Data Sheet
500 mW SURFACE MOUNT
EPITAXIAL PLANAR DIODE
Mechanical Dimensions
a 2.0
unit=mm
b 1.2
+- .1mm
c 1.2
d 0.5
e 1.0
f 1.0
g 0.4
1 Termination-Gold Plated on Nickel
2 Cathode Band
Features
n
PLANAR PROCESS
n
500 mW POWER DISSIPATION
n
LOW COST LOW PROFILE
PACKAGE
n
MEETS UL SPECIFICATION 94V-0
BPSM4148
Units
Volts
Volts
mAmps
mAmps
mW
°C
°C
Volts
µAmps
MHz
pF
ns
Maximum Ratings
Peak Reverse Voltage...V
RM
RMS Reverse Voltage...V
R(rms)
Average Forward Rectified Current...I
O
Non-Repetitive Peak Forward Surge Current...I
FSM
Power Dissipation...P
D
Operating Temperature Range...T
J
Storage Temperature Range...T
STRG
Electrical Characteristics
Maximum Forward Voltage...V
F
@ I
F
= 100 mA
Maximum DC Reverse Current...I
R
@ V
R
= 75v
Maximum Frequency...f
Maximum Diode Capacitance...C
D
Maximum Reverse Recovery Time...T
RR
.01 uF
P
VV
= 100nS
5K Ohms
50 Ohms
R
G
= 50 Ohms
BPSM4148
100
75
............................................. 150 ...............................................
............................................. 500 ...............................................
............................................. 500 ...............................................
......................................... -25 to 85 ..........................................
......................................... -55 to 165 ..........................................
............................................. 1.0 ...............................................
............................................. 5.0 ...............................................
............................................. 100 ...............................................
............................................. 4.0 ...............................................
............................................. 4.0 ...............................................
Test
Device Under Test
I
F
I
R
Output
Trr
0.1 I
R
BPSM4448
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