CHONGQING PINGYANG ELECTRONICS CO.,LTD.
BR805 THRU BR810
SINGLE-PHASE SILICON BRIDGE RECTIFIER
VOLTAGE：50-1000V
CURRENT：8.0A
FEATURES
·Surge
overload ratings-125 Amperes
·Low
forward voltage drop
KBPC-8/10
.296(7.5)
.255(6.5)
.052(1.3) DIA.
.048(1.2) TYP.
.770(19.6)
.730(18.5)
.520(13.2)
.480(12.2)
.750
(19.1)
MIN.
MECHANICAL DATA
·
Case:Metal
or plastic shell with plastic encapsulation
·Epoxy:
UL 94V-0 rate flame retardant
·Lead:
MIL-STD- 202E, Method 208 guaranteed
·Polarity:
Symbols molded or marked on body
·Mounting:
Thru hole for 6# screw
·Weight:
6.9 grams
HOLE FOR
NO. 6 SCREW
.520(13.2) .770(19.6)
.480(12.2) .730(18.5)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRONICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz,resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL
BR805 BR81
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Bridge Input Voltage
Maximum DC Blocking Voltage
Maximum Average Forward rectified Output
Current at T
C
=75°C
Peak Forward Surge Current 8.3ms single half
sine-wave superimposed on rate load (JEDEC
method)
Maximum Forward Voltage Drop per element at
4.0A DC
Maximum DC Reverse Current
@ T
A
=25°C
at Rated DC Blocking Voltage
@ T
A
=100°C
per element
V
RRM
V
RMS
V
DC
I
o
I
FSM
V
F
I
R
50
35
50
100
70
100
BR82
BR84
BR86
BR88
BR810
units
V
V
V
A
A
V
µA
200
140
200
400
280
400
8.0
250
1.1
10
500
600
420
600
800
560
800
1000
700
1000
I
2
t
166
A
2
S
ec
I
2
t Rating for Fusing (t<8.3ms)
C
J
200
pF
Typical Junction Capacitance (Note 1)
Notes: 1.Measured at 1MHz and applied reverse voltage of 4.0 volts
2. Thermal Resistance from Junction to Ambient and fromjunction to lead mounted on P.C.B. with
0.5×0.5”(13×13mm) copper pads.
１
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