BIPOLARICS, INC
Part Number BMT1417B26
SILICON MICROWAVE POWER TRANSISTOR
PRODUCT DATA SHEET
FEATURES:
•
Common Base, Class C Package Configuration
•
High Output Power
26 W @ 1.4 to 1.7 GHz
•
High Gain Bandwidth Product
f = 6.0 GHz @ I
C
= 4.16 A
t
•
High Gain
G
PE
= 7.0 dB to 8.2 dB
•
High Reliability
Gold Metallization
Nitride Passivation
•
Diffused Ballast Resistors
•
BeO Packaging
•
Built-In Matching Network
Absolute Maximum Ratings:
SYMBOL
PARAMETERS
RATING
UNITS
V
CBO
V
CEO
V
EBO
I
C
T
J
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (instantaneous)
Junction Temperature
Storage Temperature
Thermal Resistance
50
28
3.5
4.16
200
-65 to 200
6.5
V
V
V
A
o
o
for Broadband Operation
PERFORMANCE DATA:
•
Electrical Characteristics (T
A
= 25
o
C)
SYMBOL
PARAMETERS & CONDITIONS
V
CE
=28V, I
C
=4.16 A, Class C
C
T
STG
C
θ
JC
C/W
UNIT
MIN.
TYP.
MAX.
P
1dB
Power output at 1 dB compression:
f = 1.4 GHz
W
26
η
h
FE
Collector Efficiency
Class C
%
50
Forward Current Transfer Ratio: V
CB
= 5V, I
C
= 800 mA
10
---
100
C
OB
Output Capacitance:
f = 1 MHz, I
E
= 0
pF
24
P
T
Total Power Dissipation
W
52
PAGE
5
BIPOLARICS, INC.
Part Number BMT1417B26
SILICON MICROWAVE POWER TRANSISTOR
25 Package: 0.250" 2 Lead Flange
NOTES:
(unless otherwise specified)
in
1. Dimensions are
(mm)
2. Tolerances:
in .xxx =
±
.005
mm .xx =
±
.13
3. All dimensions nominal; subject to change
without notice
LEAD
25 Package
1
Emitter
2
Base
3
Collector
4
Base
BIPOLARICS, INC.
602 Charcot Ave.
San Jose, CA 95131
Phone: (408) 456-0430 FAX: (408) 456-0431
京公网安备 11010802033920号
EEWORLD
