AP6942GMT-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
D1 D1 D2 D2
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼
Simple Drive Requirement
▼
Good Thermal Performance
▼
Fast Switching Performance
▼
RoHS Compliant & Halogen-Free
N-CH BV
DSS
R
DS(ON)
I
D
P-CH BV
DSS
R
DS(ON)
S1 G1 S2 G2
30V
9mΩ
15.8A
-20V
23mΩ
-10.1A
D1
D1
D2
D2
Description
I
D
AP6942 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The PMPAK
®
5x6 package is special for voltage conversion
application using standard infrared reflow technique with the
backside heat sink to achieve the good thermal performance.
S1
G1
S2
G2
PMPAK
®
5x6
Units
-20
+12
-10.1
-8.1
40
V
V
A
A
A
W
℃
℃
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Continuous Drain Current
Pulsed Drain Current
1
3
Rating
N-channel
30
+20
15.8
12.6
60
3.57
-55 to 150
-55 to 150
P-channel
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
3
Rating
N-channel
7.2
35
P-channel
6
35
Units
℃/W
℃/W
1
201208061
Data and specifications subject to change without notice
AP6942GMT-HF
N-CH Electrical Characteristics@T
j
=25 C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Test Conditions
V
GS
=0V, I
D
=250uA
V
GS
=10V, I
D
=12A
V
GS
=4.5V, I
D
=8A
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=12A
V
DS
=24V, V
GS
=0V
V
GS
=+20V, V
DS
=0V
I
D
=12A
V
DS
=15V
V
GS
=4.5V
V
DS
=15V
I
D
=1A
R
G
=3.3Ω
V
GS
=5V
V
GS
=0V
V
DS
=15V
f=1.0MHz
f=1.0MHz
Min.
30
-
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
24
-
-
14.5
4
7
15
12
22
9
190
160
1.1
Max. Units
-
9
13.5
3
-
10
+100
23.2
-
-
-
-
-
-
-
-
2.2
V
mΩ
mΩ
V
S
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
o
1650 2640
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward On Voltage
2
Test Conditions
I
S
=2.9A, V
GS
=0V
I
S
=12A,
V
GS
=0
V
,
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
20
12
Max. Units
1.2
-
-
V
ns
nC
Reverse Recovery Time
Reverse Recovery Charge
2
AP6942GMT-HF
P-CH Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Test Conditions
V
GS
=0V, I
D
=-250uA
V
GS
=-4.5V, I
D
=-7A
V
GS
=-2.5V, I
D
=-5A
V
DS
=V
GS
, I
D
=-250uA
V
DS
=-10V, I
D
=-7A
V
DS
=-16V, V
GS
=0V
V
GS
=+12V, V
DS
=0V
I
D
=-7A
V
DS
=-10V
V
GS
=-4.5V
V
DS
=-10V
I
D
=-1A
R
G
=3.3Ω
V
GS
=-5V
V
GS
=0V
V
DS
=-10V
f=1.0MHz
f=1.0MHz
Min.
-20
-
-
-0.3
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
28
-
-
28
3.5
9
13
21
77
56
320
300
4
Max.
-
23
30
-1.2
-
-10
+100
44.8
-
-
-
-
-
-
-
-
8
Unit
V
mΩ
mΩ
V
S
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
2440 3900
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward On Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
I
S
=-2.9A, V
GS
=0V
I
S
=-7A, V
GS
=0V,
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
24
14
Max. Units
-1.2
-
-
V
ns
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in
2
copper pad of FR4 board, t <10sec ; 85
o
C/W at steady state.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
3
AP6942GMT-HF
N-Channel
60
60
T
A
=25 C
50
o
I
D
, Drain Current (A)
40
I
D
, Drain Current (A)
10V
7.0V
6.0V
5.0V
V
G
= 4.0V
T
A
= 150 C
50
o
40
10V
7.0V
6.0V
5.0V
V
G
= 4.0V
30
30
20
20
10
10
0
0
2
4
6
0
0
2
4
6
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
14
1.8
I
D
=8A
T
A
=25 C
Normalized R
DS(ON)
o
I
D
=12A
V
G
=10V
R
DS(ON)
(m
Ω
)
12
1.4
10
1.0
8
2
4
6
8
10
0.6
-50
0
50
100
150
V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
12
I
D
=250uA
10
1.6
8
Normalized V
GS(th)
I
S
(A)
1.2
6
o
T
j
=150 C
T
j
=25
o
C
0.8
4
0.4
2
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0.0
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
4
AP6942GMT-HF
N-Channel
10
2000
f=1.0MHz
V
GS
, Gate to Source Voltage (V)
8
I
D
= 12 A
V
DS
= 10 V
C (pF)
1800
1600
C
iss
1400
6
1200
1000
4
800
600
2
400
200
0
0
6
12
18
24
30
0
1
5
9
13
17
21
25
C
oss
C
rss
29
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Duty factor=0.5
Normalized Thermal Response (R
thja
)
Operation in this area
limited by R
DS(ON)
10
0.2
100us
I
D
(A)
1ms
1
0.1
0.1
0.05
0.02
0.01
P
DM
t
T
10ms
100ms
1s
0.1
0.01
Single Pulse
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
R
thja
= 85℃/W
o
T
A
=25 C
Single Pulse
DC
0.01
0.01
0.1
1
10
100
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
60
20
V
DS
=5V
50
I
D
, Drain Current (A)
40
I
D
, Drain Current (A)
T
j
=150
o
C
T
j
=25
o
C
T
j
= -40
o
C
16
12
30
8
20
4
10
0
0
1
2
3
4
5
6
0
25
50
75
100
125
150
V
GS
, Gate-to-Source Voltage (V)
T
A
, Ambient Temperature ( C )
o
Fig 11. Transfer Characteristics
Fig 12. Maximum Continuous Drain
Current v.s. Ambient Temperature
5
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