CYStech Electronics Corp.
N-Channel Logic Level Enhancement Mode Power MOSFET
Spec. No. : C098H8
Issued Date : 2016.04.18
Revised Date : 2016.04.27
Page No. : 1/10
MTA3D0N01H8
Features
•
Single Drive Requirement
•
Low On-resistance
•
Fast Switching Characteristic
•
Pb-free lead plating and halogen-free package
BV
DSS
I
D
@ T
C
=25°C, V
GS
=4.5V
I
D
@ T
A
=25°C, V
GS
=4.5V
V
GS
=10V, I
D
=20A
R
DSON(TYP)
V
GS
=4.5V, I
D
=20A
14V
44.5A
15.4A
2.9mΩ
3.7mΩ
V
GS
=2.5V, I
D
=20A 6.2mΩ
Equivalent Circuit
MTA3D0N01H8
Outline
DFN5×6
Pin 1
G：Gate
D：Drain S：Source
Ordering Information
Device
MTA3D0N01H8-0-T6-G
Package
DFN5×6
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTA3D0N01H8
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings
(Ta=25°C, unless otherwise specified)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ V
GS
=4.5V, T
C
=25°C
Continuous Drain Current @ V
GS
=4.5, T
C
=100°C
Continuous Drain Current @ V
GS
=10V, T
A
=25°C
Continuous Drain Current @ V
GS
=10V, T
A
=70°C
Pulsed Drain Current
Avalanche Current @ L=0.1mH
Avalanche Energy @ L=2mH, I
D
=15A, V
DD
=10V
T
C
=25℃
T
C
=100℃
Total Power Dissipation
T
A
=25℃
T
A
=70℃
Operating Junction and Storage Temperature Range
Symbol
V
DS
V
GS
I
D
I
DSM
I
DM
I
AS
E
AS
P
D
P
DSM
Tj, Tstg
Spec. No. : C098H8
Issued Date : 2016.04.18
Revised Date : 2016.04.27
Page No. : 2/10
Limits
14
±10
44.5
28.1
15.4
12.3
248
*1
40
225
*3
21
8.4
2.5
*2
1.6
*2
-55~+150
Unit
V
A
mJ
W
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
R
th,j-c
R
th,j-a
Value
6
50
*2
Unit
°C/W
Note : 1. Pulse width limited by maximum junction temperature.
2. Surface mounted on a 1 in² pad of 2oz copper, t≤10s. In practice R
th,j-a
will be determined by customer’s PCB characteristics.
3.100% tested by condition of L=0.1mH, I
AS
=20A, V
GS
=10V, V
DD
=10V.
Characteristics (T
C
=25°C, unless otherwise specified)
Symbol
Static
BV
DSS
V
GS(th)
G
FS
*1
I
GSS
I
DSS
R
DS(ON)
*1
Min.
14
0.3
-
-
-
-
-
-
-
-
-
-
10
-
-
Typ.
-
-
40
-
-
-
2.9
3.7
6.2
1130
433
255
14
1.3
6.3
Max.
-
1.3
-
±
100
1
5
3.8
5.3
9.3
-
-
-
18.6
-
-
Unit
V
S
nA
μA
m
Ω
Test Conditions
V
GS
=0V, I
D
=250μA
V
DS
= V
GS
, I
D
=250μA
V
DS
=5V, I
D
=20A
V
GS
=
±
10V
V
DS
=12V, V
GS
=0V
V
DS
=12V, V
GS
=0V, Tj=55°C
V
GS
=10V, I
D
=20A
V
GS
=4.5V, I
D
=20A
V
GS
=2.5V, I
D
=20A
V
DS
=10V, V
GS
=0V, f=1MHz
Dynamic
Ciss
Coss
Crss
Qg
*1, 2
Qgs
*1, 2
Qgd
*1, 2
MTA3D0N01H8
pF
nC
V
DS
=10V, V
GS
=4.5V, I
D
=20A
CYStek Product Specification
CYStech Electronics Corp.
Characteristics (T
C
=25°C, unless otherwise specified)
Symbol
t
d(ON)
*1, 2
tr
*1, 2
t
d(OFF)
*1, 2
t
f
*1, 2
Rg
Source-Drain Diode
I
S
*1
V
SD
*1
trr
Qrr
Min.
-
-
-
-
1.3
-
-
-
-
Typ.
12.4
22.2
39.4
23.6
2.7
-
0.83
17
4.6
Max.
18.6
33.3
59.1
35.4
4
20
1.2
-
-
Unit
ns
Ω
A
Spec. No. : C098H8
Issued Date : 2016.04.18
Revised Date : 2016.04.27
Page No. : 3/10
Test Conditions
V
DS
=10V, I
D
=20A, V
GS
=4.5V,
R
GS
=2.7Ω
f=1MHz
V
ns
nC
I
S
=20A, V
GS
=0V
I
F
=20A, dI
F
/dt=100A/μs
Note : *1.Pulse Test : Pulse Width
≤300μs,
Duty Cycle≤2%
*2.Independent of operating temperature
MTA3D0N01H8
CYStek Product Specification
CYStech Electronics Corp.
Recommended Soldering Footprint & Stencil Design
Spec. No. : C098H8
Issued Date : 2016.04.18
Revised Date : 2016.04.27
Page No. : 4/10
unit : mm
MTA3D0N01H8
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics
Typical Output Characteristics
200
180
I
D
, Drain Current(A)
160
140
120
100
80
60
40
20
0
0
2
4
6
8
V
DS
, Drain-Source Voltage(V)
10
2V
V
GS
=1.5V
3V
2.5V
4V
BV
DSS
, Normalized Drain-Source
Breakdown Voltage
Spec. No. : C098H8
Issued Date : 2016.04.18
Revised Date : 2016.04.27
Page No. : 5/10
Brekdown Voltage vs Ambient Temperature
1.4
10V
,
9V,8V,7V,6V,5V
1.2
1
0.8
I
D
=250
μ
A,
V
GS
=0V
0.6
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1.2
10
R
DS(ON)
, Static Drain-Source On-State
Resistance(mΩ)
V
GS
=2.5V
V
GS
=3V
V
SD
, Source-Drain Voltage(V)
1
Tj=25°C
0.8
0.6
Tj=150°C
0.4
0.2
V
GS
=10V
V
GS
=4.5V
1
0.1
1
10
I
D
, Drain Current(A)
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
100
0
2
4
6
8 10 12 14 16
I
DR
, Reverse Drain Current(A)
18
20
Drain-Source On-State Resistance vs Junction Tempearture
100
R
DS(ON)
, Static Drain-Source On-
State Resistance(mΩ)
90
80
70
60
50
40
30
20
10
0
0
2
4
6
8
V
GS
, Gate-Source Voltage(V)
10
2.4
R
DS(ON)
, Normalized Static Drain-
Source On-State Resistance
I
D
=20A
2
1.6
1.2
0.8
0.4
0
V
GS
=10V, I
D
=20A
R
DSON
@Tj=25°C : 2.9mΩ typ.
V
GS
=4.5V, I
D
=20A
R
DSON
@Tj=25°C : 3.7mΩ typ.
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTA3D0N01H8
CYStek Product Specification
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