New Product
VS-APU3006-F3, VS-APU3006-N3, VS-EPU3006-F3, VS-EPU3006-N3
www.vishay.com
Vishay Semiconductors
Ultrafast Rectifier, 30 A FRED Pt
®
FEATURES
• Low forward voltage drop
• Ultrafast recovery time
• 175 °C operating junction temperature
• Compliant to RoHS Directive 2002/95/EC
TO-247AC
Base cathode
4, 2
TO-247AC modified
Base cathode
2
• Designed and
JEDEC-JESD47
qualified
according
to
• Halogen-free according to IEC 61249-2-21
definition (-N3 only)
1
Anode
3
Anode
1
Cathode
3
Anode
DESCRIPTION/APPLICATIONS
Ultralow V
F
, soft-switching ultrafast rectifiers optimized for
Discontinuous (Critical) Mode (DCM) Power Factor
Correction (PFC).
The minimized conduction loss, optimized stored charge
and low recovery current minimized the switching losses
and reduce over dissipation in the switching element and
snubbers.
The device is also intended for use as a freewheeling diode
in power supplies and other power switching applications.
VS-APU3006-F3
VS-APU3006-N3
VS-EPU3006-F3
VS-EPU3006-N3
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
t
rr
typ.
T
J
max.
Diode variation
TO-247AC,
TO-247AC modified (2 pins)
30 A
600 V
2V
30 ns
175 °C
Single die
APPLICATIONS
AC/DC SMPS 70 W to 400 W
e.g. laptop and printer AC adaptors, desktop PC, TV and
monitor, games units, and DVD AC/DC power supplies.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Repetitive peak reverse voltage
Average rectified forward current
Non-repetitive peak surge current
Operating junction and storage
temperatures
SYMBOL
V
RRM
I
F(AV)
I
FSM
T
J
, T
Stg
T
C
= 127 °C
T
C
= 25 °C
TEST CONDITIONS
MAX.
600
30
200
- 65 to 175
UNITS
V
A
°C
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage
SYMBOL
V
BR
,
V
R
V
F
I
R
C
T
L
S
I
R
= 100 μA
I
F
= 30 A
I
F
= 30 A, T
J
= 150 °C
V
R
= V
R
rated
T
J
= 150 °C, V
R
= V
R
rated
V
R
= 600 V
Measured lead to lead 5 mm from package body
TEST CONDITIONS
MIN.
600
-
-
-
-
-
-
TYP.
-
1.4
1.15
-
-
20
8.0
MAX.
-
2
1.35
30
250
-
-
μA
pF
nH
V
UNITS
Reverse leakage current
Junction capacitance
Series inductance
Revision: 15-Aug-11
Document Number: 93570
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
VS-APU3006-F3, VS-APU3006-N3, VS-EPU3006-F3, VS-EPU3006-N3
www.vishay.com
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
I
F
= 1 A, dI
F
/dt = 50 A/μs, V
R
= 30 V
Reverse recovery time
t
rr
T
J
= 25 °C
T
J
= 125 °C
Peak recovery current
I
RRM
Q
rr
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
I
F
= 30 A
dI
F
/dt = 200 A/μs
V
R
= 200 V
MIN.
-
-
-
-
-
-
-
TYP.
30
45
100
5.6
10
127
580
MAX.
45
-
-
-
-
-
-
A
ns
UNITS
Reverse recovery charge
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Thermal resistance,
junction to case
Thermal resistance,
junction to ambient per leg
Thermal resistance,
case to heatsink
Weight
Mounting torque
Marking device
Case style TO-247AC
Case style TO-247AC modified
SYMBOL
T
J
, T
Stg
R
thJC
R
thJA
R
thCS
Typical socket mount
Mounting surface, flat, smooth and
greased
TEST CONDITIONS
MIN.
- 65
-
-
-
-
-
1.2
(10)
TYP.
-
0.7
-
0.5
2.0
0.07
-
MAX.
175
1.1
70
-
-
-
2.4
(20)
APU3006
EPU3006
g
oz.
kgf · cm
(lbf · in)
UNITS
°C
°C/W
Revision: 15-Aug-11
Document Number: 93570
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
VS-APU3006-F3, VS-APU3006-N3, VS-EPU3006-F3, VS-EPU3006-N3
www.vishay.com
Vishay Semiconductors
1000
100
Reverse Current - I
R
(μA)
10
1
0.1
0.01
0.001
0
100
200
300
400
500
600
175 °C
150 °C
125 °C
100 °C
75 °C
50 °C
25 °C
1000
100
Instantaneous Forward Current - I
F
(A)
T
J
= 175 °C
Reverse Voltage - V
R
(V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
1000
10
T
J
= 150 °C
Junction Capacitance - C
T
(pF)
100
T
J
= 25 °C
10
1
0.0
1
0.5
1.0
1.5
2.0
2.5
0
100
200
300
400
500
600
Forward Voltage Drop - V
FM
(V)
Reverse Voltage - V
R
(V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
10
Thermal Impedance Z
thJC
(°C/W)
D = 0.5
1
D = 0.2
D = 0.1
D = 0.05
0.1
D = 0.02
D = 0.01
Single
Pulse
(Thermal Resistance)
0.01
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
t1 , Rectangular Pulse Duration (s)
Fig. 4 - Max. Thermal Impedance Z
thJC
Characteristics
Revision: 15-Aug-11
Document Number: 93570
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
VS-APU3006-F3, VS-APU3006-N3, VS-EPU3006-F3, VS-EPU3006-N3
www.vishay.com
Vishay Semiconductors
180
Allowable Case Temperature (°C)
170
160
150
140
130
120
110
100
0
5
10
15
20
25
30
35
40
45
Average Forward Current - I
F(AV)
(A)
DC
Average Power Loss (W)
60
50
40
30
20
10
0
0
5
10
15
20
25
30
35
40
45
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
DC
RMS Limit
Average Forward Current - IF
(AV)
(V)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
130
120
110
1800
1600
1400
100
90
80
70
60
50
40
30
20
10
100
dI
F
/dt (A/μs)
typical value
200
I
F
= 30 A, 25 °C
typical value
1000
0
100
dI
F
/dt (A/μs)
1000
I
F
= 30 A, 25 °C
Q
rr
(nC)
t
rr
(ns)
I
F
= 30 A, 125 °C
1200
1000
800
I
F
= 30 A, 125 °C
600
400
Fig. 7 - Typical Reverse Recovery Time vs. dI
F
/dt
Fig. 8 - Typical Stored Charge vs. dI
F
/dt
Revision: 15-Aug-11
Document Number: 93570
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
VS-APU3006-F3, VS-APU3006-N3, VS-EPU3006-F3, VS-EPU3006-N3
www.vishay.com
Vishay Semiconductors
V
R
= 200 V
0.01
Ω
L = 70 μH
D.U.T.
dI
F
/dt
adjust
D
G
IRFP250
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
(3)
I
F
0
t
rr
t
a
t
b
Q
rr
(2)
(4)
I
RRM
0.5 I
RRM
dI
(rec)M
/dt
(5)
0.75 I
RRM
(1)
dI
F
/dt
(1) dI
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4)
Q
rr
- area under curve defined by t
rr
and I
RRM
Q
rr
=
t
rr
x I
RRM
2
(5) dI
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
Fig. 10 - Reverse Recovery Waveform and Definitions
Revision: 15-Aug-11
Document Number: 93570
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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