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B125-C1000

Description
SILICON BRIDGE RECTIFIERS
CategoryDiscrete semiconductor    diode   
File Size24KB,2 Pages
ManufacturerEIC [EIC discrete Semiconductors]
Environmental Compliance
Download Datasheet Parametric Compare View All

B125-C1000 Overview

SILICON BRIDGE RECTIFIERS

B125-C1000 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerEIC [EIC discrete Semiconductors]
Reach Compliance Codecompli
ECCN codeEAR99
ConfigurationBRIDGE, 4 ELEMENTS
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1.1 V
Maximum non-repetitive peak forward current40 A
Number of components4
Maximum operating temperature150 °C
Maximum output current1 A
Maximum repetitive peak reverse voltage250 V
surface mountNO
B40-B380/C1000
PRV : 100 - 900 Volts
Io : 1.0 Amperes
FEATURES :
*
*
*
*
*
*
High case dielectric strength
High surge current capability
High reliability
Low reverse current
Low forward voltage drop
Ideal for printed circuit board
SILICON BRIDGE RECTIFIERS
WOB
0.39 (10.0)
0.31 (7.87)
0.22 (5.59)
0.18 (4.57)
+
AC
-
1.00 (25.4)
MIN.
1.10 (27.9)
MIN.
0.034 (0.86)
0.028 (0.71)
MECHANICAL DATA :
* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated leads solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 1.29 grams
AC
+
-
AC
0.22 (5.59)
0.18 (4.57)
0.22 (5.59)
0.18 (4.57)
Dimension in inches and (millimeter)
Rating at 25
°
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Input Voltage R+C -Load
Maximum DC Blocking Voltage
Maximum Average Forward Current For
Free Air Operation at Tc = 45
°
C R+L -Load
C -Load
Peak Forward Surge Current Single half sine wave
on rated load (JEDEC Method) at T
J
= 125
°
C
Rating for fusing at T
J
= 125
°
C ( t < 100 ms.)
Maximum Series Resistor C-Load V
RMS
=
±
10%
Maximum load Capacitance
+ 50%
-10%
Maximum Forward Voltage per Diode at I
F
= 1.0 Amp.
Maximum Reverse Current at Rated Repetitive
Peak Voltage per Diode
Ta = 25
°
C
Typical Thermal Resistance (Note 1)
Operating Junction Temperature Range
Storage Temperature Range
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
B40-
C1000
100
40
100
B80-
C1000
200
80
200
B125-
C1000
300
125
300
1.2
1.0
B250-
C1000
600
250
600
B380-
C1000
900
380
900
UNIT
Volts
Volts
Volts
Amps.
I
FSM
I
t
R
t
C
L
V
F
I
R
R
θ
JA
T
J
T
STG
2
40
10
1.0
5000
2.0
2500
4.0
1000
1.0
10
36
- 50 to + 125
- 50 to + 125
8.0
500
12.0
200
Amps.
AS
µF
Volts
2
µ
A
°
C/W
°
C
°
C
Notes :
1 ) Thermal resistance from Junction to Ambient at 0.375" (9.5 mm) lead length P.C. Board with, 0.22" x 0.22" (5.5 x 5.5 mm)
copper Pads.
UPDATE : AUGUST 26,1998

B125-C1000 Related Products

B125-C1000 B250-C1000 B380-C1000 B40-C1000 B80-C1000
Description SILICON BRIDGE RECTIFIERS SILICON BRIDGE RECTIFIERS SILICON BRIDGE RECTIFIERS SILICON BRIDGE RECTIFIERS SILICON BRIDGE RECTIFIERS
Is it lead-free? Lead free - Lead free Lead free Lead free
Is it Rohs certified? conform to - conform to conform to conform to
Maker EIC [EIC discrete Semiconductors] - EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors]
Reach Compliance Code compli - compli compli compli
ECCN code EAR99 - EAR99 EAR99 EAR99
Configuration BRIDGE, 4 ELEMENTS - BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode type BRIDGE RECTIFIER DIODE - BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF) 1.1 V - 1.1 V 1.1 V 1.1 V
Maximum non-repetitive peak forward current 40 A - 40 A 40 A 40 A
Number of components 4 - 4 4 4
Maximum operating temperature 150 °C - 150 °C 150 °C 150 °C
Maximum output current 1 A - 1 A 1 A 1 A
Maximum repetitive peak reverse voltage 250 V - 800 V 80 V 160 V
surface mount NO - NO NO NO
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