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AP9992AGP-HF

Description
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size133KB,4 Pages
ManufacturerAPEC
Download Datasheet Parametric View All

AP9992AGP-HF Overview

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP9992AGP-HF Parametric

Parameter NameAttribute value
MakerAPEC
Parts packaging codeTO-220AB
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage60 V
Maximum drain current (ID)120 A
Maximum drain-source on-resistance0.0035 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)300 A
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
AP9992AGP-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
Simple Drive Requirement
Lower On-resistance
Lower Gate Charge
RoHS Compliant & Halogen-Free
G
S
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BV
DSS
R
DS(ON)
I
D
60V
3.5mΩ
161A
Description
AP9992A series are from Advanced Power innovated
the
The Advanced Power MOSFETs from APEC provide
design and silicon
process technology to achieve the lowest possible on-resistance and fast
designer with the best combination of fast switching,
switching performance. It provides the designer with an extreme efficient
ruggedized device design, low on-resistance and cost-effectiveness.
device for use in a wide range of power applications
The TO-220 package is widely preferred for all commercial-industrial
G
D
through hole applications. The low thermal resistance and low package
S
cost contribute to the worldwide popular package.
TO-220(P)
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Chip)
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Total Power Dissipation
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
3
Rating
60
+20
161
120
102
300
166
2
-55 to 150
-55 to 150
Units
V
V
A
A
A
A
W
W
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Value
0.75
62
Units
℃/W
℃/W
1
201205111
Data and specifications subject to change without notice
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