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BR24L64FV-WE2

Description
256 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8
Categorystorage   
File Size616KB,36 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Download Datasheet Parametric View All

BR24L64FV-WE2 Overview

256 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8

BR24L64FV-WE2 Parametric

Parameter NameAttribute value
Number of functions1
Number of terminals8
Maximum operating temperature85 Cel
Minimum operating temperature-40 Cel
Maximum supply/operating voltage5.5 V
Minimum supply/operating voltage1.7 V
Rated supply voltage2.5 V
maximum clock frequency0.4000 MHz
Processing package descriptionROHS COMPLIANT, SSOP-8
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
packaging shapeRECTANGULAR
Package SizeSMALL OUTLINE, LOW PROFILE, SHRINK PITCH
surface mountYes
Terminal formGULL WING
Terminal spacing0.6500 mm
terminal coatingTIN COPPER
Terminal locationDUAL
Packaging MaterialsPLASTIC/EPOXY
Temperature levelINDUSTRIAL
memory width8
organize256 X 8
storage density2048 deg
operating modeSYNCHRONOUS
Number of digits256 words
Number of digits256
Memory IC typeI2C/2-WIRE SERIAL EEPROM
serial parallelSERIAL
Maximum TWC of write cycle5 ms
Datasheet
Serial EEPROM series Standard EEPROM
I
2
C BUS EEPROM (2-Wire)
BR24Sxxx-W
(8K 16K 32K 64K 128K 256K)
●General
Description
2
BR24Sxxx-W is a serial EEPROM of I C BUS interface method
●Features
2
Completely conforming to the world standard I C
BUS.
All controls available by 2 ports of serial clock
(SCL) and serial data (SDA)
Other devices than EEPROM can be connected to
the same port, saving microcontroller port
1.7V to 5.5V single power source action most suitable
for battery use
FAST MODE 400kHz at 1.7V to 5.5V
Page write mode useful for initial value write at
factory shipment
Highly reliable connection by Au pad and Au wire
Auto erase and auto end function at data rewrite
Low current consumption
At write operation (5V)
: 0.5mA (Typ.)
At read operation (5V)
: 0.2mA (Typ.)
At standby operation (5V) : 0.1μA (Typ.)
Write mistake prevention function
Write (write protect) function added
Write mistake prevention function at low voltage
Data rewrite up to 1,000,000 times
Data kept for 40 years
Noise filter built in SCL / SDA terminal
Shipment data all address FFh
●Packages
W(Typ.) x D(Typ.) x H(Max.)
SOP8
5.00mm x 6.20mm x 1.71mm
TSSOP-B8
3.00mm x 6.40mm x 1.20mm
SOP- J8
4.90mm x 6.00mm x 1.65mm
TSSOP-B8J
3.00mm x 4.90mm x 1.10mm
SSOP-B8
3.00mm x 6.40mm x 1.35mm
MSOP8
2.90mm x 4.00mm x 0.90mm
VSON008X2030
2.00mm x 3.00mm x 0.60mm
●Page
write
Number of pages
Product number
●BR24Sxxx-W
Capacity
8Kbit
16Kbit
32Kbit
64Kbit
128Kbit
256Kbit
Bit
format
1K×8
2K×8
4K×8
8K×8
16K×8
32K×8
Type
BR24S08-W
BR24S16-W
BR24S32-W
BR24S64-W
16Byte
BR24S08-W
BR24S16-W
32Byte
BR24S32-W
BR24S64-W
64Byte
BR24S128-W
BR24S256-W
Power source
voltage
1.7V
to
5.5V
1.7V
to
5.5V
1.7V
to
5.5V
1.7V
to
5.5V
1.7V
to
5.5V
1.7V
to
5.5V
SOP8
SOP-J8
SSOP-B8 TSSOP-B8
MSOP8
TSSOP-B8J
VSON008
X2030
BR24S128-W
BR24S256-W
○Product
structure:Silicon monolithic integrated circuit
www.rohm.com
©2012 ROHM Co., Ltd. All rights reserved.
TSZ22111½14½001
○This
product is not designed protection against radioactive rays
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