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BSC020N03LSG

Description
28 A, 30 V, 0.0029 ohm, N-CHANNEL, Si, POWER, MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size677KB,10 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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BSC020N03LSG Overview

28 A, 30 V, 0.0029 ohm, N-CHANNEL, Si, POWER, MOSFET

BSC020N03LSG Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInfineon
package instructionSMALL OUTLINE, R-PDSO-F8
Contacts8
Reach Compliance Code_compli
ECCN codeEAR99
Other featuresAVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Avalanche Energy Efficiency Rating (Eas)180 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (Abs) (ID)100 A
Maximum drain current (ID)28 A
Maximum drain-source on-resistance0.0029 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-F8
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals8
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)96 W
Maximum pulsed drain current (IDM)400 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
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