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BZY55C13-C0RBG

Description
Zener Diode
CategoryDiscrete semiconductor    diode   
File Size236KB,5 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
Download Datasheet Parametric View All

BZY55C13-C0RBG Overview

Zener Diode

BZY55C13-C0RBG Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTaiwan Semiconductor
Reach Compliance Codecompli
ECCN codeEAR99
Diode typeZENER DIODE
JESD-609 codee3
Humidity sensitivity level1
Peak Reflow Temperature (Celsius)260
Terminal surfaceMatte Tin (Sn) - with Nickel (Ni) barrie
Maximum time at peak reflow temperature30
BZY55C2V4 thru BZY55C36
Taiwan Semiconductor
Small Signal Product
5% Tolerance SMD Zener Diode
FEATURES
- Wide zener voltage range selection: 2.4V to 36V
- Surface device type mounting
- Moisture sensitivity level 1
- Matte Tin(Sn) lead finish with Nickel(Ni) underplate
- Pb free and RoHS compliant
- Halogen free
0805
MECHANICAL DATA
- Case: 0805
- High temperature soldering guaranteed: 260
o
C/10s
- Polarity: Indicated by cathode band
- Weight : 0.006 grams (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Power Dissipation
Forward Voltage
I
F
= 10 mA
(Note 1)
Thermal Resistance (Junction to Ambient)
Junction and Storage Temperature Range
SYMBO
P
D
V
F
R
θJA
T
J
, T
STG
VALUE
500
1.5
300
- 55 to +150
o
UNIT
mW
V
C/W
o
C
Note 1: Valid provided that electrodes are kept at ambient temperature
Zener I vs. V Characteristics
V
BR
I
ZK
Z
ZK
I
ZT
V
Z
Z
ZT
I
ZM
V
ZM
: Voltage at I
ZK
: Test current for voltage V
BR
: Dynamic impedance at I
ZK
: Test current for voltage V
Z
: Voltage at current I
ZT
: Dynamic impedance at I
ZT
: Maximum steady state current
: Voltage at I
ZM
Document Number: DS_S1408017
Version: C14
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