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GPP100KHE3/54

Description
10A, 800V, SILICON, RECTIFIER DIODE,
CategoryDiscrete semiconductor    diode   
File Size83KB,4 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance  
Download Datasheet Parametric View All

GPP100KHE3/54 Overview

10A, 800V, SILICON, RECTIFIER DIODE,

GPP100KHE3/54 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerVishay
package instructionO-PALF-W2
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresFREE WHEELING DIODE, LOW LEAKAGE CURRENT
applicationGENERAL PURPOSE
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.05 V
JESD-30 codeO-PALF-W2
JESD-609 codee3
Maximum non-repetitive peak forward current440 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-55 °C
Maximum output current10 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
GuidelineAEC-Q101
Maximum repetitive peak reverse voltage800 V
Maximum reverse current5 µA
Maximum reverse recovery time5.5 µs
surface mountNO
Terminal surfaceMATTE TIN
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Not Available for New Designs
GPP100D, GPP100G, GPP100J, GPP100K, GPP100M
www.vishay.com
Vishay General Semiconductor
Glass Passivated Junction Plastic Rectifier
FEATURES
• Glass passivated chip junction
• Low forward voltage drop
• Low leakage current, typical I
R
less than 0.2 μA
• High forward surge capability
• Meets environmental standard MIL-S-19500
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
P600
TYPICAL APPLICATIONS
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
at I
F
= 10 A
I
R
T
J
max.
Package
Diode variations
10 A
200 V, 400 V, 600 V, 800 V, 1000 V
440 A
1.05 V
5.0 μA
175 °C
P600
Single die
For use in general purpose rectification of power supplies,
inverters, converters, and freewheeling diodes application.
MECHANICAL DATA
Case:
P600, molded epoxy over passivated junction
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity:
Color band denotes cathode end
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375" (9.5 mm) lead length at T
A
= 50 °C
Peak forward surge current 8.3 ms single
half sine-wave superimposed on rated load
Operating junction and storage
temperature range
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
T
J
, T
STG
GPP100D
200
140
200
GPP100G
400
280
400
GPP100J
600
420
600
10
440
- 55 to + 175
GPP100K
800
560
800
GPP100M
1000
700
1000
UNIT
V
V
V
A
A
°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum instantaneous
forward voltage
Maximum reverse current
Typical reverse recovery
time
Typical junction
capacitance
TEST CONDITIONS
I
F
= 10 A
Rated V
R
T
A
= 25 °C
T
A
= 100 °C
SYMBOL
V
F
(1)
I
R
t
rr (2)
C
J
GPP100D
GPP100G
GPP100J
1.05
5.0
100
5.5
110
GPP100K
GPP100M
UNIT
V
μA
μs
pF
I
F
= 0.5 A, I
R
= 1.0 A,
I
rr
= 0.25 A
4.0 V, 1 MHz
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: 40 ms pulse width,
Revision: 14-Aug-13
Document Number: 89952
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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