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B1S

Description
BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size126KB,2 Pages
ManufacturerBytes
Download Datasheet Parametric Compare View All

B1S Overview

BRIDGE RECTIFIER DIODE

B1S Parametric

Parameter NameAttribute value
stateACTIVE
Diode typeBRIDGE RECTIFIER DIODE
B1S
THRU
B8S
MINI SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER
VOLTAGE RANGE
100 to 800 Volts
CURRENT
0.5 Ampere
FEATURES
* Ideal for printed circuit board
* Reliable low cost construction utilizing molded
plastic technique
* High surge current capability
* Polarity: marked on body
* Mounting position: Any
* Weight: 1.0 grams
SMDI/MB-S
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating 25 C ambient temperature uniess otherwies specified.
Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
TYPE NUMBER
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
See Fig. 2
Peak Forward Surge Current, 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Maximum Forward Voltage Drop per Bridge Element at 0.5A D.C.
Maximum DC Reverse Current
Ta=25 C
at Rated DC Blocking Voltage
Operating Temperature Range, T
J
Storage Temperature Range, T
STG
Ta=125 C
B1S
B2S
B4S
B6S
B8S
UNITS
100
70
100
200
140
200
400
280
400
600
420
600
800
560
800
V
V
V
0.5
50
1.0
10
500
-65 +125
-65 +150
A
A
V
µA
µA
C
C
246

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B1S B2S B4S B6S B8S
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