Battrax Quad Negative SLIC Protector
Battrax
Quad Negative SLIC Protector
(T)
6
Ground
5
(R)
4
This
Battrax
device is an integrated overvoltage protection solution for SLIC-based
(Subscriber Line Interface Circuit) line cards. This six-pin device is constructed using
four SCRs and four gate diodes.
The device is referenced to V
BAT
and conducts when a voltage that is more negative
than -V
REF
is applied to the cathode (pins 1, 3, 4, or 6) of the SCR. During conduction,
all negative transients are shorted to Ground. All positive transients are passed to
Ground by steering diodes.
For specific diagrams showing these
Battrax
applications, see Figure 3.37.
1
(T)
2
(-V
REF
)
3
(R)
Electrical Parameters
Part
Number *
B1101U_4 **
B1161U_4
**
B1201U_4
**
V
DRM
Volts
|-V
REF
| + |-1.2V|
|-V
REF
| + |-1.2V|
|-V
REF
| + |-1.2V|
V
S
Volts
|-V
REF
| + |-10V|
|-V
REF
| + |-10V|
|-V
REF
| + |-10V|
V
T
Volts
4
4
4
I
DRM
µAmps
5
5
5
I
GT
mAmps
100
100
100
I
T
Amps
2.2
2.2
2.2
I
H
mAmps
100
160
200
C
O
pF
50
50
50
* For individual “UA” and “UC” surge ratings, see table below.
** Contact factory for release date.
General Notes:
• All measurements are made at an ambient temperature of 25 °C. I
PP
applies to -40 °C through +85 °C temperature range.
• I
PP
is a repetitive surge rating and is guaranteed for the life of the product.
• I
PP
ratings assume a V
REF
= ±48 V.
• V
DRM
is measured at I
DRM.
• V
S
is measured at 100 V/µs.
• Off-state capacitance (C
O
) is measured at 1 MHz with a 2 V bias and is a typical value. “UC” product is approximately 2x the listed
value.
• V
REF
maximum value for the negative Battrax is -200 V.
Surge Ratings
I
PP
2x10 µs
Amps
150
500
I
PP
8x20 µs
Amps
150
400
I
PP
10x160 µs
Amps
90
200
I
PP
10x560 µs
Amps
50
120
I
PP
10x1000 µs
Amps
45
100
I
TSM
60 Hz
Amps
20
50
di/dt
Amps/µs
500
500
Series
A
C
http://www.littelfuse.com
+1 972-580-7777
2 - 56
SIDACtor
®
© 2004 Littelfuse, Inc.
Data Book and Design Guide
Battrax Quad Negative SLIC Protector
Thermal Considerations
Package
Modified MS-013
6
5
4
1
2
Symbol
T
J
T
S
R
θJA
Parameter
Operating Junction Temperature Range
Storage Temperature Range
Thermal Resistance: Junction to Ambient
Value
-40 to +125
-65 to +150
60
Unit
°C
°C
°C/W
+I
I
T
I
GT
I
S
I
H
I
DRM
-V
-V
I
PP
– Peak Pulse Current – %I
PP
Positive Battrax
Characteristics
100
Peak
Value
t
r
= rise time to peak value
t
d
= decay time to half value
Waveform = t
r
x t
d
+V
+V
50
Half Value
V
T
V
DRM
DRM
V
S
V
S
Negative Battrax
Characteristics
-I
-I
V-I Characteristics
0
0
t
r
t
d
t – Time (µs)
t
r
x t
d
Pulse Wave-form
14
Percent of V
S
Change – %
12
8
6
4
2
0
-4
-6
-8
-40 -20 0 20 40 60 80 100 120 140 160
I
H
I
H
(T
C
= 25 ˚C)
10
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-40 -20 0
20 40 60 80 100 120 140 160
25 ˚C
25 ˚C
Ratio of
Case Temperature (T
C
) – ˚C
Junction Temperature (T
J
) – ˚C
Normalized V
S
Change versus Junction Temperature
Normalized DC Holding Current versus Case Temperature
© 2004 Littelfuse, Inc.
SIDACtor
®
Data Book and Design Guide
2 - 57
http://www.littelfuse.com
+1 972-580-7777
Data Sheets
3
DSP and ARM Processors
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