Pressure sensors
AEA xx.xx C32/2 F00 G08 N
Series/Type:
Ordering code:
Date:
Version:
Absolute pressure sensor die
2017-12-07
4
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Identification/Classification 1
Pressure sensors
(header 1 + top left bar):
Identification/Classification 2
AEA xx.xx C32/2 F00 G08 N
(header 2 + bottom left header bar):
Ordering code: (top right header bar)
Series/Type: (bottom right header bar)
Absolute pressure sensor die
Preliminary data (optional):
Department:
BL TPS PS PD SD
Date:
2017-12-07
Version:
4
EPCOS AG 2017. Reproduction, publication and dissemination of this publication, enclosures hereto and the information
contained therein without EPCOS' prior express consent is prohibited.
EPCOS AG is a TDK Group Company.
Pressure sensors
AEA xx.xx C32/2 F00 G08 N
Absolute pressure sensor die
Applications
Medical devices
Automotive
Automation
Features
Piezoresistive MEMS technology
Small dimensions: 1.65 × 1.65 mm
Square diaphragm
Absolute pressure measuring
Measured media (front side):
Non-aggressive gases and fluids.
Wheatstone bridge with mV output,
ratiometric to supply voltage
Rated pressure ranges 1.6 up to 40 bar
Outstanding long-term stability
Delivery mode
Tray
Dimensional drawings
1650±100
713
713
300±5
800±20
typ. 20 Note1
125
125
X11
X10
X5
713
1650±100
X1
613
X10
193
allowable edge disruptions
80 µm max.
electrical diagram:
p
713
X10
613
Note1
X2
50±25
X10
X11
X4
X1 : Vout-
X2 : Vin-
X5
48
X4 : Vout+
X5 : Vin+
R2
X1
R4
308
713
Si 100
Note1: geometry of diaphragm depend on
specification
all dimensions in µm
glass
BOROFLOAT
TM
R1
X4
R3
X10: substrate
X11: shield
713
X2
BL TPS PS PD SD
Please read
Cautions and warnings
and
Important notes
at the end of this document.
Page 2 of 9
2017-12-07
Pressure sensors
AEA xx.xx C32/2 F00 G08 N
Absolute pressure sensor die
Technical data
Absolute maximum ratings
Parameter
Supply voltage
Maximum supply soltage
Temperature ranges
2)
Symbol
Conditions
Min.
Typ.
Max.
Unit
V
DD
Without damage
1)
10
V
–40
–40
–40
135
140
150
°C
°C
°C
Operating temperature range
Storage temperature range
Pressure ranges
Operating pressure ranges
Over pressure
Burst pressure
T
a
T
st
For t <15 min
3)
p
r
p
ov
p
burst
Absolute pressure
Absolute pressure
Absolute pressure
4)
5)
6)
1.6
3
5
25
bar
p
r
p
r
Electrical specifications
Parameter
Electrostatic discharge
Supply voltage / bridge resistance
Operating supply voltage
Total bridge resistance
Temperature coefficient
of total bridge resistance
Output signal @ V
DD
= 5 V
Offset
Sensitivity
Temperature coefficient
of offset
Temperature coefficient
of the sensitivity
Pressure hysteresis
V
o
S
TCVo+
Unglued
TCVo-
S
S
pHys
@ 25 °C
16)
15)
Symbol
Conditions
HBM
(AEC-Q100-002-REV-D)
Min.
1000
Typ.
Max.
Unit
V
V
DD
R
b
Rb
Rb
7)
1.0
8)
5.0
3.3
2.3
5
4.0
2.7
8
V
k
10 /K
10 /K
–6
–3
@ 25 °C
@ 25 °C
2.6
2.0
0
9)
@ 25 °C
@ 25 °C
10)
13)
-30
See next table
See next table
See next table
–2.5
0
–0.1
–2.2
5
30
mV
mV/bar
µV/V/K
µV/V/K
–3
–6
11)
–1.9
8
0.1
10 /K
10 /K
% FS
2
Long-term stability (Full scale normal output FSON = 120 mV)
Temperature hysteresis of offset
Temperature cycle drift of offset
High temperature drift of offset
Long term stability of offset
THV
0
TCDV
0
HTDV
0
LTSV
0
17)
17)
17)
17)
–0.2
–0.1
–0.25
–0.3
±0.1
±0.05
±0.05
±0.1
0.2
0.1
0.25
0.3
% FSON
% FSON
% FSON
% FSON
BL TPS PS PD SD
Please read
Cautions and warnings
and
Important notes
at the end of this document.
Page 3 of 9
2017-12-07
Pressure sensors
AEA xx.xx C32/2 F00 G08 N
Absolute pressure sensor die
Symbols and Terms
1)
2)
3)
4)
5)
6)
7)
Maximum power supply V
DD
This is the maximal allowed voltage, which may be applied to the piezoresistive bridge circuit without damage.
Operating temperature range T
a
This is the operating Temperature range T
a,min
to T
a,max
. Because most of the sensor parameters depend on assembling
conditions like gluing, wire bonding etc, the die has to be tested over the operating temperature range by the customer
fully assembled. For design verification and process control samples, mounted on TO39 base are tested over the
temperature range of T
min
to T
max
.
Storage temperature range T
st
If the pressure sensor dies are stored in the temperature range T
st,min
to T
st,max
without applied voltage power supply, this
will not affect the performance of the pressure sensor dies.
Operating pressure range p
r
In the operating pressure range 0 to p
r,max
the pressure sensor die output characteristic is as defined in this specification.
Over pressure p
OV
Pressure cycles in the pressure range 0 to p
ov
do not affect the performance of the pressure sensor dies.
Burst pressure p
burst
Up to the burst pressure p
burst
the diaphragm of the sensor die will not be destroyed mechanically. This parameter is
tested at room temperature on samples mounted on an aluminium socket by applying the specified burst pressure for
30 seconds. The evaluation of this test is done by optical inspection of the diaphragm. Since the burst pressure depends
on several assembling conditions, this parameter has to be verified by the customer with his assembling possibilities.
Operating power supply V
DD
The pressure sensor parameters are defined for a power supply voltage of V
DD
= 5 V. In the operating power supply
voltage range V
DD,min
to V
DD,max
the ratiometric parameters r(V
DD
) like sensitivity, offset voltage and the temperature
coefficient of the offset voltage are defined by:
r(V
DD
) = r(5[V])
8)
V
DD
5[V]
Total bridge resistance R
b
The total bridge resistance is defined between pad X5 and X2, (see the dimensional drawing in this data sheet) of the
closed piezoresistive bridge circuit. The total bridge resistance is in a good approximation the output impedance of the
piezoresistive bridge circuit. This parameter is tested completely on a wafer (wafer level test measurement).
Temperature coefficients of resistance
Rb
and
Rb
:
The temperature coefficients of resistance are tested for design verification on samples, mounted on a TO39 base over
the temperature range T
min
to T
max
with T
R
= 25 °C.
The temperature coefficients of first and second order are defined with the polynomial:
9)
R
b
(T) = R
b
(T = 25°C)[1 + α
Rb
(T − 25°C) + β
Rb
(T − 25°C)
2
]
10)
11)
The coefficients
Rb
and
Rb
are calculated using the three measurement points of R
b
(T) at T
meas,min
, T
R
and T
meas,max
.
Offset voltage V
0
The offset voltage V
0
is the output voltage V
out
(p = 0 bar abs) at zero absolute pressure and for a bridge voltage power
supply V
DD
= 5 V. Before anodic glass bonding the offset voltage is tested completely on a wafer (wafer level test
measurement) with limits –25 mV< V
o
< 25 mV.
For design verification V
0
is measured on samples, mounted on a TO39 base by extrapolating the output characteristic
to zero bar. Since the offset voltage depends on several assembling conditions, this parameter has to be verified by the
customer with his assembling possibilities.
Temperature coefficients of offset voltage TCV
0
The temperature coefficients of offset voltage are defined for a bridge voltage power supply V
DD
= 5 V.
These parameters strongly depend on assembly conditions like gluing, wire bonding etc.
The temperature coefficients of offset voltage are tested for design verification on samples, mounted on a TO39 over the
temperature range T
min
to T
max
. Therefore TCV
0+
and TCV
0-
are defined for the measurement temperature range by:
TCVo
+
=
V
o
(T
max
)−V
o
(25°C)
T
max
−25°C
TCVo
−
=
V
o
(T
min
)−V
o
(25°C)
T
min
−25°C
Since the TCV
0
depends on several assembling conditions, this parameter has to be verified by the customer with his
assembling possibilities.
BL TPS PS PD SD
Please read
Cautions and warnings
and
Important notes
at the end of this document.
Page 5 of 9
2017-12-07
51mcu
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