL
V
OH
Output Low
Output High
Note
1. Typical values are at Vcc = 1.8V T
A
= 25°C
2. Typical values are not 100% tested
CAPACITANCE
(Temp = 25°C, f= 1.0MHz)
Symbol
Parameter
C
IN
Input Capacitance(Add, /CS1,CS2,/LB,/UB, /WE, /OE)
C
OUT
Output Capacitance(I/O)
Note : These parameters are sampled and not 100% tested
Condition
V
IN
= 0V
V
I/O
= 0V
Max.
8
10
Unit
pF
pF
Rev.07 / Jun.00
3
HY62SF16401A Series
AC CHARACTERISTICS
T
A
= 0°C to 70°C / -40°C to 85°C (I), unless otherwise specified
85ns
Parameter
# Symbol
Min.
Max.
READ CYCLE
1
tRC
Read Cycle Time
85
-
2
tAA
Address Access Time
-
85
3
tACS
Chip Select Access Time
-
85
4
tOE
Output Enable to Output Valid
-
40
5
tBA
/LB, /UB Access Time
-
85
6
tCLZ
Chip Select to Output in Low Z
10
-
7
tOLZ
Output Enable to Output in Low Z
5
-
8
tBLZ
/LB, /UB Enable to Output in Low Z
10
-
9
tCHZ
Chip Deselection to Output in High Z
0
30
10 tOHZ
Out Disable to Output in High Z
0
30
11 tBHZ
/LB, /UB Disable to Output in High Z
0
30
12 tOH
Output Hold from Address Change
10
-
WRITE CYCLE
13 tWC
Write Cycle Time
85
-
14 tCW
Chip Selection to End of Write
70
-
15 tAW
Address Valid to End of Write
70
-
16 tBW
/LB, /UB Valid to End of Write
70
-
17 tAS
Address Set-up Time
0
-
18 tWP
Write Pulse Width
60
-
19 tWR
Write Recovery Time
0
-
20 tWHZ
Write to Output in High Z
0
25
21 tDW
Data to Write Time Overlap
35
-
22 tDH
Data Hold from Write Time
0
-
23 tOW
Output Active from End of Write
5
-
100ns
Min.
Max.
100
-
-
-
-
20
5
20
0
0
0
15
100
80
80
80
0
70
0
0
40
0
10
-
100
100
50
100
-
-
-
30
30
30
-
-
-
-
-
-
-
-
30
-
-
-
120ns
Min
Max.
120
-
-
-
-
20
10
20
0
0
0
15
100
100
100
100
0
85
0
0
50
0
10
-
120
120
60
120
-
-
-
40
40
40
-
-
-
-
-
-
-
-
35
-
-
-
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
AC TEST CONDITIONS
T
A
= 0°C to 70°C / -40°C to 85°C (I), unless otherwise specified
Parameter
Value
Input Pulse Level
0.4V to 1.6V
Input Rise and Fall Time
5ns
Input and Output Timing Reference Level
0.9V
Output Load
CL = 30pF + 1TTL Load
AC TEST LOADS
V
TM
=1.8V
4091 Ohm
D
OUT
CL(1)
3273 Ohm
Note
1. Including jig and scope capacitance:
Rev.07 / Jun.00
4
HY62SF16401A Series
TIMING DIAGRAM
READ CYCLE 1(Note 1,4)
tRC
ADDR
tAA
tACS
/CS1
tOH
CS2
tCHZ
(3)
tBA
/UB ,/ LB
tOE
tOLZ
(3)
tBLZ
(3)
Data Valid
tBHZ
(3)
/OE
tOHZ
(3)
Data
Out
High-Z
tCLZ
(3)
READ CYCLE 2(Note 1,2,4)
tRC
ADDR
tAA
tOH
Data
Out
Previous Data
Data Valid
tOH
READ CYCLE 3(Note 1,2,4)
/CS1
/UB, /LB
CS2
tACS
tCLZ(3)
Data
Out
Data Valid
tCHZ(3)
Notes:
1. Read Cycle occurs whenever a high on the /WE and /OE is low, while /UB and/or /LB and /CS1 and
CS2 are in active status.
2. /OE = V
IL
3. Transition is measured + 200mV from steady state voltage.
This parameter is sampled and not 100% tested.
4. /CS1 in high for the standby, low for active
CS2 in low for the standby, high for active. /UB and /LB in high for the standby, low for active
Rev.07 / Jun.00
5
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