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BLS6G2731S-130

Description
SILICON, VHF BAND, MIXER DIODE
CategoryDiscrete semiconductor    The transistor   
File Size10MB,130 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
Download Datasheet Parametric View All

BLS6G2731S-130 Overview

SILICON, VHF BAND, MIXER DIODE

BLS6G2731S-130 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerNXP
package instructionFLATPACK, R-CDFP-F2
Contacts2
Reach Compliance Codeunknow
ECCN codeEAR99
Shell connectionSOURCE
ConfigurationSINGLE
Minimum drain-source breakdown voltage60 V
Maximum drain current (ID)33 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
highest frequency bandS BAND
JESD-30 codeR-CDFP-F2
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature200 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formFLATPACK
Peak Reflow Temperature (Celsius)280
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperature30
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
RF Manual 16 edition
th
Application and design manual
for High Performance RF products
June 2012

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Index Files: 1488  807  2269  897  582  30  17  46  19  12 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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