BR24S16FV-WTR datasheet, PDF - EEWORLD Datasheet

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BR24S16FV-WTR: Description256 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8; Categorystorage storage; File Size616KB，36 Pages; ManufacturerROHM Semiconductor; Websitehttps://www.rohm.com/

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BR24S16FV-WTR Overview

256 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8

BR24S16FV-WTR Parametric

Parameter Name	Attribute value
Parts packaging code	SOIC
package instruction	LSSOP,
Contacts	8
Reach Compliance Code	compli
ECCN code	EAR99
Is Samacsys	N
Maximum clock frequency (fCLK)	0.4 MHz
JESD-30 code	R-PDSO-G8
length	4.4 mm
memory density	16384 bi
Memory IC Type	EEPROM
memory width	8
Number of functions	1
Number of terminals	8
word count	2048 words
character code	2000
Operating mode	SYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	2KX8
Package body material	PLASTIC/EPOXY
encapsulated code	LSSOP
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH
Parallel/Serial	SERIAL
Certification status	Not Qualified
Maximum seat height	1.5 mm
Serial bus type	I2C
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	1.8 V
Nominal supply voltage (Vsup)	2.5 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal form	GULL WING
Terminal pitch	0.65 mm
Terminal location	DUAL
width	3 mm
Maximum write cycle time (tWC)	5 ms
Base Number Matches	1

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Datasheet

Serial EEPROM series Standard EEPROM

C BUS EEPROM (2-Wire)

BR24Sxxx-W

(8K 16K 32K 64K 128K 256K)

●General

Description

BR24Sxxx-W is a serial EEPROM of I C BUS interface method

●Features

Completely conforming to the world standard I C

BUS.

All controls available by 2 ports of serial clock

(SCL) and serial data (SDA)

Other devices than EEPROM can be connected to

the same port, saving microcontroller port

1.7V to 5.5V single power source action most suitable

for battery use

FAST MODE 400kHz at 1.7V to 5.5V

Page write mode useful for initial value write at

factory shipment

Highly reliable connection by Au pad and Au wire

Auto erase and auto end function at data rewrite

Low current consumption

At write operation (5V)

: 0.5mA (Typ.)

At read operation (5V)

: 0.2mA (Typ.)

At standby operation (5V) : 0.1μA (Typ.)

Write mistake prevention function

Write (write protect) function added

Write mistake prevention function at low voltage

Data rewrite up to 1,000,000 times

Data kept for 40 years

Noise filter built in SCL / SDA terminal

Shipment data all address FFh

●Packages

W(Typ.) x D(Typ.) x H(Max.)

SOP8

5.00mm x 6.20mm x 1.71mm

TSSOP-B8

3.00mm x 6.40mm x 1.20mm

SOP- J8

4.90mm x 6.00mm x 1.65mm

TSSOP-B8J

3.00mm x 4.90mm x 1.10mm

SSOP-B8

3.00mm x 6.40mm x 1.35mm

MSOP8

2.90mm x 4.00mm x 0.90mm

VSON008X2030

2.00mm x 3.00mm x 0.60mm

●Page

write

Number of pages

Product number

●BR24Sxxx-W

Capacity

8Kbit

16Kbit

32Kbit

64Kbit

128Kbit

256Kbit

Bit

format

1K×8

2K×8

4K×8

8K×8

16K×8

32K×8

Type

BR24S08-W

BR24S16-W

BR24S32-W

BR24S64-W

16Byte

BR24S08-W

BR24S16-W

32Byte

BR24S32-W

BR24S64-W

64Byte

BR24S128-W

BR24S256-W

Power source

voltage

1.7V

5.5V

1.7V

5.5V

1.7V

5.5V

1.7V

5.5V

1.7V

5.5V

1.7V

5.5V

SOP8

●

SOP-J8

●

SSOP-B8 TSSOP-B8

●

MSOP8

●

TSSOP-B8J

●

VSON008

X2030

●

BR24S128-W

BR24S256-W

○Product

structure：Silicon monolithic integrated circuit

www.rohm.com

TSZ22111½14½001

○This

product is not designed protection against radioactive rays

1/33

TSZ02201-0R2R0G100320-1-2

20.AUG.2012 Rev.001

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