|
3N170 |
3N169 |
| Description |
30mA, 25V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-72 |
30mA, 25V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-72 |
| Is it Rohs certified? |
incompatible |
incompatible |
| package instruction |
CYLINDRICAL, O-MBCY-W4 |
CYLINDRICAL, O-MBCY-W4 |
| Reach Compliance Code |
_compli |
not_compliant |
| ECCN code |
EAR99 |
EAR99 |
| Shell connection |
SUBSTRATE |
SUBSTRATE |
| Configuration |
SINGLE |
SINGLE |
| Minimum drain-source breakdown voltage |
25 V |
25 V |
| Maximum drain current (Abs) (ID) |
0.03 A |
0.03 A |
| Maximum drain current (ID) |
0.03 A |
0.03 A |
| Maximum drain-source on-resistance |
200 Ω |
200 Ω |
| FET technology |
METAL-OXIDE SEMICONDUCTOR |
METAL-OXIDE SEMICONDUCTOR |
| Maximum feedback capacitance (Crss) |
1.3 pF |
1.3 pF |
| JEDEC-95 code |
TO-72 |
TO-72 |
| JESD-30 code |
O-MBCY-W4 |
O-MBCY-W4 |
| Number of components |
1 |
1 |
| Number of terminals |
4 |
4 |
| Operating mode |
ENHANCEMENT MODE |
ENHANCEMENT MODE |
| Maximum operating temperature |
200 °C |
200 °C |
| Package body material |
METAL |
METAL |
| Package shape |
ROUND |
ROUND |
| Package form |
CYLINDRICAL |
CYLINDRICAL |
| Peak Reflow Temperature (Celsius) |
NOT SPECIFIED |
NOT SPECIFIED |
| Polarity/channel type |
N-CHANNEL |
N-CHANNEL |
| Maximum power dissipation(Abs) |
0.8 W |
0.8 W |
| Certification status |
Not Qualified |
Not Qualified |
| surface mount |
NO |
NO |
| Terminal form |
WIRE |
WIRE |
| Terminal location |
BOTTOM |
BOTTOM |
| Maximum time at peak reflow temperature |
NOT SPECIFIED |
NOT SPECIFIED |
| transistor applications |
CHOPPER |
CHOPPER |
| Transistor component materials |
SILICON |
SILICON |