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3N170

Description
30mA, 25V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-72
CategoryDiscrete semiconductor    The transistor   
File Size75KB,2 Pages
ManufacturerTexas Instruments
Websitehttp://www.ti.com.cn/
Stay tuned Parametric Compare

3N170 Overview

30mA, 25V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-72

3N170 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerTexas Instruments
package instructionCYLINDRICAL, O-MBCY-W4
Reach Compliance Code_compli
ECCN codeEAR99
Shell connectionSUBSTRATE
ConfigurationSINGLE
Minimum drain-source breakdown voltage25 V
Maximum drain current (Abs) (ID)0.03 A
Maximum drain current (ID)0.03 A
Maximum drain-source on-resistance200 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)1.3 pF
JEDEC-95 codeTO-72
JESD-30 codeO-MBCY-W4
Number of components1
Number of terminals4
Operating modeENHANCEMENT MODE
Maximum operating temperature200 °C
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)0.8 W
Certification statusNot Qualified
surface mountNO
Terminal formWIRE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsCHOPPER
Transistor component materialsSILICON

3N170 Related Products

3N170 3N169
Description 30mA, 25V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-72 30mA, 25V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-72
Is it Rohs certified? incompatible incompatible
package instruction CYLINDRICAL, O-MBCY-W4 CYLINDRICAL, O-MBCY-W4
Reach Compliance Code _compli not_compliant
ECCN code EAR99 EAR99
Shell connection SUBSTRATE SUBSTRATE
Configuration SINGLE SINGLE
Minimum drain-source breakdown voltage 25 V 25 V
Maximum drain current (Abs) (ID) 0.03 A 0.03 A
Maximum drain current (ID) 0.03 A 0.03 A
Maximum drain-source on-resistance 200 Ω 200 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss) 1.3 pF 1.3 pF
JEDEC-95 code TO-72 TO-72
JESD-30 code O-MBCY-W4 O-MBCY-W4
Number of components 1 1
Number of terminals 4 4
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 200 °C 200 °C
Package body material METAL METAL
Package shape ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 0.8 W 0.8 W
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal form WIRE WIRE
Terminal location BOTTOM BOTTOM
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications CHOPPER CHOPPER
Transistor component materials SILICON SILICON

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