NDS9938 datasheet, PDF - EEWORLD Datasheet

NDS9938: Description5A, 30V, 0.05ohm, 2 CHANNEL,N AND P-CHANNEL, Si, POWER, MOSFET; CategoryDiscrete semiconductor The transistor; File Size65KB，3 Pages; ManufacturerTexas Instruments; Websitehttp://www.ti.com.cn/

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NDS9938 Overview

5A, 30V, 0.05ohm, 2 CHANNEL,N AND P-CHANNEL, Si, POWER, MOSFET

Parameter Name	Attribute value
Maker	Texas Instruments
package instruction	SMALL OUTLINE, R-PDSO-G8
Reach Compliance Code	unknow
ECCN code	EAR99
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V
Maximum drain current (ID)	5 A
Maximum drain-source on-resistance	0.05 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-G8
Number of components	2
Number of terminals	8
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	N-CHANNEL AND P-CHANNEL
Maximum pulsed drain current (IDM)	10 A
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Maximum off time (toff)	100 ns
Maximum opening time (tons)	55 ns

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