BSS138
Small Signal MOSFET
N-Channel
* “G” Lead(Pb)-Free
3
DRAIN
SOT-23
1
GATE
2
SOURCE
Features:
*Low On-Resistance : 3.5
Ω
*Low Input Capacitance: 40PF
*Low Out put Capacitance : 12PF
*Low Threshole :1 .5V
*Fast Switching Speed : 20ns
3
1
2
Application:
* DC to DC Converter
* Cellular & PCMCIA Card
* Cordless Telephone
* Power Management in Portable and Battery etc.
Maximum Ratings
(TA=25 C Unless Otherwise Specified)
Rating
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TA=25 C)
Pulsed Drain Current(tp 10us)
Power Dissipation (TA=25 C)
Maximax Junction-to-Ambient
Operating Junction and Storage
Temperature Range
Symbol
V
DSS
V
GS
I
D
I
DM
P
D
R
θ
JA
T
J
, Tstg
Value
50
_
+20
200
800
225
556
Unit
V
V
mA
mA
mW
C/W
C
-55 to 150
Device Marking
BSS138=J1
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BSS138
Electrical Characteristics
Characteristic
(TA=25 C Unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Static
(1)
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=250 A
Gate-Source Threshold Voltage
V
DS
=V
GS
, I
D
=1.0mA
Gate-Source Leakage Current
+
V
DS
=0V, V
GS
=
-
20V
Zero Gate Voltage Drain Current
V
DS
=25V, V
GS
=0V
V
DS
=50V, V
GS
=0V
Drain-Source On-Resistance
V
GS
=2.75V, I
D
<
200mA, TA=-40 C to + 85 C
V
GS
=5.0V, I
D
=200mA
Forward Transconductance
V
DS
=25V, I
D
=200mA, f=1.0KHZ
V
(BR)DSS
V
GS (th)
I
GSS
I
DSS
50
0.5
-
-
-
-
-
-
1.5
+
-
0.1
0.1
0.5
10
3.5
V
V
uA
A
-
r
DS (
on
)
g
fs
-
-
100
5.6
-
-
-
mS
Dynamic
Input Capacitance
V
DS
=25V, V
GS
=0V, f=1MHZ
Output Capacitance
V
DS
=25V, V
GS
=0V, f=1MHZ
Reverse Transfer Capacitance
V
DS
=25V, V
GS
=0V, f=1MHZ
C
iss
C
oss
C
rss
-
-
-
40
12
3.5
50
25
5.0
PF
Switching
(2)
Turn-On Time
V
DD
=30V, I
D
=200mA
Turn-Off Time
V
DD
=30V, I
D
=100mA
t
d
(
on
)
t
d(off)
-
-
-
20
nS
20
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BSS138
T Y P IC A L E L E C T R IC A L C HA R A C T E R IS T IC S
0.8
I D , DRAIN CURRENT (AMPS)
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
1
2
3
4
5
6
7
8
9
10
TJ = 25 C
VGS = 3.5 V
VGS = 3.25 V
VGS = 3.0 V
VGS = 2.75 V
VGS = 2.5 V
I D , DRAIN CURRENT (AMPS)
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
0.5
1
1.5
2
2.5
VDS = 10 V
WE IT R ON
25 C
-55 C
150 C
3
3.5
4
4.5
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
VGS , GATE-T O-SOURCE VOLTAGE (VOLTS)
F igure 1. On-R egion C harac teris tic s
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0.6
- 55
-5
45
95
145
0.75
- 55
-30
VGS = 4.5 V
ID = 0.5 A
VGS = 10 V
ID = 0.8 A
1.25
F igure 2. Trans fer C harac teris tic s
R DS(on), DRAIN-TO-SOURCE RESIST ANCE
(NORMALIZED)
ID = 1.0 mA
Vgs(th), VARIANCE (VOL
TS)
1.125
1
0.875
-5
20
45
70
95
120
145
TJ , JUNCTION TEMPERATURE ( C)
TJ , JUNCTION TEMPERA
TURE ( C)
F igure 3. On-R es is tanc e Variation with
Temperature
VGS , GATE-T O-SOURCE VOLTAGE (VOLTS)
10
F igure 4. T hres hold Voltage Variation
with Temperature
VDS = 40 V
TJ = 25 C
8
6
4
ID = 200 mA
2
0
0
500
1000
1500
2000
2500
3000
QT, TOTAL GATE CHARGE (pC)
F igure 5. G ate C harge
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BSS138
T Y P IC A L E L E C T R IC A L C HA R A C T E R IS T IC S
R DS(on), DRAIN-TO-SOURCE RESIST ANCE (OHMS)
10
9
8
7
6
5
4
3
2
1
0
0.05
0.1
0.15
0.2
0.25
-55 C
25 C
VGS = 2.5 V
R DS(on), DRAIN-TO-SOURCE RESIST ANCE (OHMS)
8
VGS = 2.75 V
7
6
5
4
3
2
1
0
0.05
0.1
WE IT R ON
150 C
150 C
25 C
-55 C
0.15
0.2
0.25
ID, DRAIN CURRENT (AMPS)
ID, DRAIN CURRENT (AMPS)
F igure 6. On-R es is tanc e vers us Drain C urrent
R DS(on), DRAIN-TO-SOURCE RESIST ANCE (OHMS)
R DS(on), DRAIN-TO-SOURCE RESIST ANCE (OHMS)
6
5.5
5
4.5
4
3.5
3
2.5
2
1.5
1
0
0.05
0.1
0.15
0.2
0.25 0.3
0.35
0.4
0.45
0.5
-55 C
25 C
4.5
4
3.5
3
2.5
2
1.5
1
F igure 7. On-R es is tanc e vers us Drain C urrent
VGS = 4.5 V
150 C
VGS = 10 V
150 C
25 C
-55 C
0
0.05
0.1
0.15
0.2
0.25 0.3
0.35
0.4
0.45 0.5
ID, DRAIN CURRENT (AMPS)
ID, DRAIN CURRENT (AMPS)
F igure 8. On-R es is tanc e vers us Drain C urrent
F igure 9. On-R es is tanc e vers us Drain C urrent
1
I D , DIODE CURRENT (AMPS)
120
100
0.1
TJ = 150 C
25 C
-55 C
80
60
0.01
Ciss
40
20
Coss
Crss
0
5
10
15
20
25
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2
0
VSD, DIODE FORWARD VOL
TAGE (VOLTS)
F igure 10. B ody Diode F orward Voltage
F igure 1 1.
C apac itanc e
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