Automotive Serial EEPROMs
125℃ SPI BUS ICs
BR35□□□□ Family
BR35H□□□-WC Series
●Description
BR35H□□□-WC Series is a SPI BUS interface method serial EEPROM.
No.11001ECT09
●Features
1) High speed clock operation up to 5MHz(Max.)
2) 2.5V to 5.5V single power source operation most suitable for battery use.
3) Page write mode useful for initial value at factory shipment.
4) Highly reliable connection by Au pad and Au wire.
5) For SPI bus interface (CPOL,CPHA)=(0,0),(1,1)
6) Auto erase and auto end function at data rewrite.
7) Low operating current
At write operation (5V): 0.6mA(Typ.)
At read operation (5V): 1.3mA(Typ.)
At standby operation (5V): 0.1μA(Typ.)
8) Address auto increment function at read operation.
9) Write mistake prevention function
Write prohibition at power on.
Write prohibition by command code (WRDI)
Write mistake prevention function at low voltage.
10) MSOP8 / TSSOP-B8 / SOP8 / SOP-J8 Package.
11) Data at shipment Memory array:FFh.
12) Data Retention : 20 years(Ta≦125℃)
13) Endurance : 300,000 cycles(Ta≦125℃)
●Page
Write
Number of pages
Product number
32Byte
BR35H160-WC
BR35H320-WC
BR35H640-WC
64Byte
BR35H128-WC
●BR35H□□□
Series
Capacity
16Kbit
32Kbit
64Kbit
128Kbit
Bit Format
2K×8
4K×8
8K×8
16Kx8
Product Name
BR35H160-WC
BR35H320-WC
BR35H640-WC
BR35H128-WC
Supply
Voltage
2.5½5.5V
2.5½5.5V
2.5½5.5V
2.5½5.5V
MSOP8
●
●
-
-
TSSOP-B8
●
●
●
-
SOP8
●
●
●
●
SOP-J8
●
●
●
●
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/16
2011.03 - Rev.C
BR35H□□□-WC Series
●Absolute
Maximum Ratings (Ta=25℃)
Symbol
Limits
Parameter
Impressed Voltage
Vcc
-0.3 to +6.5
560(SOP8)
560(SOP-J8)
Permissible
Pd
Dissipation
410(TSSOP-B8)
380(MSOP8)
Storage
Tstg
-65 to +150
Temperature Range
Operating
Topr
-40 to +125
Temperature Range
Terminal Voltage
-
-0.3 toVcc+0.3
＊When
using at Ta=25℃ or higher, 4.5mW (*1,*2),
3.3mW (*3) , 3.1 mW (*4)to be reduced per 1℃
Technical Note
●Recommended
Operating Conditions
Parameter
Symbol
Limits
Supply Voltage
Vcc
2.5 to 5.5
Input Voltage
Vin
0 to Vcc
*
1
*
2
*
3
*
4
Unit
V
mW
Unit
V
℃
℃
V
●Memory
Cell Characteristics (Vcc=2.5V to 5.5V)
Limits
Parameter
Unit
Condition
Min.
Typ. Max.
1,000,000
-
-
Cycles Ta≦85℃
*5
Endurance
500,000
-
-
Cycles Ta≦105℃
300,000
-
-
Cycles Ta≦125℃
40
-
-
Years Ta≦25℃
Data
25
-
-
Years Ta≦105℃
*5
Retention
20
-
-
Years Ta≦125℃
*5:Not 100% TESTED
●Input
/ Output Capacitance (Ta=25℃, frequency=5MHz)
Parameter
Symbol Conditions Min. Max. Unit
Input
Capacitance
*6
Output
Capacitance
*6
*6:Not 100% TESTED
C
IN
V
IN
=GND
－
8
pF
8
C
OUT
V
OUT
=GND
－
●Electrical
Characteristics (Unless otherwise specified, Ta=-40 to +125℃, Vcc=2.5 to 5.5V)
Limits
Symbol
Unit
Parameter
Min.
Typ.
Max.
“H” Input Voltage
“L” Input Voltage
“L” Output Voltage
“H” Output Voltage
Input Leakage Current
Output Leakage Current
Operating Current
(Write)
ICC2
ICC3
ICC4
ISB
－
－
－
－
－
－
－
－
VIH
VIL
VOL
VOH
ILI
ILO
ICC1
0.7xVcc
-0.3
0
Vcc-0.5
-10
-10
－
－
－
－
－
－
－
－
Vcc+0.3
0.3xVcc
0.4
Vcc
10
10
2.0
3.0
*7
Conditions
V
V
V
V
μA
μA
mA
mA
mA
mA
μA
2.5V≦Vcc≦5.5V
2.5V≦Vcc≦5.5V
IOL=2.1mA
IOH=-0.4mA
VIN=0V to Vcc
VOUT=0V to Vcc, CSB=Vcc
Vcc=2.5V,fSCK=5MHz, tE/W=5ms,
VIH/VIL=0.9Vcc/0.1Vcc, SO=OPEN
Byte Wrte, Page Write
Vcc=5.5V,fSCK=5MHz, tE/W=5ms,
VIH/VIL=0.9Vcc/0.1Vcc, SO=OPEN
Byte Wirte, Page Write
Vcc=2.5V,fSCK=5MHz, VIH/VIL=0.9Vcc/0.1Vcc
SO=OPEN, Read, Read Status Register
Vcc=5.5V,fSCK=5MHz, VIH/VIL=0.9Vcc/0.1Vcc
SO=OPEN, Read, Read Status Register
Vcc=5.5V
CSB=Vcc, SCK=SI=Vcc or GND, SO=OPEN
*7 BR35H160/320-WC *8 BR35H640/128-WC
2.5
*8
*7
5.5
*8
1.5
2.0
10
Operating Current
(Read)
Standby Current
* This product is not designed for protection against radioactive rays.
●Block
Diagram
CSB
SCK
VOLTAGE
INSTRUCTION DECODE
CONTROL CLOCK
GENERATION
WRITE
INHIBITION
HIGH VOLTAGE
GENERATOR
DETECTION
SI
INSTRUCTION
REGISTER
ADDRESS
REGISTER
ADDRESS
DECODER
READ/WRITE
AMP
STATUS REGISTER
11½14bit *9
11½14bit *9
16K½128K
EEPROM
*9 11bit: BR35H160-WC
12bit: BR35H320-WC
13bit: BR35H640-WC
14bit: BR35H128-WC
DATA
SO
REGISTER
8bit
8bit
Fig.1 Block Diagram
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
2/16
2011.03 - Rev.C
BR35H□□□-WC Series
●Pin
Assignment and Description
Vcc
NC
SCK
SI
Technical Note
BR35H160-WC
BR35H320-WC
BR35H640-WC
BR35H128-WC
CSB
SO
NC
GND
Fig.2 Pin Assignment Diagram
●Operating
Timing Characteristics
Terminal Name
Vcc
GND
CSB
SCK
SI
SO
NC
Input/Output
–
–
Input
Input
Input
Output
–
Function
Power Supply to be connected
All input / output reference voltage, 0V
Chip select input
Serial clock input
Start bit, ope code, address, and serial data input
Serial data output
Non connection
●Sync
data input / output timing
(Ta=-40℃ to +125℃, unless otherwise specified, load capacitance C
L1
=100pF)
Parameter
SCK frequency
SCK high time
SCK low time
CSB high time
CSB setup time
CSB hold time
SCK setup time
SCK hold time
SI setup time
SI hold time
Data output delay time1
Data output delay time2
Symbol
fSCK
tSCKWH
tSCKWL
tCS
tCSS
tCSH
tSCKS
tSCKH
tDIS
tDIH
tPD1
tPD2
tOH
tOZ
tRC
tFC
tRO
tFO
tE/W
2.5≦Vcc≦5.5V
Min. Typ. Max.
-
-
5
85
-
-
85
-
-
85
-
-
90
-
-
85
-
-
90
-
-
90
-
-
20
-
-
30
-
-
-
-
70
-
0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
55
-
100
1
1
50
50
5
tCS
tCSS
Unit
MHz
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
μs
μs
ns
ns
ms
CSB
tSCKS
tSCKWL
tSCKWH
tRC
tFC
SCK
tDIS tDIH
SI
SO
High-Z
Fig.3 Input timing
Data through SI enters the IC in sync with the data
rise edge of SCK. Please input address and data
starting from the most significant bit MSB.
tCS
CSB
SCK
SI
SO
tPD
tCSH tSCKH
(C
L2
=30pF)
Output hold time
Output disable time
SCK rise time
SCK fall time
OUTPUT
rise time
OUTPUT
fall time
Write time
＊
tOH
tRO,tFO
tOZ
High-Z
*1
Fig.4 Input / Output timing
Data through SO is output in sync with the data fall
edge of SCK. Data is output starting from the most
significant bit MSB.
1 NOT 100% TESTED
●AC
measurement conditions
Parameter
Load capacitance 1
Load capacitance 2
Input rise time
Input fall time
Input voltage
Input / Output judgment voltage
Symbol
C
L1
C
L2
-
-
-
-
Limits
Min.
Typ.
Max.
-
-
100
-
-
30
-
-
50
-
-
50
0.2Vcc / 0.8Vcc
0.3Vcc / 0.7Vcc
Unit
pF
pF
ns
ns
V
V
●tOZ
measurement condition
IL is the load current that changes the SO voltage to 0.5×Vcc. IL =
±1mA.
After CSB starts to rise, the time needed for SO to change to High-Z is defined with 10% changing point from SO=High or
SO=Low.
0.8Vcc
Signal Input
CSB
SO
Vcc
NC
0.7Vcc
CSB
0.2Vcc
IL=±1mA
CL1=100pF
Signal Input
NC
GND
SCK
SI
Signal Input
SO
High
Low
0.9Vcc
0.1Vcc
0.5Vcc
Fig.5
www.rohm.com
tOZ measurement circuit
Fig.6
tOZ measurement timing
© 2011 ROHM Co., Ltd. All rights reserved.
3/16
2011.03 - Rev.C
BR35H□□□-WC Series
●
Characteristic Data
●Characteristics
Data
6
5
4
3
2
1
0
0
1
2
3
Vcc[V]
4
5
6
Technical Note
(The following characteristic data are Typ. value.)
6
Ta=-40℃
Ta=25℃
Ta=125℃
1
5
4
SPEC
Ta=-40℃
Ta=25℃
Ta=125℃
VOL1[V]
0.8
Ta=-40℃
Ta=25℃
Ta=125℃
VIL[V]
VIH[V]
0.6
3
2
1
0
0
1
2
3
Vcc[V]
4
5
6
SPEC
SPEC
0.4
0.2
0
0
1
2
3
IOL[mA]
4
5
6
Fig.7
"H"
input voltage VIH(CSB,SCK,SI)
3.0
2.5
2.0
VOH1[V]
1.5
1.0
0.5
0.0
-1.2
-1
-0.8
-0.6 -0.4
IOH[mA]
-0.2
0
Ta=-40℃
Ta=25℃
Ta=125℃
Fig.8
"L"
input voltage VIL(CSB,SCK,SI)
12
10
8
ILI[μA]
Ta=-40℃
Ta=25℃
Ta=125℃
SPEC
Fig.9 "L" output voltage VOL1 (Vcc=2.5V)
12
10
8
ILO[μA]
6
4
2
0
Ta=-40℃
Ta=25℃
Ta=125℃
SPEC
SPEC
6
4
2
0
0
1
2
3
Vcc[V]
4
5
6
0
1
2
3
VOUT[V]
4
5
6
Fig.10 "H" output voltage VOH1 (Vcc=2.5V)
4.0
Ta=-40℃
DATA=00h
Ta=25℃
Ta=125℃
SPEC
ICC WRITE [mA]
8.0
Fig.11 Input leak current ILI(CSB,SCK,SI)
2.5
DATA=00h
6.0
Ta=-40℃
Ta=25℃
Ta=125℃
SPEC
ICC READ [mA]
Fig.12 Output leak current ILO(SO)
DATA=00h
2.0
1.5
ICC WRITE [mA]
3.0
Ta=-40℃
Ta=25℃
Ta=125℃
SPEC
2.0
4.0
SPEC
2.0
SPEC
1.0
0.5
0.0
SPEC
1.0
0.0
0
1
2
3
4
5
6
Vcc[V]
Fig.13 Operating Current (WRITE) ICC1,2
( BR35H160/320-WC )
12
10
8
ISB[μA]
6
4
2
0
0
1
2
3
Vcc[V]
4
5
6
Ta=-40℃
Ta=25℃
Ta=125℃
0.0
0
1
2
3
Vcc[V]
4
5
6
0
1
2
3
Vcc[V]
4
5
6
Fig.14 Operating Current (WRITE) ICC1,2
( BR35H640/128-WC )
100
100
Fig.15 Operating Current (READ) ICC3,4
SPEC
SPEC
tSCKWH [ns]
fSCK[MHz]
10
SPEC
1
80
60
40
20
0
0
1
2
3
Vcc[V]
4
5
6
0
1
2
3
Vcc[V]
4
5
6
Ta=-40℃
Ta=25℃
Ta=125℃
Ta=-40℃
Ta=25℃
Ta=125℃
0
Fig.16 Standby Current ISB
100
SPEC
80
tSCKWL [ns]
60
40
20
0
0
1
2
3
Vcc[V]
4
5
6
Ta=-40℃
Ta=25℃
Ta=125℃
Fig.17 SCK frequency fSCK
100
SPEC
100
Fig.18 SCK high time tSCKWH
SPEC
80
80
60
40
20
0
0
1
2
3
Vcc[V]
4
5
6
Ta=-40℃
Ta=25℃
Ta=125℃
tCSS[ns]
tCS[ns]
60
40
20
0
0
Ta=-40℃
Ta=25℃
Ta=125℃
1
2
3
Vcc[V]
4
5
6
Fig.19 SCK low time tSCKWL
Fig.20 CSB high time tCS
Fig.21 CSB setup time tCSS
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
4/16
2011.03 - Rev.C
BR35H□□□-WC Series
●
Characteristic Data
●Characteristics
Data
(The following characteristic data are Typ. value.)
100
SPEC
50
40
Ta=-40℃
Ta=25℃
Ta=125℃
30
20
10
0
SPEC
Ta=-40℃
Ta=25℃
Ta=125℃
tDIH[ns]
50
40
30
20
10
0
0
1
2
3
Vcc[V]
4
5
6
0
1
2
3
Vcc[V]
4
5
Ta=-40℃
Ta=25℃
Ta=125℃
Technical Note
80
tCSH[ns]
tDIS[ns]
SPEC
60
40
20
0
0
1
2
3
Vcc[V]
4
5
6
6
Fig.22 CSB hold time tCSH
100
80
tPD1 [ns]
Fig.23 SI setup time tDIS
100
80
60
40
20
0
Ta=-40℃
Ta=25℃
Ta=125℃
tOZ [ns]
SPEC
120
100
80
60
40
20
0
0
1
2
3
Vcc[V]
4
5
6
0
1
Fig.24 SI hold time tDIH
SPEC
Ta=-40℃
Ta=25℃
Ta=125℃
40
20
0
0
1
2
3
Vcc[V]
4
5
6
tPD2 [ns]
60
Ta=-40℃
Ta=25℃
Ta=125℃
SPEC
2
3
Vcc[V]
4
5
6
Fig.25 Data output delay time
½PD1 (CL=100pF)
100
80
60
Fig.26 Data utput delay time tPD2
100
Fig.27 Output disable time tOZ
8
Ta=-40℃
Ta=25℃
Ta=125℃
SPEC
tFO [ns]
80
60
Ta=-40℃
Ta=25℃
Ta=125℃
SPEC
tE/W[ms]
6
Ta=-40℃
Ta=25℃
Ta=125℃
SPEC
tRO [ns]
4
40
20
0
0
1
2
3
Vcc[V]
4
5
6
40
20
0
0
1
2
3
Vcc[V]
4
5
6
2
0
0
1
2
3
Vcc[V]
4
5
6
Fig.28 Output rise time tRO
Fig.29 Output fall time tFO
Fig.30 Write cycle time tE/W
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
5/16
2011.03 - Rev.C
京公网安备 11010802033920号
EEWORLD
