B120/B - B160/B
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
Features
·
·
·
·
·
·
Guard Ring Die Construction for
Transient Protection
Ideally Suited for Automatic Assembly
Low Power Loss, High Efficiency
Surge Overload Rating to 30A Peak
For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Application
Plastic Material - UL Flammability
Classification 94V-0
B
SMA
Dim
A
B
C
D
E
G
H
J
Min
2.29
4.00
1.27
0.15
4.80
0.10
0.76
2.01
Max
2.92
4.60
1.63
0.31
5.59
0.20
1.52
2.62
SMB
Min
3.30
4.06
1.96
0.15
5.00
0.10
0.76
2.00
Max
3.94
4.57
2.21
0.31
5.59
0.20
1.52
2.62
A
C
D
J
Mechanical Data
·
·
·
·
·
Case: Molded Plastic
Terminals: Solder Plated Terminal -
Solderable per MIL-STD-202, Method 208
Polarity: Cathode Band or Cathode Notch
Approx. Weight: SMA 0.064 grams
SMB 0.093 grams
Marking: Type Number
H
G
E
All Dimensions in mm
No Suffix Designates SMA Package
“B” Suffix Designates SMB Package
Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
@ T
T
= 130°C
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
(JEDEC Method)
Forward Voltage
@ I
F
= 1.0A
Peak Reverse Current
at Rated DC Blocking Voltage
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance Junction to Terminal (Note 1)
Operating and Storage Temperature Range
@T
A
= 25°C
@ T
A
= 100°C
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
FSM
V
FM
I
RM
C
j
R
qJT
T
j,
T
STG
@ T
A
= 25°C unless otherwise specified
B120/B
20
14
B130/B
30
21
B140/B
40
28
1.0
30
B150/B
50
35
B160/B
60
42
Unit
V
V
A
A
0.50
0.5
10
110
20
-65 to +150
0.70
V
mA
pF
°C/W
°C
Notes:
1. Thermal Resistance: Junction to terminal, unit mounted on PC board with 5.0 mm
2
(0.013 mm thick) copper pads as heat sink.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.
DS13002 Rev. H-2
1 of 3
B120/B-B160/B
I
F
, INSTANTANEOUS FWD CURRENT (A)
10
T
A
= +125
°
C
I
O,
AVERAGE RECTIFIED CURRENT (A)
1.0
T
A
= +75
°
C
1.0
T
A
= +25
°
C
T
A
= -25
°
C
0.5
0
25
50
75
100
125
150
T
T
, TERMINAL TEMPERATURE (ºC)
Fig. 1 Forward Current Derating Curve
I
F
, INSTANTANEOUS FORWARD CURRENT (A)
10
0.1
I
F
Pulse Width = 300
m
s
0.2
0.4
0.6
0.8
1.0
1.2
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics - B120/B thru B140/B
40
I
FSM
, PEAK FORWARD SURGE CURRENT (A)
Single Half Sine-Wave
(JEDEC Method)
30
1.0
T
A
= +125ºC
T
A
= +25ºC
20
0.1
10
T
j
= 150ºC
0.01
0
0.2
0.4
I
F
Pulse Width = 300 ms
0
1
10
NUMBER OF CYCLES AT 60 Hz
Fig. 4 Max Non-Repetitive Peak Fwd Surge Current
100
0.6
0.8
1.0
V
F
, INSTANTANEOUS FWD VOLTAGE (V)
Fig. 3 Typ. Forward Characteristics - B150/B thru B160/B
T
j
= 25°C
f = 1 MHz
I
R
, INSTANTANEOUS REVERSE CURRENT (
m
A)
1000
10,000
1000
100
C
j
, JUNCTION CAPACITANCE (pF)
T
A
= +125
°
C
T
A
= +75
°
C
100
10
1
0.1
T
A
= +25
°
C
T
A
= -25
°
C
10
0.1
1
10
100
0.01
0
10
20
30
40
50
60
V
R
, INSTANTANEOUS REVERSE VOLTAGE (V)
Fig. 6 Typical Reverse Characteristics, B120/B thru B140/B
V
R
, REVERSE VOLTAGE (V)
Fig. 5 Typical Junction Capacitance
DS13002 Rev. H-2
2 of 3
B120/B-B160/B
MCU
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