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Z1160C

Description
Zener Diode, 160V V(Z), 2%, 1W,
CategoryDiscrete semiconductor    diode   
File Size162KB,2 Pages
ManufacturerSynSemi
Websitehttp://www.synsemi.com/
Download Datasheet Parametric View All

Z1160C Overview

Zener Diode, 160V V(Z), 2%, 1W,

Z1160C Parametric

Parameter NameAttribute value
MakerSynSemi
Reach Compliance Codeunknow
ECCN codeEAR99
ConfigurationSINGLE
Diode typeZENER DIODE
Maximum dynamic impedance1100 Ω
Number of components1
Maximum operating temperature175 °C
Maximum power dissipation1 W
Nominal reference voltage160 V
surface mountNO
Maximum voltage tolerance2%
Working test current1.6 mA
1N4728 - 1N4764
Z1110 - Z1200
V
Z
: 3.3 - 200 Volts
P
D
: 1 Watt
FEATURES :
*
*
*
*
Complete voltage range 3.3 to 200 Volts
High peak reverse power dissipation
High reliability
Low leakage current
SILICON ZENER DIODES
DO - 41
0.107 (2.7)
0.080 (2.0)
1.00 (25.4)
MIN.
0.205 (5.2)
0.166 (4.2)
MECHANICAL DATA
* Case : DO-41 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.339 gram
0.034 (0.86)
0.028 (0.71)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS
Rating at 25 °C ambient temperature unless otherwise specified
Rating
DC Power Dissipation at T
L
= 50 C (Note1)
Maximum Forward Voltage at I
F
= 200 mA
Maximum Thermal Resistance Junction to Ambient Air (Note2)
Junction Temperature Range
Storage Temperature Range
Symbol
P
D
V
F
RθJA
T
J
Ts
Value
1.0
1.2
170
- 55 to + 175
- 55 to + 175
Unit
Watt
Volts
K/W
C
C
Note :
(1) T
L
= Lead temperature at 3/8 " (9.5mm) from body
(2) Valid provided that leads are kept at ambient temperature at a distance of 10 mm from case.
P
D
, MAXIMUM DISSIPATION
(WATTS)
Fig. 1 POWER TEMPERATURE DERATING CURVE
1.25
L = 3/8" (9.5mm)
1.00
0.75
0.50
0.25
0
25
50
75
100
125
150
T
L,
LEAD TEMPERATURE ( C)
175
Page 1 of 2
Rev. 02 : January 10, 2004
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