SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
FEATURES
・Low
Collector-Emitter Saturation Voltage
: V
CE(sat)
=2.0V(Max.).
S
E
A
KTC2028
EPITAXIAL PLANAR NPN TRANSISTOR
C
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
P
Q
R
S
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation (Tc=25℃)
Junction Temperature
Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
CES
V
EBO
I
C
I
CP
I
B
P
C
T
j
T
stg
RATING
130
100
130
8
5
10
0.5
30
150
-55½150
UNIT
V
V
V
N
N
D
K
L
M
L
R
D
MILLIMETERS
_
10.0 + 0.3
_
15.0 + 0.3
_
2.70 + 0.3
0.76+0.09/-0.05
_
Φ3.2
+ 0.2
_
3.0 + 0.3
_
12.0 + 0.3
0.5+0.1/-0.05
_
13.6 + 0.5
_
3.7 + 0.2
1.2+0.25/-0.1
1.5+0.25/-0.1
_
2.54 + 0.1
_
6.8 + 0.1
_
4.5 + 0.2
_
2.6 + 0.2
0.5 Typ
F
G
J
B
P
H
Q
V
A
A
A
W
℃
℃
1
2
3
1. BASE
2. COLLECTOR
3. EMITTER
TO-220IS
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
SYMBOL
I
CBO
I
CEO
I
EBO
V
(BR)CEO
h
FE
(1)
DC Current Gain
h
FE
(2)(Note)
h
FE
(3)
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
Collector Output Capacitance
V
CE(sat)
V
BE
f
T
C
ob
TEST CONDITION
V
CB
=130V, I
E
=0
V
CE
=60V, I
B
=0
V
EB
=8V, I
C
=0
I
C
=50mA, I
B
=0
V
CE
=5V, I
C
=1mA
V
CE
=5V, I
C
=1A
V
CE
=5V, I
C
=4A
I
C
=4A, I
B
=0.4A
V
CE
=5V, I
C
=1A
V
CE
=5V, I
C
=1A
V
CB
=10V, I
E
=0, f=1MHz
MIN.
-
-
-
100
35
70
20
-
-
-
-
TYP.
-
-
-
-
-
-
-
-
-
30
40
MAX.
10
1.5
1.0
-
-
240
-
2.0
1.5
-
-
V
V
MHz
pF
UNIT
μ
A
mA
V
2009. 12. 22
Revision No : 6
1/2
KTC2028
I
C
- V
CE
5.0
COLLECTOR CURRENT I
C
(A)
4.0
3.0
2.0
1.0
0
10
0
V
CE(sat)
- I
C
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CE(sat)
(V)
2
1
0.5
0.3
Tc=25 C
60
40
COMMON EMITTER
I
C
/I
B
=10
80
20
I
B
=10mA
COMMON EMITTER
Tc=25 C
0.1
0.05
0.03
0.01
0.03
0.1
0.3
Tc=-25 C
0
1.0
2.0
3.0
4.0
5.0
6.0
1
Tc
=7
5
C
3
10
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
COLLECTOR CURRENT I
C
(A)
h
FE
- I
C
500
DC CURRENT GAIN h
FE
COLLECTOR CURRENT I
C
(A)
300
Tc=75 C
SAFE OPERATING AREA
20
10
5
3
I
C
MAX.(PULSED)
I
C
MAX.
(CONTINUOUS)
*
*
1mS
100
Tc=25 C
Tc=-25 C
DC
1
0.5
0.3
*
OP
Tc ER
=2 AT
5 IO
C N
1s
COMMON EMITTER
V
CE
=5V
10
1
10
100
1000
10000
0.1
* SINGLE NONREPETITIVE
PULSE Tc=25 C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE
2
5
10
30
100
V
CEO
MAX.
S *
10m
S *
0m
10
300
COLLECTOR CURRENT I
C
(mA)
COLLECTOR-EMITTER VOLTAGE V (V)
CE
Pc - Ta
COLLECTOR POWER DISSIPATION
P
C
(W)
50
40
30
20
10
0
Tc=Ta
INIFINITE HEAT SINK
0
25
50
75
100
125
150
AMBIENT TEMPERATURE Ta ( C)
2009. 12. 22
Revision No : 6
2/2
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