VISHAY
ZY3.6 to ZY200
Vishay Semiconductors
Zener Diodes
Features
• Silicon Power Zener Diodes.
• For use in stablilizing and clipping circuits with
high power rating.
• The Zener voltages are graded according to the
international E 24 standard. Smaller voltage toler-
ances are available upon request.
17173
Mechanical Data
Case:
DO-41 PLASTIC (DO-204AM)
molded plastic body
Weight:
approx. 340 mg
Packaging Codes/Options:
TR/ 5 k per 13 " reel (52 mm tape), 25 k/box
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Zener current (see table
"Characteristics"
Power dissipation
1)
Test condition
Symbol
Value
Unit
T
amb
= 25 °C
P
tot
2.0
1)
W
Valid provided that leads are kept at ambient temperature at a distance of 10 mm from case.
Thermal Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Thermal resistance junction to
ambient air
Junction temperature
Storage temperature
1)
Test condition
Symbol
R
thJA
T
j
T
S
Value
60
1)
150
- 55 to + 150
Unit
°C/W
°C
°C
Valid provided that leads are kept at ambient temperature at a distance of 10 mm from case.
Document Number 85791
Rev. 1.3, 07-Apr-04
www.vishay.com
1
ZY3.6 to ZY200
Vishay Semiconductors
Electrical Characteristics
Partnumber
Zener Voltage
2)
Dynamic
Resistance
r
zj
@ I
ZT
,
f = 1 kHz
V
max
3.8
4.1
4.6
5
5.4
6
6.6
7.2
7.9
8.7
9.6
0.6
12.7
14.1
15.8
17.1
19.1
21.2
23.3
25.6
28.9
32
35
38
41
46
50
54
60
66
72
79
88
96
106
116
127
141
156
171
191
212
Ω
max
7
7
7
7
5
2
2
2
2
2
4
4
7
10
10
15
15
15
15
15
15
15
15
40
40
45
45
60
60
80
80
100
100
200
200
250
250
300
300
350
350
350
100
100
100
100
100
100
100
100
100
100
50
50
50
50
50
25
25
25
25
25
25
25
25
10
10
10
10
10
10
10
10
10
10
5
5
5
5
5
5
5
5
5
Test
Current
I
ZT
mA
Temperature Coefficient
of Zener Voltage
α
VZ
@ I
ZT
10
-4
/°C
min
-7
-7
-7
-7
-6
-3
-1
0
0
3
3
5
5
5
5
6
6
6
6
6
6
6
6
6
6
7
7
7
7
8
8
8
8
9
9
9
9
9
9
9
9
9
10
-4
/°C
max
2
2
3
4
5
5
6
7
7
8
8
9
10
10
10
11
11
11
11
11
11
11
11
11
11
12
12
12
12
13
13
13
13
13
13
13
13
13
13
13
13
13
-
-
-
-
-
> 1.5
> 1.5
>2
>2
> 3.5
> 7.4
> 8.2
> 10
> 10.7
> 12
> 13.3
> 14.7
> 16.5
> 18.3
> 20.1
> 22.5
> 25.1
> 27.8
> 30.2
> 32.9
> 35.6
> 39.2
> 42.8
> 47.3
> 51.7
> 57.1
> 63.2
> 68.6
> 75.7
> 83.7
> 92.6
> 101.6
> 110.5
> 123
>136
> 149
> 167
Reverse
Voltage
V
R
@ I
R
=
1
µA
V
VISHAY
Admissible
Zener
Current
I
Z
@T
amb
=
25 °C
mA
440
410
360
330
300
275
245
220
200
180
165
145
120
110
98
90
80
72
66
60
53
48
44
40
37
33
30
27
25
21
20
18
16
15
13
12
11
10
9
8.5
8
7.5
V
Z
@ I
ZT
V
min
ZY3V6
ZY3V9
ZY4V3
ZY4V7
ZY5V1
ZY5V6
ZY6V2
ZY6V8
ZY7V5
ZY8V2
ZY9V1
ZY10
ZY12
ZY13
ZY15
ZY16
ZY18
ZY20
ZY22
ZY24
ZY27
ZY30
ZY33
ZY36
ZY39
ZY43
ZY47
ZY51
ZY56
ZY62
ZY68
ZY75
ZY82
ZY91
ZY100
ZY110
ZY120
ZY130
ZY150
ZY160
ZY180
ZY200
1)
2)
3)
3.4
3.7
4
4.4
4.8
5.2
5.8
6.4
7
7.7
8.5
9.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28
31
34
37
40
44
48
52
58
64
70
77
85
94
104
114
124
138
153
168
188
Valid provided that leads are kept at ambient temperature at a distance of 10 mm from case
Tested with pulses t
p
= 5 ms
The ZY1 is a silicon diode operated in forward direction. Hence, the index of all parameters ratings should be "F" instead of "Z". Connect
Document Number 85791
Rev. 1.3, 07-Apr-04
www.vishay.com
2
VISHAY
the cathode lead to the negative pole
ZY3.6 to ZY200
Vishay Semiconductors
Typical Characteristics
(T
amb
= 25
°C
unless otherwise specified)
18718
18730
Fig. 1 Admissible Power Dissipation vs. Ambient Temperature
Fig. 3 Dynamic Resistance vs. Zener Current
18719
18720
Fig. 2 Dynamic Resistance vs. Zener Current
Fig. 4 Dynamic Resistance vs. Zener Current
Document Number 85791
Rev. 1.3, 07-Apr-04
www.vishay.com
3
ZY3.6 to ZY200
Vishay Semiconductors
VISHAY
°C/W
°C
18721
18724
Fig. 5 Thermal Differential Resistance vs. Zener Voltage
Fig. 8 Pulse Thermal Resistance vs. Pulse Duration
°C
18722
18725
Fig. 6 Change of Zener voltage from turn-on up to the point of
thermal equilibrium vs. Zener voltage
Fig. 9 Thermal Resistance vs. Lead Length
18723
18726
Fig. 7 Relative Change of Zener Voltage vs. Turn-on Time
Fig. 10
∆V
Z
between V
Z
@I
ZTpulse
< 1 s and V
Z
@Ther. Equil.
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Document Number 85791
Rev. 1.3, 07-Apr-04
VISHAY
ZY3.6 to ZY200
Vishay Semiconductors
18727
Fig. 11
∆V
Z
between V
Z
@I
ZTpulse
< 1 s and V
Z
@Ther. Equil.
18728
Fig. 12
∆V
Z
between V
Z
@I
ZTpulse
< 1 s and V
Z
@Ther. Equil.
18729
Fig. 13
∆V
Z
between V
Z
@I
ZTpulse
< 1 s and V
Z
@Ther. Equil.
Document Number 85791
Rev. 1.3, 07-Apr-04
www.vishay.com
5
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