BIPOLARICS, INC.
Part Number BRF610
NPN LOW NOISE SILICON MICROWAVE TRANSISTOR
PRODUCT DATA SHEET
FEATURES:
•
High Gain Bandwidth Product
f = 12 GHz typ @ I
C
= 10 mA
t
DESCRIPTION AND APPLICATIONS:
Bipolarics' BRF610is a high performance silicon bipolar
transistor intended for use in low noise application at VHF,
UHF and microwave frequencies. High performance low
noise performance can be realized at 2 mA or less making the
BRF610an excellent choice for battery applications. From 10
mA to greater than 20mA, f
t
is nominally 10 GHz. Maximum
recommended continuous current is 20 mA. A broad range of
packages are offered including SOT-23, SOT-143, plastic and
ceramic 0.085" Micro-X, 0.070" Stripline and unencapsulated
dice.
•
Low Noise Figure
1.6 dB typ at 1 GHz
2.0 dB typ at 2 GHz
•
High Gain
|S
21
|
2
= 18.1 dB @ 1 GHz
12.8 dB @ 2 GHz
Absolute Maximum Ratings:
SYMBOL
PARAMETERS
RATING
UNITS
•
Dice, Plastic, Hermetic and Surface
Mount packages available
V
CBO
V
CEO
V
EBO
I
C CONT
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Junction Temperature
Storage Temperature
9
7
1.5
20
200
-65 to 150
V
V
V
mA
o
C
o
C
PERFORMANCE DATA:
•
Electrical Characteristics (T
A
= 25
o
C)
PARAMETERS & CONDITIONS
V
CE
=8V, I
C
= 10 mA unless stated
SYMBOL
UNIT
MIN.
TYP.
MAX.
f
t
Gain Bandwidth Product
Insertion Power Gain:
f = 1.0 GHz
f = 2.0 GHz
GHz
12
18.1
12.8
|S
21
|
2
P
1d B
G
1d B
NF
h
FE
I
CBO
I
EBO
C
CB
Power output at 1dB compression:
Gain at 1dB compression:
Noise Figure: V
CE
=8V, I
C
= 2mA
Forward Current Transfer Ratio:
V
CE
= 8V, I
C
= 10 mA
Collector Cutoff Current
0.2
Emitter Cutoff Current : V
EB
=1V
Collector Base Capacitance: V
CB
= 8V
: V
CB
=8V
f = 1.0 GHz
f = 1.0 GHz
f = 1.0 GHz
Z
S
= 50Ω
f = 1MHz
dBm
dBm
dB
50
12
15
1.6
100
250
µA
µA
f = 1MHz
pF
0.11
1.0
PAGE
2
BIPOLARICS, INC.
Part Number BRF610
NPN LOW NOISE SILICON MICROWAVE TRANSISTOR
BRF61004
Package Style 04: 0.145" Plastic Macro-X
BRF61086
Package Style 86: 0.085" Plastic Micro-X,
Surface Mount
0.02
.51
1
2
0.032+0.015
2.34+0.38
0.008+0.002
0.203+0.051
4
3
.020+.010
0.51+.25
0.106+0.015
2.67+0.38
0.026+0.001
0.66+0.13
0.085+0.005
2.16+0.13
0.060+0.01
1.52+0.25
BRF61085
PackageStyle 85: 0.085" Plastic Micro-X
BRF61087
Package Style 87: 0.085" Plastic Micro-X,
Short Lead
.020
.51
4
1
3
2
.60+0.10
1.52+.26
.065
2.15
5
.008+.002
.20+.050
.020
.51
.215+.010
5.46+.25
PAGE
4
BIPOLARICS, INC.
Part Number BRF610
NPN LOW NOISE SILICON MICROWAVE TRANSISTOR
BRF61035
Package Style 35: Micro-X 0.085" Ceramic
LEAD
Package Style
14, 85, 35 & 10
1
Base
2
Emitter
3
Collector
4
Emitter
NOTES:
(unless otherwise specified)
in
1. Dimensions are
(mm)
2. Tolerances:
in .xxx =
±
.005
mm .xx =
±
.13
3. All dimensions nominal; subject to change
without notice
BIPOLARICS, INC.
46766 Lakeview Blvd.
Fremont, CA 94538
Phone: (510)226-6565 FAX: (510) 226-6765
京公网安备 11010802033920号
EEWORLD
