DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
MBD127
BZA800A-series
Quadruple ESD transient voltage
suppressor
Product data sheet
Supersedes data of 2000 May 01
2000 Sep 25
NXP Semiconductors
Product data sheet
Quadruple ESD transient voltage
suppressor
FEATURES
•
ESD rating >8 kV, according to IEC1000-4-2
•
SOT353 (SC-88A) surface mount package
•
Common anode configuration.
APPLICATIONS
•
Computers and peripherals
•
Audio and video equipment
•
Communication systems.
DESCRIPTION
Monolithic transient voltage suppressor diode in a five lead
SOT353 (SC-88A) package for 4-bit wide ESD transient
suppression.
MARKING
1
2
3
5
handbook, halfpage
4
BZA800A-series
PINNING
PIN
1
2
3
4
5
cathode 1
common anode
cathode 2
cathode 3
cathode 4
DESCRIPTION
1
3
2
4
5
TYPE NUMBER
BZA856A
BZA862A
BZA868A
BZA820A
MARKING CODE
Z1
Z2
Z3
Z4
MGT580
Fig.1 Simplified outline SOT353 (SC-88A).
2000 Sep 25
2
NXP Semiconductors
Product data sheet
Quadruple ESD transient voltage
suppressor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
Per diode
I
Z
I
F
I
FSM
P
tot
P
ZSM
working current
continuous forward current
total power dissipation
non repetitive peak reverse power
dissipation:
BZA856A, BZA862A, BZA868A,
BZA820A
T
stg
T
j
Note
1. DC working current limited by P
tot(max)
.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
all diodes loaded
storage temperature
junction temperature
T
amb
= 25
°C
T
amb
= 25
°C
T
amb
= 25
°C
square pulse; t
p
= 1 ms; see Fig.3
−
−
−
−
−
−
PARAMETER
CONDITIONS
BZA800A-series
MIN.
MAX.
UNIT
note 1
200
3.75
335
mA
mA
A
mW
non-repetitive peak forward current t
p
= 1 ms; square pulse
24
17
+150
150
W
W
°C
°C
−65
−
VALUE
370
UNIT
K/W
2000 Sep 25
3
NXP Semiconductors
Product data sheet
Quadruple ESD transient voltage
suppressor
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
F
I
R
PARAMETER
forward voltage
reverse current
BZA856A
BZA862A
BZA868A
BZA820A
V
Z
working voltage
BZA856A
BZA862A
BZA868A
BZA820A
r
diff
differential resistance
BZA856A
BZA862A
BZA868A
BZA820A
S
Z
temperature coefficient
BZA856A
BZA862A
BZA868A
BZA820A
C
d
diode capacitance
BZA856A
BZA862A
BZA868A
BZA820A
I
ZSM
non-repetitive peak reverse current
BZA856A
BZA862A
BZA868A
BZA820A
t
p
= 1 ms; T
amb
= 25
°C
−
−
−
−
f = 1 MHz; V
R
= 0
−
−
−
−
I
Z
= 1 mA
−
−
−
−
I
Z
= 1 mA
−
−
−
−
V
R
= 3 V
V
R
= 4 V
V
R
= 4.3 V
V
R
= 15 V
I
Z
= 1 mA
5.32
5.89
6.46
19
−
−
−
−
CONDITIONS
I
F
= 200 mA
−
MIN.
BZA800A-series
TYP.
−
−
−
−
−
5.6
6.2
6.8
20
−
−
−
−
−0.2
1.8
3
16
−
−
−
−
−
−
−
−
MAX.
1.3
2 000
700
200
100
5.88
6.51
7.14
21
400
300
200
125
−
−
−
−
240
200
180
50
3.2
2.9
2.6
0.6
UNIT
V
nA
nA
nA
nA
V
V
V
V
Ω
Ω
Ω
Ω
mV/K
mV/K
mV/K
mV/K
pF
pF
pF
pF
A
A
A
A
2000 Sep 25
4
NXP Semiconductors
Product data sheet
Quadruple ESD transient voltage
suppressor
BZA800A-series
handbook, halfpage
10
MGT583
10
2
handbook, halfpage
PZSM
MGT584
BZA856A
I ZSM
(A)
BZA862A
(W)
BZA856A, BZA862A, BZA868A
BZA820A
BZA868A
1
10
BZA820A
10
−1
10
−2
10
−1
1
t p (ms)
10
1
10
−2
10
−1
1
t p (ms)
10
P
ZSM
= V
ZSM
×
I
ZSM
.
V
ZSM
is the non-repetitive peak reverse voltage at I
ZSM
.
Fig.3
Fig.2
Maximum non-repetitive peak reverse
current as a function of pulse time.
Maximum non-repetitive peak reverse
power dissipation as a function of pulse
duration (square pulse).
MGT585
MGT586
handbook, halfpage
200
Cd
160
handbook, halfpage
400
(pF)
Ptot
(mW)
300
120
BZA856A
80
BZA862A
BZA868A
100
40
BZA820A
0
0
5
10
15
0
0
50
100
Tamb (
°
C)
150
200
VR (V)
T
j
= 25
°C;
f = 1 MHz.
Fig.4
Diode capacitance as a function of reverse
voltage; typical values.
Fig.5 Power derating curve.
2000 Sep 25
5
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