TLP700
TOSHIBA Photocoupler
GaAℓAs IRED + Photo IC
TLP700
Industrial inverters
Inverter for air conditioners
IGBT/Power MOSFET gate drive
TLP700 consists of a GaAℓAs light-emitting diode and an integrated
photodetector.
This unit is 6-lead SDIP package. The TLP700 is 50% smaller than the 8-pin
DIP and meets the reinforced insulation class requirements of international safety
standards. Therefore the mounting area can be reduced in equipment requiring
safety standard certification.
The TLP700 is suitable for gate driving circuits for IGBTs or power MOSFETs.
In particular, the TLP700 is capable of “direct” gate driving of low-power IGBTs.
•
•
•
•
•
•
•
•
•
Peak output current:
Supply current:
Power supply voltage:
Threshold input current:
Switching time (t
p
LH
/ t
p
HL
):
Common mode transient immunity:
Isolation voltage:
Construction mechanical rating
7.62-mm pitch
standard type
Creepage Distance
Clearance
Insulation Thickness
7.0 mm (min)
7.0 mm (min)
0.4 mm (min)
10.16-mm pitch
TLPXXXF type
8.0 mm (min)
8.0 mm (min)
0.4 mm (min)
Unit in mm
4.58±0.25
6 5 4
3.65
+0.15
−0.25
6.8±0.25
1 2 3
±2.0 A (max)
2 mA (max)
15 to 30 V
I
FLH
= 5 mA (max)
500 ns (max)
±15 kV/μs (min)
5000 Vrms (min)
TOSHIBA
Guaranteed performance over temperature:
−40
to 100°C
1.27±0.2
0.4±0.1
1.25±0.25
9.7±0.3
11-5J1
0.25±
+0.10
−0.05
7.62±0.25
11-5J1
Weight: 0.26 g (t y p .)
Pin Configuration
(Top View)
1
2
3
SHIELD
•
•
UL recognized:
Option (D4) type
TÜV approved:
UL1577, File No. E67349
EN60747-5-2
6
5
4
Maximum operating insulation voltage: 890 V
pk
Highest permissible over voltage:
8000 V
pk
( Note ) When a EN60747-5-2 approved type is needed,
please designate the “Option(D4)”
1: ANODE
2: N.C
3: CATHODE
4: GND
5: V
O
( OUTPUT )
6: V
CC
Schematic
(M1)
I
F
I
CC
V
CC
6
I
O
V
O
5
GND
4
Truth Table
Input
H
L
LED
ON
OFF
M1
ON
OFF
M2
OFF
ON
Output
H
L
1＋
V
F
3－
(M2)
SHIELD
A 0.1-μF bypass capacitor must be connected
between pins 6 and 4. (See Note 6.)
1
2010-02-23
4.0
−0.20
+0.25
TLP700
Absolute Maximum Ratings
(Ta
=
25 °C)
Characteristics
Forward current
Forward current derating (Ta
≥
85°C)
LED
Peak transient forward current
Reverse voltage
Junction temperature
“H” peak output current
Detector
“L” peak output current
Output voltage
Supply voltage
Junction temperature
Operating frequency
Operating temperature range
Storage temperature range
Lead soldering temperature (10 s)
Isolation voltage (AC, 1 minute, R.H.
≤
60%)
(Note 4)
(Note 5)
(Note 3)
Ta=-40 to 100 °C
(Note 2)
(Note 1)
Symbol
I
F
ΔI
F
/ΔTa
I
FP
V
R
Tj
I
OPH
I
OPL
V
O
V
CC
Tj
f
Topr
Tstg
Tsol
BV
S
Rating
20
−0.54
1
5
125
−2.0
2.0
35
35
125
50
−40
to 100
−55
to 125
260
5000
Unit
mA
mA/°C
A
V
°C
A
A
V
V
°C
kHz
°C
°C
°C
Vr m s
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1:
Note 2:
Note 3:
Note 4:
Note 5:
Pulse width P
W
≤
1
μs,
300 pps
Exponential waveform pulse width P
W
≤
0.3
μs,
f
≤15
kHz
Exponential waveform I
OPH
≥−1.5
A (≤ 0.3
μs),
I
OPL
≤+1.5
A (≤ 0.3
μs),
Ta=100°C
For the effective lead soldering area
Device considered a two-terminal device: pins 1, 2 and 3 paired with pins 4, 5 and 6 respectively.
Note 6: A ceramic capacitor (0.1
μF)
should be connected from pin 6 to pin 4 to stabilize the operation of the high
gain linear amplifier. Failure to provide the bypassing may impair the switching property.
The total lead length between capacitor and coupler should not exceed 1 cm.
Recommended Operating Conditions
Characteristics
Input current, ON
Input voltage, OFF
Supply voltage *
Peak output current
Operating temperature
(Note 8)
(Note 7)
Symbol
I
F (ON)
V
F (OFF)
V
CC
I
OPH
/ I
OPL
Topr
Min
7.5
0
15
⎯
−40
Typ.
⎯
⎯
⎯
⎯
⎯
Max
10
0.8
30
±
1.5
100
Unit
mA
V
V
A
°C
* This item denotes operating ranges, not meaning of recommended operating conditions.
Note : Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
Note 7: Input signal rise time (fall time)
≤
0.5
μs.
Note 8: If the Vcc rise slope is sharp, an internal circuit might not operate with stability. Please design the Vcc rise
slope under 3.0 V/μs.
2
2010-02-23
TLP700
Electrical Characteristics
(Ta
=
−40
to
100 °C, unless otherwise specified)
Characteristics
Forward voltage
Temperature coefficient of forward
voltage
Input reverse current
Input capacitance
“H” Level
(Note 9)
Symbol
V
F
∆V
F
/∆Ta
I
R
C
T
I
OPH1
I
OPH2
I
OPL1
I
OPL2
V
OH
V
OL
I
CCH
I
CCL
I
FLH
V
FHL
V
CC
V
UVLO+
V
UVLO-
UVLO
HYS
Test
Circuit
⎯
⎯
⎯
⎯
1
Test Condition
I
F
=
10 mA, Ta
=
25 °C
I
F
=
10 mA
V
R
=
5 V, Ta
=
25 °C
V
=0
V, f
=
1 MHz, Ta
=
25 °C
V
CC
=
15 V
I
F
=
5 mA
V
CC
=
15 V
I
F
=
0 mA
V6-5
=
3.5 V
V6-5
=
7 V
V5-4
=
2.5 V
V5-4
=
7 V
Min
⎯
⎯
⎯
⎯
⎯
⎯
1.0
1.5
11
⎯
⎯
⎯
⎯
0.8
15
11.0
9.5
⎯
Typ.*
1.57
−1.8
⎯
100
−1.4
⎯
1.4
⎯
13.7
-14.9
1.3
1.3
1.8
⎯
⎯
12.5
11.0
1.5
Max
1.75
⎯
10
⎯
−1.0
−1.5
⎯
⎯
⎯
V
-12.5
2.0
2.0
5
⎯
30
13.5
12.0
⎯
mA
mA
V
V
V
V
V
A
Unit
V
mV/°C
μA
pF
Output current
“L” Level
“H” Level
2
3
4
5
6
⎯
⎯
⎯
⎯
⎯
⎯
V
CC1
=+15V, V
EE1
=-15V
R
L
=
200Ω, I
F
=
5 mA
V
CC1
=+15V, V
EE1
=-15V
R
L
=
200Ω,V
F
=
0.8 V
V
CC
=
30 V
V
O
=Open
I
F
=
10 mA
I
F
=
0 mA
Output voltage
“L” Level
Supply current
Threshold input current
Threshold input voltage
Supply voltage
UVLO thresh hold
UVLO hysteresis
“H” Level
“L” Level
L
→
H
H
→
L
V
CC
=
15 V, V
O
> 1 V
V
CC
=
15 V, V
O
< 1 V
⎯
V
O
> 2.5V, I
F
= 5 mA
V
O
< 2.5V, I
F
= 5 mA
⎯
(
*
): All typical values are at Ta
=
25°C
Note 9: Duration of Io time
≤
50
μs,
1 pulse
Note 10: This product is more sensitive than conventional products to electrostatic discharge (ESD) owing to its low
power consumption design.
It is therefore all the more necessary to observe general precautions regarding ESD when handling this
component.
Isolation Characteristics
(Ta = 25 °C)
Characteristic
Capacitance input to output
Isolation resistance
Symbol
C
S
R
S
Test Condition
Vs = 0 V , f = 1MHz
R.H.
≤
60 %, V
S
= 500 V
AC, 1 minute
Isolation voltage
BV
S
AC, 1 second, in oil
DC, 1 minute, in oil
(Note 5)
(Note 5)
Min
⎯
1×10
12
Typ.
1.0
10
14
Max
⎯
⎯
⎯
⎯
⎯
Unit
pF
Ω
Vrms
Vdc
5000
⎯
⎯
⎯
10000
10000
3
2010-02-23
TLP700
Switching Characteristics
(Ta
=
−40
to
100 °C, unless otherwise specified)
Characteristics
L
→
H
H
→
L
Symbol
tp
LH
tp
HL
tr
tf
| tp
HL
-tp
LH
|
CM
H
8
CM
L
7
V
CC
=
30 V
R
g
=
20
Ω
C
g
=
10 nF
Test
Circuit
Test Condition
I
F
=
0
→
5 mA
I
F
=
5
→
0 mA
I
F
=
0
→
5 mA
I
F
=
5
→
0 mA
I
F
=
0
↔
5 mA
I
F
=
5 mA
V
CM
=1000
Vp-p V
O (min)
=
26 V
Ta
=
25 °C
I
F
=
0 mA
V
CC
=
30 V
V
O (max)
=
1 V
Min
50
50
⎯
⎯
⎯
−15
15
Typ.*
⎯
⎯
50
50
⎯
⎯
⎯
Max
500
500
⎯
⎯
250
⎯
kV/μs
⎯
ns
Unit
Propagation delay time
Output rise time (10−90 %)
Output fall time (90−10 %)
Switching time dispersion
between ON and OFF
Common mode transient immunity
at HIGH level output
Common mode transient immunity
at LOW level output
( * ):
All typical values are at Ta
=
25 °C.
Test Circuit 1: I
OPH
1
6
V6-5
I
F
A
I
OPH
V
CC
0.1μF
3
4
Test Circuit 2: I
OPL
1
6
0.1μF
I
OPL
A
V
CC
3
4
V5-4
Test Circuit 3: V
OH
1
6
0.1μF
I
F
R
L
V
CC1
V
F
Test Circuit 4: V
OL
1
6
0.1μF
R
L
V
CC1
V
V
OH
3
4
V
EE1
3
4
V
V
OL
V
EE1
Test Circuit 5: I
CCH
1
6
I
CCH
A
0.1μF
V
CC
3
4
Test Circuit 6: I
CCL
1
6
I
CCL
A
0.1μF
V
CC
I
F
3
4
4
2010-02-23
TLP700
Test Circuit 7: t
p
LH
, t
p
HL
, t
r
, t
f
, | t
p
HL
-t
p
LH
|
(f=25kHz, duty=50%, less than tr=tf=5ns)
0.1
μF
I
F
1
6
V
O
Cg
=
10nF
I
F
V
CC
V
O
tp
LH
tr
tf
V
OH
90
%
50%
10
%
Rg
=
20
Ω
3
4
tp
HL
V
OL
Test Circuit 8: CM
H
, CM
L
I
F
SW
A
1
6
V
CM
B
0.1μF
V
O
V
CC
3
V
CM
4
90
%
10
%
tr
•
SW A: I
F
=
5 mA
V
O
1V
•
SW B: I
F
=
0 mA
CM
H
=
−
CM
L
=
800 V
tf (μs)
800 V
tr (μs)
26V
CM
L
tf
CM
H
1000 V
+
−
CM
L
(CM
H
) is the maximum rate of rise (fall) of the common mode voltage that can be sustained with the output
voltage in the LOW (HIGH) state.
5
2010-02-23
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