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BZG05C3V9

Description
3.9 V, 1.25 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AC
CategoryDiscrete semiconductor    diode   
File Size65KB,4 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Parametric Compare View All

BZG05C3V9 Overview

3.9 V, 1.25 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AC

BZG05C3V9 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
MakerVishay
Parts packaging codeDO-214
package instructionR-PDSO-C2
Contacts2
Reach Compliance Codeunknow
ECCN codeEAR99
Diode component materialsSILICON
Diode typeZENER DIODE
JEDEC-95 codeDO-214
JESD-30 codeR-PDSO-C2
Number of terminals2
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Certification statusNot Qualified
surface mountYES
Terminal formC BEND
Terminal locationDUAL
BZG05C...
Vishay Telefunken
Silicon Z–Diodes
Features
D
D
D
D
D
Glass passivated junction
High reliability
Voltage range 3.3V to 100V
Fits onto 5 mm SMD footpads
Wave and reflow solderable
15 811
Applications
Voltage stabilization
Absolute Maximum Ratings
T
j
= 25
_
C
Parameter
Power dissipation
Non repetitive peak surge power
dissipation
Junction temperature
Storage temperature range
Test Conditions
R
thJA
<30K/W, T
amb
=60
°
C
R
thJA
<100K/W, T
amb
=25
°
C
t
p
=100
m
s sq.pulse, T
j
=25
°
C
prior to surge
Type
Symbol
P
V
P
V
P
ZSM
T
j
T
stg
Value
3
1.25
60
150
–65...+150
Unit
W
W
W
°
C
°
C
Maximum Thermal Resistance
T
j
= 25
_
C
Parameter
Test Conditions
Junction lead
Junction ambient mounted on epoxy–glass hard tissue, Fig. 1a
mounted on epoxy–glass hard tissue, Fig. 1b
mounted on Al–oxid–ceramic (Al
2
O
3
), Fig. 1b
Symbol
R
thJL
R
thJA
R
thJA
R
thJA
Value
30
150
125
100
Unit
K/W
K/W
K/W
K/W
Electrical Characteristics
T
j
= 25
_
C
Parameter
Forward voltage
Test Conditions
I
F
=0.2A
Type
Symbol
V
F
Min
Typ
Max
1.2
Unit
V
Document Number 85595
Rev. 6, 01-Apr-99
www.vishay.de
FaxBack +1-408-970-5600
1 (4)

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