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HS2JAF4

Description
Rectifier Diode, 1 Phase, 1 Element, 1.5A, 600V V(RRM), Silicon, DO-214AC, SMA, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size371KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
Download Datasheet Parametric View All

HS2JAF4 Overview

Rectifier Diode, 1 Phase, 1 Element, 1.5A, 600V V(RRM), Silicon, DO-214AC, SMA, 2 PIN

HS2JAF4 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTaiwan Semiconductor
package instructionR-PDSO-C2
Reach Compliance Codecompli
ECCN codeEAR99
applicationEFFICIENCY
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.7 V
JEDEC-95 codeDO-214AC
JESD-30 codeR-PDSO-C2
Maximum non-repetitive peak forward current50 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current1.5 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Maximum repetitive peak reverse voltage600 V
Maximum reverse current5 µA
Maximum reverse recovery time0.075 µs
surface mountYES
Terminal formC BEND
Terminal locationDUAL
HS2AA thru HS2MA
Taiwan Semiconductor
CREAT BY ART
High Efficient Surface Mount Rectifiers
FEATURES
- Glass passivated junction chip
- Ideal for automated placement
- Low profile package
- Fast switching for high efficiency
- Moisture sensitivity level: level 1, per J-STD-020
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case:
DO-214AC (SMA)
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - Green compound (halogen-free)
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Polarity:
Indicated by cathode band
Weight:
0.06 g (approximately)
DO-214AC(SMA)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage (Note 1)
@ 1.5 A
Maximum reverse current @ rated VR
T
J
=25
T
J
=125
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
Trr
Cj
R
θJA
T
J
T
STG
50
50
80
- 55 to +150
- 55 to +150
1.0
5
100
75
30
O
HS
2AA
50
35
50
HS
2BA
100
70
100
HS
2DA
200
140
200
HS
2FA
300
210
300
1.5
50
HS
2GA
400
280
400
HS
2JA
600
420
600
HS
800
560
800
HS
1000
700
1000
2KA 2MA
UNIT
V
V
V
A
A
1.3
1.7
V
μA
ns
pF
C/W
O
O
Maximum reverse recovery time (Note 2)
Typical junction capacitance (Note 3)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
Note 2: Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
C
C
Document Number: DS_D1405053
Version: H14

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