AP70T03GH/J-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
▼
Simple Drive Requirement
▼
Low Gate Charge
▼
Fast Switching
▼
RoHS Compliant
G
S
D
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
BV
DSS
R
DS(ON)
I
D
30V
9mΩ
60A
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP70T03GJ)
are available for low-profile applications.
GD
S
TO-252(H)
G
D
S
TO-251(J)
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Rating
30
+20
60
43
195
53
0.36
-55 to 175
-55 to 175
Units
V
V
A
A
A
W
W/℃
℃
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)
3
Value
2.8
62.5
110
Units
℃/W
℃/W
℃/W
1
200810134
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
AP70T03GH/J-HF
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
ΔBV
DSS
/ΔT
j
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Test Conditions
V
GS
=0V, I
D
=250uA
Min.
30
-
-
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.03
-
-
-
35
-
-
-
17
5
10
13.5
8
105
22
9
245
170
Max. Units
-
-
9
18
3
-
1
250
+100
27
-
-
22
-
-
-
-
-
-
V
V/℃
mΩ
mΩ
V
S
uA
uA
nA
nC
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Breakdown Voltage Temperature Coefficient
Reference to 25℃, I
D
=1mA
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
Q
oss
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
V
GS
=10V, I
D
=33A
V
GS
=4.5V, I
D
=20A
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=33A
V
DS
=30V, V
GS
=0V
V
GS
= +20V, V
DS
=0V
I
D
=33A
V
DS
=20V
V
GS
=4.5V
V
DD
=15V,V
GS
=0V
V
DS
=15V
I
D
=33A
R
G
=3.3Ω,V
GS
=10V
R
D
=0.45Ω
V
GS
=0V
V
DS
=25V
f=1.0MHz
Gate Threshold Voltage
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Output Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Drain-Source Leakage Current (T
j
=125
o
C)
V
DS
=24V ,V
GS
=0V
1485 2400
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward On Voltage
2
Reverse Recovery Time
2
Reverse Recovery Charge
Test Conditions
I
S
=33A, V
GS
=0V
I
S
=20A, V
GS
=0V,
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
27
20
Max. Units
1.3
-
-
V
ns
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in
2
copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP70T03GH/J-HF
200
120
T
C
=25
o
C
I
D
, Drain Current (A)
150
10V
8.0V
I
D
, Drain Current (A)
90
T
C
=175
o
C
10V
8.0V
6.0V
6.0V
100
60
V
G
=4.0V
30
50
V
G
=4.0V
0
0.0
1.5
3.0
4.5
0
0.0
1.5
3.0
4.5
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
60
2
I
D
=20A
T
C
=25
℃
Normalized R
DS(ON)
1.6
I
D
=33A
V
G
=10V
40
R
DS(ON)
(m
Ω
)
1.2
20
0.8
0
0
4
8
12
16
0.4
-50
25
100
175
V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.5
1000
100
2
I
S
(A)
10
T
j
=175
o
C
T
j
=25
o
C
V
GS(th)
(V)
1.5
1.5
1
1
0.1
0
0.5
1
0.5
-50
25
100
175
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C )
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP70T03GH/J-HF
12
10000
f=1.0MHz
I
D
=33A
V
GS
, Gate to Source Voltage (V)
9
C (pF)
V
DS
=16V
V
DS
=20V
V
DS
=24V
6
C
iss
1000
3
C
oss
C
rss
0
0
5
10
15
20
25
30
100
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
1
100
10us
Normalized Thermal Response (R
thjc
)
Duty factor = 0.5
0.2
0.1
I
D
(A)
100us
10
0.1
0.05
0.02
0.01
Single Pulse
P
DM
1ms
T
C
=25
o
C
Single Pulse
1
0.1
1
10
t
T
Duty Factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
10ms
100ms
1s
DC
0.01
100
0.00001
0.0001
0.001
0.01
0.1
1
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
4.5V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
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