EEPROM, 512X8, 450ns, Parallel, CMOS, CDIP24,
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | Atmel (Microchip) |
| package instruction | DIP, DIP24,.6 |
| Reach Compliance Code | compli |
| Maximum access time | 450 ns |
| command user interface | NO |
| Data polling | YES |
| Durability | 10000 Write/Erase Cycles |
| JESD-30 code | R-XDIP-T24 |
| JESD-609 code | e0 |
| memory density | 4096 bi |
| Memory IC Type | EEPROM |
| memory width | 8 |
| Number of terminals | 24 |
| word count | 512 words |
| character code | 512 |
| Maximum operating temperature | 125 °C |
| Minimum operating temperature | -55 °C |
| organize | 512X8 |
| Package body material | CERAMIC |
| encapsulated code | DIP |
| Encapsulate equivalent code | DIP24,.6 |
| Package shape | RECTANGULAR |
| Package form | IN-LINE |
| Parallel/Serial | PARALLEL |
| power supply | 5 V |
| Certification status | Not Qualified |
| Maximum standby current | 0.003 A |
| Maximum slew rate | 0.045 mA |
| Nominal supply voltage (Vsup) | 5 V |
| surface mount | NO |
| technology | CMOS |
| Temperature level | MILITARY |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE |
| Terminal pitch | 2.54 mm |
| Terminal location | DUAL |
| switch bit | NO |
| Maximum write cycle time (tWC) | 1 ms |
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