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AP9620AGM-HF

Description
Capable of 2.5V Gate Drive, Lower On-resistance
CategoryDiscrete semiconductor    The transistor   
File Size91KB,4 Pages
ManufacturerAPEC
Environmental Compliance
Download Datasheet Parametric View All

AP9620AGM-HF Overview

Capable of 2.5V Gate Drive, Lower On-resistance

AP9620AGM-HF Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Parts packaging codeSOT
package instructionSMALL OUTLINE, R-PDSO-G8
Contacts8
Reach Compliance Codecompli
ECCN codeEAR99
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage20 V
Maximum drain current (ID)9 A
Maximum drain-source on-resistance0.021 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G8
Number of components1
Number of terminals8
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeP-CHANNEL
Maximum pulsed drain current (IDM)40 A
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
AP9620AGM-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
Capable of 2.5V Gate Drive
Lower On-resistance
Fast Switching Characteristic
RoHS Compliant & Halogen-Free
SO-8
S
S
D
D
D
D
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
BV
DSS
R
DS(ON)
S
G
-20V
21mΩ
-9A
I
D
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
D
G
The SO-8 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
S
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Continuous Drain Current
3
Pulsed Drain Current
1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
-20
+8
-9
-7.1
-40
2.5
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
3
Value
50
Unit
℃/W
Data and specifications subject to change without notice
1
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