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BZG04-56

Description
300 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC
Categorysemiconductor    Discrete semiconductor   
File Size183KB,7 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet View All

BZG04-56 Overview

300 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC

BZG04-Series
Vishay Semiconductors
Zener Diodes with Surge Current Specification
Features
Glass passivated junction
High reliability
e3
Stand-off Voltage range 8.2 V to 220 V
Excellent clamping cabability
Fast response time (typ.
1 ps from 0 to V
Zmin
)
Lead (Pb)-free component
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
15811
Applications
Protection from high voltage, high energy transients
Mechanical Data
Case:
DO-214AC
Weight:
approx. 77 mg
Packaging Codes/Options:
TR / 1.5 k 7 " reel
TR3 / 6 k 13 " reel 6 k/box
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Power dissipation
Test condition
R
thJA
< 25 K/W, T
amb
= 100 °C
R
thJA
< 100 K/W, T
amb
= 50 °C
Non repetitive peak surge power t
p
= 10/1000
µs
sq.pulse,
dissipation
T
j
= 25 °C prior to surge
Peak forward surge current
Junction temperature
Storage temperature range
10 ms single half sine wave
Symbol
P
diss
P
diss
P
ZSM
I
FSM
T
j
T
stg
Value
3
1.25
300
50
150
- 65 to + 150
Unit
W
W
W
A
°C
°C
Thermal Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Junction lead
Junction ambient
mounted on epoxy-glass hard
tissue, Fig. 1a
mounted on epoxy-glass hard
tissue, Fig. 1b
mounted on Al-oxid-ceramic
(Al
2
O
3
), Fig. 1b
Test condition
Symbol
R
thJL
R
thJA
R
thJA
R
thJA
Value
25
150
125
100
Unit
K/W
K/W
K/W
K/W
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Forward voltage
Document Number 85594
Rev. 2.2, 15-Sep-05
Test condition
I
F
= 0.5 A
Symbol
V
F
Min
Typ.
Max
1.2
Unit
V
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