BPV23F(L)
Vishay Telefunken
Silicon PIN Photodiode
Description
BPV23F(L) is a high speed and high sensitive PIN
photodiode in a plastic package with a spherical side
view lens. The epoxy package itself is an IR filter,
spectrally matched to GaAs or GaAs/GaAlAs IR emit-
ters (
l
p
= 950 nm)
Lens radius and chip position are perfectly matched to
the chip size, giving high sensitivity without compro-
mising the viewing angle.
In comparison with flat packages the lens package
achieves a sensitivity improvement of 80%.
Features
D
D
D
D
D
D
D
D
Large radiant sensitive area (A = 5.7
Wide viewing angle
ϕ
=
±
60
°
Improved sensitivity
Fast response times
Low junction capacitance
Plastic package with IR filter
Filter designed for 950 nm transmission
Option ”L”: long lead package optional available
with suffix ”L”; e.g.: BPV23FL
mm
2
)
94 8633
Applications
Infrared remote control and free air transmission systems in combination with IR emitter diodes
(TSU...– or TSI...–Series).
Absolute Maximum Ratings
T
amb
= 25
_
C
Parameter
Reverse Voltage
Power Dissipation
Junction Temperature
Operating Temperature Range
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/Ambient
Test Conditions
T
amb
Symbol
V
R
P
V
T
j
T
amb
T
stg
T
sd
R
thJA
Value
60
215
100
–55...+100
–55...+100
260
350
Unit
V
mW
°
C
°
C
°
C
°
C
K/W
x
25
°
C
t
x
5s
Document Number 81510
Rev. 3, 16-Nov-99
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BPV23F(L)
Vishay Telefunken
Basic Characteristics
T
amb
= 25
_
C
Parameter
Forward Voltage
Breakdown Voltage
Reverse Dark Current
Diode Capacitance
Serial Resistance
Open Circuit Voltage
Temp. Coefficient of V
o
Short Circuit Current
Reverse Light Current
Temp. Coefficient of I
ra
Absolute Spectral Sensitivity
y
Test Conditions
I
F
= 50 mA
I
R
= 100
m
A, E = 0
V
R
= 10 V, E = 0
V
R
= 0 V, f = 1 MHz, E = 0
V
R
= 12 V, f = 1 MHz
E
e
= 1 mW/cm
2
,
l
= 950 nm
E
e
= 1 mW/cm
2
,
l
= 950 nm
E
e
= 1 mW/cm
2
,
l
= 950 nm
E
e
= 1 mW/cm
2
,
l
= 950 nm, V
R
= 5 V
E
e
= 1 mW/cm
2
,
l
= 950 nm, V
R
= 10 V
V
R
= 5 V,
l
= 870 nm
V
R
= 5 V,
l
= 950 nm
Symbol
V
F
V
(BR)
I
ro
C
D
R
S
V
o
TK
Vo
I
k
I
ra
TK
Ira
s(
l
)
s(
l
)
ϕ
Min
60
2
48
900
390
–2.6
60
63
0.2
0.35
0.6
±60
950
870...1050
90
4x10
–14
5x10
12
70
70
4
1
30
Typ
1
Max
1.3
Unit
V
V
nA
pF
W
45
mV
mV/K
m
A
m
A
%/K
A/W
A/W
deg
nm
nm
%
W/√ Hz
cm√Hz/
W
ns
ns
MHz
MHz
Angle of Half Sensitivity
Wavelength of Peak Sensitivity
Range of Spectral Bandwidth
Quantum Efficiency
l
= 950 nm
Noise Equivalent Power
V
R
= 10 V,
l
= 950 nm
Detectivity
V
R
= 10 V,
l
= 950 nm
Rise Time
Fall Time
Cut–Off Frequency
V
R
= 10 V, R
L
= 1k
W
,
l
= 820 nm
V
R
= 10 V, R
L
= 1k
W
,
l
= 820 nm
V
R
= 12 V, R
L
= 1k
W
,
l
= 870 nm
V
R
= 12 V, R
L
= 1k
W
,
l
= 950 nm
l
p
l
0.5
h
t
r
t
f
f
c
f
c
NEP
D
*
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Document Number 81510
Rev. 3, 16-Nov-99
BPV23F(L)
Vishay Telefunken
Typical Characteristics
(T
amb
= 25
_
C unless otherwise specified)
1000
I
ra
– Reverse Light Current (
m
A )
I
ro
– Reverse Dark Current ( nA )
100
1 mW/cm
2
0.5 mW/cm
2
l
=950nm
100
0.2 mW/cm
2
0.1 mW/cm
2
0.05 mW/cm
2
10
10
V
R
=10V
1
20
40
60
80
100
0.02 mW/cm
2
1
0.1
94 8425
1
10
100
94 8403
T
amb
– Ambient Temperature (
°C
)
V
R
– Reverse Voltage ( V )
Figure 1. Reverse Dark Current vs. Ambient Temperature
I
ra rel
– Relative Reverse Light Current
1.4
Figure 4. Reverse Light Current vs. Reverse Voltage
80
C
D
– Diode Capacitance ( pF )
1.2
V
R
=5V
l
=950nm
60
E=0
f=1MHz
1.0
40
0.8
20
0.6
0
94 8409
0
20
40
60
80
100
94 8423
0.1
1
10
100
T
amb
– Ambient Temperature (
°C
)
V
R
– Reverse Voltage ( V )
Figure 2. Relative Reverse Light Current vs.
Ambient Temperature
1000
I
ra
– Reverse Light Current (
m
A )
Figure 5. Diode Capacitance vs. Reverse Voltage
S (
l
)
rel
– Relative Spectral Sensitivity
10
94 8408
1.2
1.0
0.8
0.6
0.4
0.2
0
750
100
10
1
V
R
=5V
l
=950nm
0.1
0.01
94 8424
0.1
1
850
950
1050
1150
E
e
– Irradiance ( mW / cm
2
)
l
– Wavelength ( nm )
Figure 3. Reverse Light Current vs. Irradiance
Figure 6. Relative Spectral Sensitivity vs. Wavelength
Document Number 81510
Rev. 3, 16-Nov-99
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