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AP9430GYT-HF

Description
Simple Drive Requirement, Small Size & Lower Profile
CategoryDiscrete semiconductor    The transistor   
File Size93KB,4 Pages
ManufacturerAPEC
Download Datasheet Parametric View All

AP9430GYT-HF Overview

Simple Drive Requirement, Small Size & Lower Profile

AP9430GYT-HF Parametric

Parameter NameAttribute value
MakerAPEC
package instructionSMALL OUTLINE, S-PDSO-N5
Contacts8
Reach Compliance Codecompli
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain-source on-resistance0.0045 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeS-PDSO-N5
Number of components1
Number of terminals5
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeSQUARE
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)80 A
Certification statusNot Qualified
surface mountYES
Terminal formNO LEAD
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
AP9430GYT-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
Simple Drive Requirement
Small Size & Lower Profile
RoHS Compliant & Halogen-Free
G
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BV
DSS
R
DS(ON)
I
D
D
30V
4.5mΩ
23A
S
Description
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, ruggedized device design, low on-
resistance and cost-effectiveness.
The PMPAK
®
3 x 3 package is special for DC-DC converters
application and lower 1.0mm profile with backside heat sink.
S
S
S
D
D
D
G
PMPAK
®
3 x 3
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Continuous Drain Current
Pulsed Drain Current
1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
3
Rating
30
+20
23
18.4
80
3.57
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
3
Value
4
35
Unit
℃/W
℃/W
1
201205252
Data and specifications subject to change without notice
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