BZD27C3V6P to BZD27C200P
Vishay Semiconductors
Zener Diodes with Surge Current Specification
Features
Sillicon Planar Zener Diodes
Low profile surface-mount package
e3
Zener and surge current specification
Low leakage current
Excellent stability
High temperature soldering:
260 °C/10 sec. at terminals
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
•
•
•
•
•
•
17249
Mechanical Data
Case:
JEDEC DO-219AB (SMF
®
) Plastic case
Weight:
approx. 15 mg
Packaging codes/options:
GS18 / 10 k per 13 " reel, (8 mm tape), 50 k/box
GS08 / 3 k per 7 " reel, (8 mm tape), 30 k/box
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Power dissipation
Test condition
T
L
= 80 °C
T
A
= 25 °C
Non-repetitive peak pulse power 100
µs
square pulse
2)
dissipation
10/1000
µs
waveform (BZD27-
C7V5P to BZD27-C100P)
C110P to BZD27-C200P)
1)
2)
2)
Symbol
P
tot
P
tot
P
ZSM
P
RSM
P
RSM
Value
2.3
0.8
1)
300
150
100
Unit
W
W
W
W
W
10/1000
µs
waveform (BZD27-
2)
Mounted on epoxy-glass PCB with 3 x 3 mm Cu pads (≥ 40
µm
thick)
T
J
= 25 °C prior to surge
Thermal Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Thermal resistance junction to ambient
Thermal resistance junction to lead
Maximum junction temperature
Storage temperature range
1)
Test condition
air
1)
Symbol
R
thJA
R
thJL
T
j
T
S
Value
180
30
150
- 55 to + 150
Unit
K/W
K/W
°C
°C
Mounted on epoxy-glass PCB with 3 x 3 mm Cu pads (≥ 40
µm
thick)
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Forward voltage
Document Number 85810
Rev. 1.8, 13-Apr-05
Test condition
I
F
= 0.2 A
Symbol
V
F
Min
Typ.
Max
1.2
Unit
V
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1
BZD27C3V6P to BZD27C200P
Vishay Semiconductors
Electrical Characteristics
When used as protection diodes (T
J
= 25 °C unless otherwise noted)
Partnumber
Rev.
Breakdown
Voltage
V
(BR)R
at
I
test
V
min
BZD27C7V5P
BZD27C8V2P
BZD27C9V1P
BZD27C10P
BZD27C11P
BZD27C12P
BZD27C13P
BZD27C15P
BZD27C16P
BZD27C18P
BZD27C20P
BZD27C22P
BZD27C24P
BZD27C27P
BZD27C30P
BZD27C33P
BZD27C36P
BZD27C39P
BZD27C43P
BZD27C47P
BZD27C51P
BZD27C56P
BZD27C62P
BZD27C68P
BZD27C75P
BZD27C82P
BZD27C91P
BZD27C100P
BZD27C110P
BZD27C120P
BZD27C130P
BZD27C150P
BZD27C160P
BZD27C180P
BZD27C200P
1)
Test
Current
I
test
mA
Temperature Coefficient
Clamping Voltage
Reverse Current at
Stand-Off Voltage
I
R
µA
max
1500
1200
100
20
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
at V
WM
V
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
82
91
100
110
120
130
150
160
α
Z
@ I
test
%/°C
min
max
0.07
0.08
0.08
0.09
0.1
0.1
0.1
0.1
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.12
0.12
0.12
0.12
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0
0.03
0.03
0.05
0.05
0.05
0.05
0.05
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.07
0.07
0.07
0.07
0.08
0.08
0.08
0.08
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
V
C
V
max
11.3
12.3
13.3
14.8
15.7
17
18.9
20.9
22.9
25.6
28.4
31
33.8
38.1
42.2
46.2
50.1
54.1
60.7
65.5
70.8
78.6
86.5
94.4
103.5
114
126
139
139
152
169
187
205
229
254
at I
RSM1)
A
13.3
12.2
11.3
10.1
9.6
8.8
7.9
7.2
6.6
5.9
5.3
4.8
4.4
3.9
3.6
3.2
3
2.8
2.5
2.3
2.1
1.9
1.7
1.6
1.5
1.3
1.2
1.1
0.72
0.65
0.59
0.53
0.48
0.43
0.39
7
7.7
8.5
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28
31
34
37
40
44
48
52
58
64
70
77
85
94
104
114
124
138
153
168
188
100
100
50
50
50
50
50
50
25
25
25
25
25
25
25
25
10
10
10
10
10
10
10
10
10
10
5
5
5
5
5
5
5
5
5
Non-repetitive peak reverse current in accordance with "IEC 60-1, Section 8" (10/1000
µs
pulse); see Fig. 5.
Document Number 85810
Rev. 1.8, 13-Apr-05
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3
BZD27C3V6P to BZD27C200P
Vishay Semiconductors
Typical Characteristics (Tamb = 25
°C
unless otherwise specified)
P
RSM
–Max. Pulse Power Dissipation ( W )
10.00
160
140
120
100
80
60
40
20
0
0
25
50
75 100 125 150 175 200
V
Znom
– Zener Voltage ( V )
I
F
– Forward Current ( A )
Typ. V
F
Max. V
F
1.00
0.10
0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6
17411
V
F
– Forward Voltage ( V )
17414
Figure 1. Forward Current vs. Forward Voltage
Figure 4. Maximum Pulse Power Dissipation vs. Zener Voltage
C
D
– Typ. Junction Capacitance ( pF )
10000
C5V1P
1000
C6V8P
C12P
C18P
I
RSM
(%)
100
90
t
1
= 10
µs
t
2
= 1000
µ
s
100
C27P
C200P
0.0
0.5
1.0
1.5
2.0
2.5
V
R
– Reverse Voltage (V)
3.0
C51P
50
10
t
1
17415
10
t
t
2
17412
Figure 2. Typ. Diode Capacitance vs. Reverse Voltage
Figure 5. Non-Repetitive Peak Reverse Current Pulse Definition
3.0
P –Power Dissipation ( W )
tot
2.5
2.0
1.5
1.0
0.5
0.0
0
tie point temperature
ambient temperature
25
50
75
100
125
150
17413
T
amb
– Ambient Temperature ( C )
Figure 3. Power Dissipation vs. Ambient Temperature
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Document Number 85810
Rev. 1.8, 13-Apr-05
Embedded System
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