AP9960GH/J
Pb Free Plating Product
Advanced Power
Electronics Corp.
▼
Simple Drive Requirement
▼
Low Gate Charge
▼
Fast Switching
G
S
D
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
BV
DSS
R
DS(ON)
I
D
40V
16mΩ
42A
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP9960GJ) are available for low-profile applications.
GD
S
G D
S
TO-252(H)
TO-251(J)
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Rating
40
±20
42
26
195
45
0.36
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Value
2.8
110
Units
℃/W
℃/W
Data and specifications subject to change without notice
201007042
AP9960GH/J
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
ΔBV
DSS
/ΔT
j
Parameter
Drain-Source Breakdown Voltage
Test Conditions
V
GS
=0V, I
D
=250uA
Min.
40
-
-
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.032
Max. Units
-
-
16
25
3
-
1
25
±100
-
-
-
-
-
-
-
-
-
-
V
V/℃
mΩ
mΩ
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Breakdown Voltage Temperature Coefficient
Reference to 25℃, I
D
=1mA
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Static Drain-Source On-Resistance
V
GS
=10V, I
D
=20A
V
GS
=4.5V, I
D
=18A
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=20A
V
DS
=40V, V
GS
=0V
V
DS
=32V ,V
GS
=0V
V
GS
= ±20V
I
D
=20A
V
DS
=20V
V
GS
=4.5V
V
DS
=20V
I
D
=20A
R
G
=3.3Ω,V
GS
=10V
R
D
=1Ω
V
GS
=0V
V
DS
=25V
f=1.0MHz
-
-
-
30
-
-
-
18
6
12
9
110
23
10
1500
250
180
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (T
j
=25
o
C)
Drain-Source Leakage Current (T
j
=150
o
C)
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward On Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
I
S
=45A, V
GS
=0V
I
S
=20A, V
GS
=0V
dI/dt = 100A/us
Min.
-
-
-
Typ.
-
22
27.4
Max. Units
1.3
-
-
V
ns
nC
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
AP9960GH/J
200
120
T
C
=25 C
I
D
, Drain Current (A)
150
o
10V
8.0V
I
D
, Drain Current (A)
T
C
=150 C
o
10V
8.0V
80
6.0V
100
6.0V
40
50
V
G
=4.0V
V
G
=4.0V
0
0.0
1.0
2.0
3.0
4.0
0
0
1
2
3
4
5
6
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
50
1.8
40
Normalized R
DS(ON)
I
D
=20A
T
C
=25
℃
I
D
=20A
V
G
=10V
1.4
R
DS(ON)
(m
Ω
)
30
20
1.0
10
0
2
4
6
8
10
0.6
-50
0
50
100
150
V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.5
100
2.0
10
I
S
(A)
o
T
j
=150 C
T
j
=25
o
C
V
GS(th)
(V)
1.6
1.5
1
1.0
0
0.0
0.4
0.8
1.2
0.5
-50
25
100
175
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C )
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
AP9960GH/J
f=1.0MHz
14
10000
12
I
D
=20A
V
DS
=12V
V
DS
=16V
V
DS
=20V
V
GS
, Gate to Source Voltage (V)
10
8
C (pF)
C
iss
1000
6
4
2
C
oss
C
rss
100
0
10
20
30
40
0
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
1
Duty factor=0.5
Normalized Thermal Response (R
thjc
)
0.2
100
10us
0.1
0.1
0.05
I
D
(A)
0.02
100us
10
0.01
1ms
T
c
=25
o
C
Single Pulse
0.01
Single Pulse
P
DM
t
10ms
100ms
1
10
100
T
Duty factor = t/T
Peak T
j
= P
DM
x Rthjc + Tc
1
0.1
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
4.5V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
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