AP9965GEM
Pb Free Plating Product
Advanced Power
Electronics Corp.
▼
Low On-Resistance
▼
Simple Drive Requirement
▼
Dual N MOSFET Package
▼
RoHS Compliant
SO-8
S1
G1
D1
D2
D1
D2
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
BV
DSS
R
DS(ON)
I
D
G2
S2
40V
28mΩ
6.7A
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
D1
G1
G2
D2
S1
S2
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Continuous Drain Current
3
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Rating
40
±16
6.7
5.2
30
2
0.016
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient
3
Max.
Value
62.5
Unit
℃/W
Data and specifications subject to change without notice
200622062-1/4
AP9965GEM
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
ΔBV
DSS
/ΔT
j
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Test Conditions
V
GS
=0V, I
D
=250uA
Min.
40
-
-
-
0.8
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.045
-
-
-
6
-
-
-
8.3
1.5
3.6
4.6
7
19.6
5.4
615
90
60
1.8
Max. Units
-
-
28
32
2.5
-
1
25
±30
13
-
-
-
-
-
-
980
-
-
2.7
V
V/℃
mΩ
mΩ
V
S
uA
uA
uA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
Breakdown Voltage Temperature Coefficient
Reference to 25℃, I
D
=1mA
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
V
GS
=10V, I
D
=6A
V
GS
=4.5V, I
D
=4A
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=6A
V
DS
=40V, V
GS
=0V
V
DS
=32V, V
GS
=0V
V
GS
=±16V
I
D
=6A
V
DS
=30V
V
GS
=4.5V
V
DS
=20V
I
D
=1A
R
G
=3.3Ω,V
GS
=10V
R
D
=20Ω
V
GS
=0V
V
DS
=25V
f=1.0MHz
f=1.0MHz
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (T
j
=25
o
C)
Drain-Source Leakage Current (T
j
=70
o
C)
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Source-Drain Diode
Symbol
V
SD
Parameter
Forward On Voltage
2
Reverse Recovery Time
2
Reverse Recovery Charge
Test Conditions
I
S
=1.7A, V
GS
=0V
I
S
=6A,
V
GS
=0
V
,
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
20
14
Max. Units
1.2
-
-
V
ns
nC
t
rr
Q
rr
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in
2
copper pad of FR4 board, t <10sec ; 135
℃/W
when mounted on Min. copper pad.
2/4
AP9965GEM
30
T
A
= 25
o
C
I
D
, Drain Current (A)
10V
7.0 V
5.0 V
4.5 V
V
G
= 3.0 V
I
D
, Drain Current (A)
30
T
A
= 150
o
C
20
20
10V
7.0 V
5.0 V
4.5 V
V
G
= 3.0 V
10
10
0
0
1
2
3
4
0
0
1
2
3
4
5
6
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
70
1.6
I
D
=4A
T
A
=25
℃
Normalized R
DS(ON)
2
4
6
8
10
I
D
=6A
V
G
=10V
1.3
R
DS(ON)
(m
Ω
)
45
1.0
20
0.7
25
50
75
100
125
150
V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature (
o
C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
50.0
8
6
40.0
I
S
(A)
T
j
=150
o
C
4
T
j
=25
o
C
R
DS(ON)
(mΩ)
V
GS
=4.5V
30.0
V
GS
=10V
20.0
2
0
10.0
0
0.2
0.4
0.6
0.8
1
1.2
0
10
20
30
40
V
SD
, Source-to-Drain Voltage (V)
I
D
, Drain Current (A)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. On-Resistance vs.
Drain Current
3/4
AP9965GEM
f=1.0MHz
16
10000
V
GS
, Gate to Source Voltage (V)
I
D
=6A
12
8
C (pF)
V
DS
= 20 V
V
DS
= 25 V
V
DS
= 30 V
1000
C
iss
100
4
C
oss
C
rss
0
0
5
10
15
20
10
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Normalized Thermal Response (R
thja
)
Duty factor=0.5
10
0.2
100us
1ms
0.1
0.1
I
D
(A)
0.05
1
10ms
100ms
0.02
0.01
P
DM
t
T
0.01
Single Pulse
0.1
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
R
thja
= 135℃/W
T
A
=25 C
Single Pulse
0.01
0.1
1
10
o
1s
DC
0.001
100
0.0001
0.001
0.01
0.1
1
10
100
1000
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
30
V
DS
=5V T
j
=25
o
C
T
j
=150 C
o
V
G
Q
G
I
D
, Drain Current (A)
20
4.5V
Q
GS
Q
GD
10
Charge
0
Q
0
2
4
6
V
GS
, Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4/4
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