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HS2JAM2G

Description
Rectifier Diode, 1 Phase, 1 Element, 1.5A, 600V V(RRM), Silicon, DO-214AC, SMA, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size368KB,3 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
Download Datasheet Parametric View All

HS2JAM2G Overview

Rectifier Diode, 1 Phase, 1 Element, 1.5A, 600V V(RRM), Silicon, DO-214AC, SMA, 2 PIN

HS2JAM2G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTaiwan Semiconductor
package instructionSMA, 2 PIN
Reach Compliance Codecompli
ECCN codeEAR99
applicationEFFICIENCY
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.7 V
JEDEC-95 codeDO-214AC
JESD-30 codeR-PDSO-C2
Maximum non-repetitive peak forward current50 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current1.5 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Maximum repetitive peak reverse voltage600 V
Maximum reverse current5 µA
Maximum reverse recovery time0.075 µs
surface mountYES
Terminal formC BEND
Terminal locationDUAL
HS2AA thru HS2MA
Taiwan Semiconductor
CREAT BY ART
FEATURES
- Glass passivated junction chip
- Ideal for automated placement
- Low profile package
- Fast switching for high efficiency
- Moisture sensitivity level: level 1, per J-STD-020
- AEC-Q101 qualified (Green compound not involved)
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
High Efficient Surface Mount Rectifiers
MECHANICAL DATA
Case:DO-214AC(SMA)
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free, RoHS compliant
Terminal:Matte
tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Polarity:Indicated
by cathode band
Weight:0.06
gram (approximately)
DO-214AC(SMA)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERSTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage (Note 1)
@ 1.5 A
Maximum reverse current @ rated VR
T
J
=25
T
J
=125
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
Trr
Cj
R
θJA
T
J
T
STG
50
50
80
- 55 to + 150
- 55 to + 150
1.0
5
100
75
30
O
HS
2AA
50
35
50
HS
2BA
100
70
100
HS
2DA
200
140
200
HS
2FA
300
210
300
1.5
50
HS
2GA
400
280
400
HS
2JA
600
420
600
HS
2KA
800
560
800
HS
2MA
1000
700
1000
UNIT
V
V
V
A
A
1.3
1.7
V
uA
nS
pF
C/W
O
O
Maximum reverse recovery time (Note 2)
Typical junction capacitance (Note 3)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1:Pulse test with PW=300u sec, 1% duty cycle
Note 2: Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
C
C
Document Number:DS_D1310030
Version:H13
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