AP95T07GS
RoHS-compliant Product
Advanced Power
Electronics Corp.
▼
Simple Drive Requirement
▼
Lower On-resistance
▼
Fast Switching Characteristic
G
S
D
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
BV
DSS
R
DS(ON)
I
D
75V
5mΩ
80A
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-263 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
GD
S
TO-263(S)
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
E
AS
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
3
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy
4
Storage Temperature Range
Operating Junction Temperature Range
Rating
75
+20
80
70
320
300
2
450
-55 to 175
-55 to 175
Units
V
V
A
A
A
W
W/℃
mJ
℃
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)
5
Value
0.5
40
Units
℃/W
℃/W
Data and specifications subject to change without notice
1
200901122
AP95T07GS
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Test Conditions
V
GS
=0V, I
D
=1mA
V
GS
=10V, I
D
=60A
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=60A
V
DS
=75V, V
GS
=0V
V
GS
= +20V, V
DS
=0V
I
D
=80A
V
DS
=40V
V
GS
=10V
V
DS
=40V
I
D
=80A
R
G
=3.3Ω,V
GS
=10V
R
D
=0.5Ω
V
GS
=0V
V
DS
=25V
f=1.0MHz
f=1.0MHz
Min.
75
-
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
88
-
-
-
85
25
36
22
160
38
165
985
390
1.2
Max. Units
-
5
4
-
10
250
+100
135
-
-
-
-
-
-
-
-
1.8
V
mΩ
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
Drain-Source Leakage Current (T
j
=125
o
C)
V
DS
=60V ,V
GS
=0V
4290 6870
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward On Voltage
2
Reverse Recovery Time
2
Test Conditions
I
S
=60A, V
GS
=0V
I
S
=40A, V
GS
=0V
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
75
190
Max. Units
1.3
-
-
V
ns
nC
Reverse Recovery Charge
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Package limitation current is 80A, calculated continuous current
based on maximum allowable junction temperature is 169A.
4.Starting T
j
=25
o
C , L=1mH , I
AS
=30A.
5.Surface mounted on 1 in
2
copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP95T07GS
250
120
T
C
= 25 C
200
o
I
D
, Drain Current (A)
I
D
, Drain Current (A)
10 V
9.0 V
8.0 V
7.0 V
T
C
= 1 75
o
C
100
80
10V
9.0V
8.0V
7.0V
V
G
= 6.0 V
150
60
100
V
G
= 6.0 V
50
40
20
0
0
1
2
3
4
0
0
1
2
3
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
12
2.4
I
D
=30A
T
C
=25 C
10
o
I
D
=60A
V
G
=10V
2.0
Normalized R
DS(ON)
4
5
6
7
8
9
10
R
DS(ON)
(m
Ω
)
1.6
8
1.2
6
0.8
4
0.4
-50
0
50
100
150
200
V
GS
Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.4
60
50
1.2
40
T
j
=175
o
C
T
j
=25
o
C
Normalized V
GS(th)
(V)
I
S
(A)
1
30
0.8
20
0.6
10
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0.4
-50
0
50
100
150
200
V
SD
, Source-to-Drain Voltage (V)
T
j
,Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP95T07GS
f=1.0MHz
14
10000
I
D
= 80 A
12
V
GS
, Gate to Source Voltage (V)
10
8
C (pF)
V
DS
= 40 V
V
DS
= 48 V
V
DS
= 64 V
C
iss
1000
C
oss
C
rss
6
4
2
0
0
20
40
60
80
100
120
100
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
V
DS
,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
1
100us
100
Normalized Thermal Response (R
thjc
)
Duty factor=0.5
0.2
I
D
(A)
0.1
1ms
10ms
10
0.1
0.05
P
DM
t
0.02
T
c
=25
o
C
Single Pulse
1
0.1
1
10
100ms
DC
T
0.01
Single Pulse
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
0.01
100
1000
0.00001
0.0001
0.001
0.01
0.1
1
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
10V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
ADVANCED POWER ELECTRONICS CORP.
Package Outline : TO-263
E
E3
E1
E2
D2
SYMBOLS
MIN
Millimeters
NOM
MAX
A
A1
A2
4.25
0.00
2.20
0.70
1.07
0.30
1.15
8.30
4.75
0.15
2.45
0.90
1.27
0.45
1.30
8.90
5.10(ref)
1.27(ref)
5.20
0.30
2.70
1.10
1.47
0.60
1.45
9.40
D1
D
b
b1
c
c1
D
L2
b1
L3
b
D1
D2
E
E1
E2
9.70
10.10
7.40(ref)
6.40(ref)
8.00(ref)
10.50
e
L4
E3
e
L1
L2
2.04
2.54
2.54(ref)
1.50
3.04
A
A
A2
L3
L4
θ
c1
c1
4.50
0°
4.90
1.50
-----
5.30
5°
c
θ
A1
A1
L1
1.All Dimensions Are in Millimeters.
2.Dimension Does Not Include Mold Protrusions.
Part Marking Information & Packing : TO-263
Part Number
meet Rohs requirement
for low voltage MOSFET only
95T07GS
YWWSSS
Package Code
LOGO
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
5
Real-time operating system RTOS
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