BZY97-C11 THRU BZY97-C68
ZENER DIODES
DO-41 Plastic
FEATURES
♦
Silicon Power Zener Diodes
min. 1.0 (25.4)
♦
For use in stabilizing and clipping circuits with
high power rating.
max.
∅
0.11 (2.7)
max. 0.20 (5.2)
♦
The Zener voltages are graded according to the
international E 24 standard. Smaller voltage tolerances
are available upon request.
Cathode
Mark
min. 1.0 (25.4)
max.
∅
0.035 (0.9)
MECHANICAL DATA
Case:
DO-41 Plastic Case
Weight:
approx. 0.34 g
Dimensions are in inches and (millimeters)
MAXIMUM RATINGS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOL
VALUE
UNIT
Zener Current (see Table “Characteristics”)
Power Dissipation at T
amb
=60°C
Junction Temperature
Storage Temperature Range
P
tot
T
j
T
S
1.5
1)
150
– 55 to +150
Watts
°C
°C
Characteristics at Tamb = 25 °C
SYMBOL
MIN.
TYP.
MAX.
UNIT
Thermal Resistance
Junction to Ambient Air
R
thJA
–
–
60
1)
°C/W
NOTES:
(1) Valid provided that leads at a distance of 10 mm from case are kept at ambient temperature.
12/16/98
BZY97-C11 THRU BZY97-C68
ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
Zener
voltage
(1)
at
I
ZT
Type
BZY97 – C11
BZY97 – C12
BZY97 – C13
BZY97 – C15
BZY97 – C16
BZY97 – C18
BZY97 – C20
BZY97 – C22
BZY97 – C24
BZY97 – C27
BZY97 – C30
BZY97 – C33
BZY97 – C36
BZY97 – C39
BZY97 – C43
BZY97 – C47
BZY97 – C51
BZY97 – C56
BZY97 – C62
BZY97 – C68
min. max.
V
Z
(V)
10.4 … 11.6
11.4 … 12.7
12.4 … 14.1
13.8 … 15.6
15.3 … 17.1
16.8 … 19.1
18.8 … 21.2
20.8 … 23.3
22.8 … 25.6
25.1 … 28.9
28 … 32
31 … 35
34 … 38
37 … 41
40 … 46
44 … 50
48 … 54
52 … 60
58 … 66
64 … 72
Dynamic
resistance
at –I
ZT
f = 1 kHz
max
r
zj
(Ω)
7
7
10
10
15
15
15
15
15
15
15
15
40
40
45
45
60
60
80
80
Temp. coeff.
of Zener volt.
at
I
ZT
Test
current
I
ZT
(mA)
50
50
50
50
25
25
25
25
25
25
25
25
10
10
10
10
10
10
10
10
Leakage
current
I
R
(µA)
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
Reverse
voltage
V
R
(V)
5
7
7
10
10
10
10
12
12
14
14
17
17
20
20
24
24
28
28
34
Admissible
Zener current
at T
amb
= 60°C
I
Z
(mA)
129
118
106
96
88
79
71
64
59
52
47
43
40
37
33
30
28
25
23
21
I
ZSM
t
p
= 10 ms
(A)
1.3
1.2
1.1
1.0
0.90
0.81
0.73
0.66
0.60
0.53
0.48
0.44
0.40
0.38
0.33
0.31
0.28
0.26
0.23
0.21
α
VZ
(10
–4
/ K)
+5 … +10
+5 … +10
+5 … +10
+5 … +10
+6 … +11
+6 … +11
+6 … +11
+6 … +11
+6 … +11
+6 … +11
+6 … +11
+6 … +11
+6 … +11
+6 … +11
+7 … +12
+7 … +12
+7 … +12
+7 … +12
+7 … +12
+7 … +12
NOTES:
(1) Tested with pulses t
p
= 5 ms
(2) Consult factory for voltages above 68V
Embedded System
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