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B40C120

Description
40 A, 1200 V, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size339KB,6 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric View All

B40C120 Overview

40 A, 1200 V, SILICON, RECTIFIER DIODE

B40C120 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerInternational Rectifier ( Infineon )
Parts packaging codeMODULE
package instructionR-PUFM-X3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresUL RECOGNIZED
applicationPOWER
Shell connectionISOLATED
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.31 V
JESD-30 codeR-PUFM-X3
JESD-609 codee0
Maximum non-repetitive peak forward current685 A
Number of components2
Phase1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-40 °C
Maximum output current40 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage1200 V
Maximum reverse current50 µA
surface mountNO
Terminal surfaceTIN LEAD
Terminal formUNSPECIFIED
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
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