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SR1202A0

Description
Rectifier Diode, Schottky, 1 Phase, 1 Element, 12A, 20V V(RRM), Silicon, DO-201AD,
CategoryDiscrete semiconductor    diode   
File Size195KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
Download Datasheet Parametric View All

SR1202A0 Overview

Rectifier Diode, Schottky, 1 Phase, 1 Element, 12A, 20V V(RRM), Silicon, DO-201AD,

SR1202A0 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTaiwan Semiconductor
package instructionO-PALF-W2
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresLOW POWER LOSS
applicationEFFICIENCY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.55 V
JEDEC-95 codeDO-201AD
JESD-30 codeO-PALF-W2
Maximum non-repetitive peak forward current320 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-50 °C
Maximum output current12 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Maximum repetitive peak reverse voltage20 V
Maximum reverse current500 µA
surface mountNO
technologySCHOTTKY
Terminal formWIRE
Terminal locationAXIAL
SR1202 thru SR1204
Taiwan Semiconductor
CREAT BY ART
FEATURES
- Low forward voltage drop
- Low power loss, high efficiency
- Guardring for overvoltage protection
- High surge current capability
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
Schottky Barrier Rectifier
MECHANICAL DATA
Case:
DO-201AD
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test,
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Weight:
1.1 g (approximately)
DO-201AD
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Repetitive peak forward current f > 15Hz
Peak forward surge current, 50/60 Hz single half
sine-wave superimposed on rated load (JEDEC
Method )
Rating for fusing
t < 10ms
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FRM
I
FSM
I
2
t
V
F
I
R
R
θJL
R
θJA
T
J
T
STG
SR1202
20
14
20
SR1203
30
21
30
12
55
280 / 320
390
0.45
0.55
500
20
3
24
- 50 to + 150
<=200
- 55 to + 175
O
SR1204
40
28
40
UNIT
V
V
V
A
A
A
A
2
s
V
μA
mA
O
Maximum instantaneous forward voltage @5 A
(Note 1)
@12 A
Maximum DC reverse current
at rated DC blocking voltage
Typical thermal resistance
Junction temperature range
- in DC forward mode
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
@T
J
=25
@T
J
=100
C/W
O
C
C
Document Number: DS_D1308044
Version: F13

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