INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistors
2SD1238
DESCRIPTION
·Low
Collector Saturation Voltage
: V
CE(sat)
= 0.4V(Max)@ I
C
= 6A
·Wide
Area of Safe Operation
APPLICATIONS
·Designed
for relay drivers , high-speed inverters,
converters,and other general high-current switching
applications
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
VALUE
UNIT
V
CBO
Collector-Base Voltage
120
V
V
CEO
Collector-Emitter Voltage
120
V
V
EBO
Emitter-Base Voltage
5
V
I
C
Collector Current-Continuous
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
12
A
P
C
80
W
T
J
150
℃
T
stg
Storage Temperature Range
-55~150
℃
isc website：www.iscsemi.cn
1
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistors
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
CE(
sat
)
V
bE(
sat
)
I
CBO
I
EBO
h
FE-1
PARAMETER
Collector-Emitter Breakdown Voltage
Collector-Emitter Saturation Voltage
Base -Emitter Saturation Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
CONDITIONS
I
C
= 50mA ; R
BE
=
∞
I
C
= 6A; I
B
= 0.6A
I
C
= 6A; I
B
= 0.6A
V
CB
= 80V; I
E
= 0
V
EB
= 5V; I
C
=0
I
C
= 1A ; V
CE
= 2V
60
MIN
120
2SD1238
TYP.
MAX
UNIT
V
0.4
1.5
100
100
V
V
μA
μA
isc website：www.iscsemi.cn
2
Automotive Electronics
京公网安备 11010802033920号
EEWORLD
