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BR24S02F-WE2

Description
256 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8
Categorystorage    storage   
File Size616KB,36 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Download Datasheet Parametric View All

BR24S02F-WE2 Overview

256 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8

BR24S02F-WE2 Parametric

Parameter NameAttribute value
MakerROHM Semiconductor
Parts packaging codeSOIC
package instructionROHS COMPLIANT, SOP-8
Contacts8
Reach Compliance Codecompli
ECCN codeEAR99
Maximum clock frequency (fCLK)0.4 MHz
JESD-30 codeR-PDSO-G8
length5 mm
memory density2048 bi
Memory IC TypeEEPROM
memory width8
Number of functions1
Number of terminals8
word count256 words
character code256
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize256X8
Package body materialPLASTIC/EPOXY
encapsulated codeSOP
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Parallel/SerialSERIAL
Certification statusNot Qualified
Maximum seat height1.78 mm
Serial bus typeI2C
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)1.8 V
Nominal supply voltage (Vsup)2.5 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal formGULL WING
Terminal pitch1.27 mm
Terminal locationDUAL
width4.4 mm
Maximum write cycle time (tWC)5 ms
Datasheet
Serial EEPROM series Standard EEPROM
I
2
C BUS EEPROM (2-Wire)
BR24Sxxx-W
(8K 16K 32K 64K 128K 256K)
●General
Description
2
BR24Sxxx-W is a serial EEPROM of I C BUS interface method
●Features
2
Completely conforming to the world standard I C
BUS.
All controls available by 2 ports of serial clock
(SCL) and serial data (SDA)
Other devices than EEPROM can be connected to
the same port, saving microcontroller port
1.7V to 5.5V single power source action most suitable
for battery use
FAST MODE 400kHz at 1.7V to 5.5V
Page write mode useful for initial value write at
factory shipment
Highly reliable connection by Au pad and Au wire
Auto erase and auto end function at data rewrite
Low current consumption
At write operation (5V)
: 0.5mA (Typ.)
At read operation (5V)
: 0.2mA (Typ.)
At standby operation (5V) : 0.1μA (Typ.)
Write mistake prevention function
Write (write protect) function added
Write mistake prevention function at low voltage
Data rewrite up to 1,000,000 times
Data kept for 40 years
Noise filter built in SCL / SDA terminal
Shipment data all address FFh
●Packages
W(Typ.) x D(Typ.) x H(Max.)
SOP8
5.00mm x 6.20mm x 1.71mm
TSSOP-B8
3.00mm x 6.40mm x 1.20mm
SOP- J8
4.90mm x 6.00mm x 1.65mm
TSSOP-B8J
3.00mm x 4.90mm x 1.10mm
SSOP-B8
3.00mm x 6.40mm x 1.35mm
MSOP8
2.90mm x 4.00mm x 0.90mm
VSON008X2030
2.00mm x 3.00mm x 0.60mm
●Page
write
Number of pages
Product number
●BR24Sxxx-W
Capacity
8Kbit
16Kbit
32Kbit
64Kbit
128Kbit
256Kbit
Bit
format
1K×8
2K×8
4K×8
8K×8
16K×8
32K×8
Type
BR24S08-W
BR24S16-W
BR24S32-W
BR24S64-W
16Byte
BR24S08-W
BR24S16-W
32Byte
BR24S32-W
BR24S64-W
64Byte
BR24S128-W
BR24S256-W
Power source
voltage
1.7V
to
5.5V
1.7V
to
5.5V
1.7V
to
5.5V
1.7V
to
5.5V
1.7V
to
5.5V
1.7V
to
5.5V
SOP8
SOP-J8
SSOP-B8 TSSOP-B8
MSOP8
TSSOP-B8J
VSON008
X2030
BR24S128-W
BR24S256-W
○Product
structure:Silicon monolithic integrated circuit
www.rohm.com
©2012 ROHM Co., Ltd. All rights reserved.
TSZ22111½14½001
○This
product is not designed protection against radioactive rays
1/33
TSZ02201-0R2R0G100320-1-2
20.AUG.2012 Rev.001
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