EEWORLDEEWORLDEEWORLD

Part Number

Search

B12V11492

Description
NPN LOW NOISE SILICON MICROWAVE TRANSISTOR
File Size35KB,7 Pages
ManufacturerETC1
Download Datasheet Compare View All

B12V11492 Overview

NPN LOW NOISE SILICON MICROWAVE TRANSISTOR

BIPOLARICS, INC.
Part Number B12V114
NPN LOW NOISE SILICON MICROWAVE TRANSISTOR
PRODUCT DATA SHEET
FEATURES:
DESCRIPTION AND APPLICATIONS:
Bipolarics' B12V114 is a high performance silicon bipolar
transistor intended for use in low noise applications at VHF,
UHF and microwave frequencies. These applications include
narrowband and wideband amplifiers, oscillators and
micropower transmitters. Typical applications include cellu-
lar telephone preamplifiers/mixers, CATV amplifiers and
Part 15 receivers and transmitters. Commercial plastic, sur-
face mount and hermetic (including Stripline) packaging
options make this device very versatile; from consumer prod-
uct to space flight.
High Gain Bandwidth Product
f = 10 GHz typ @ I
C
= 25mA
t
Low Noise Figure
1.4 dB typ at 1.0 GHz
1.7 dB typ at 2.0 GHz
High Gain
| S
21
|
2
=
16.9 dB @ 1.0 GHz
12.0 dB @ 2.0 GHz
Dice, Plastic, Hermetic and Surface
Mount packages available
Absolute Maximum Ratings:
SYMBOL
PARAMETERS
RATING
UNITS
V
CBO
V
CEO
V
EBO
I
C
T (1)
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Junction Temperature
Storage Temperature
20
12
1.5
60
200
-65 to 150
V
V
V
mA
o
C
o
C
PERFORMANCE DATA:
Electrical Characteristics (T
A
= 25
o
C)
SYMBOL
PARAMETERS & CONDITIONS
V
CE
= 8V, I
C
= 25 mA unless stated
(1) Depends on package
UNIT
MIN.
TYP.
MAX.
f
t
Gain Bandwidth Product
Insertion Power Gain:
f = 1.0 GHz
f = 2.0 GHz
f = 1.0 GHz
f = 1.0 GHz
GHz
dB
dB
dBm
dBm
10.0
16.9
12.0
18.0
15.0
|S
21
|
2
P
1d B
G
1d B
NF
h
FE
I
CBO
I
EBO
C
CB
Power output at 1dB compression:
Gain at 1dB compression:
Noise Figure: V
CE
= 8V, I
C
= 10mA
Forward Current Transfer Ratio:
V
CE
= 8V, I
C
=25 mA
Collector Cutoff Current : V
CB
= 8V
Emitter Cutoff Current : V
EB
= 1V
Collector Base Capacitance: V
CB
= 8V
f = 1.0 GHz
f = 1MHz
dB
30
1.4
150
300
µA
µA
f = 1MHz
pF
0.25
0.2
1.0

B12V11492 Related Products

B12V11492 B12V114 B12V11400 B12V11402 B12V11414 B12V11435
Description NPN LOW NOISE SILICON MICROWAVE TRANSISTOR NPN LOW NOISE SILICON MICROWAVE TRANSISTOR NPN LOW NOISE SILICON MICROWAVE TRANSISTOR NPN LOW NOISE SILICON MICROWAVE TRANSISTOR NPN LOW NOISE SILICON MICROWAVE TRANSISTOR NPN LOW NOISE SILICON MICROWAVE TRANSISTOR
Mother's Day is coming, what do you have to say?
[size=4]This Sunday is Mother's Day. I would like to wish all mothers in the world a happy holiday. Thank you for your hard work~[/size] [size=4] [/size] [size=4][/size] [size=4] [/size] [size=4]Have ...
okhxyyo Talking
[Help] I have a question about thread switching. Please help me. Thank you!!
Processor: BF518 Operating system: RT-Thread Two threads (tasks): operation processing and display and serial port communication (high priority)Problem description: The above two tasks are required to...
wqs9 Embedded System
Inspire inspiration and turn creativity into reality! Freescale MCU Creative Awards sincerely invites you to participate
The Freescale MCU Creative Grand Prix jointly organized by Freescale and China Electronics Equipment has officially started! The organizer will provide two development boards, one is the high-performa...
技术达人 NXP MCU
Analysis of CPU in embedded development
CPU is an important part of digital processing system. In my opinion, single-chip microcomputer, microprocessor and DSP can all be called CPU, but they have different focuses. Specifically, the tradit...
Jacktang Microcontroller MCU
Crying: What is wrong with the /case WM_SIZE: in my code? The program seems to run normally, but it prompts a shell32.exe error
Crying: What is the problem with the /case WM_SIZE: in my code? The program seems to run normally, but it prompts a shell32.exe error case WM_SIZE: //MoveWindow(g_hWnd, 40, 40, 100, 100, TRUE); Comple...
8444574 Embedded System
Four-tube buck-boost converter FSBB
In the four-tube buck-boost circuit, the inductor, as the core component of power conversion, is connected in series at the midpoint of the two half-bridge arms. The energy storage and release process...
tpduan Power technology

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 2412  2427  2089  675  324  49  43  14  7  46 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号